CMPT5087 TR PBFREE Equivalent & Substitute Parts

Part Overview

The CMPT5087 TR PBFREE is an active PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for surface mount applications in the SOT-23 package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 50 mA and transition frequency of 40 MHz. The part is RoHS3 compliant and carries unlimited moisture sensitivity level rating. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications requiring PNP transistor functionality within the specified electrical and mechanical parameters.

Substiute Parts

CMPT5087 TR PBFREE
Central Semiconductor CorpIn Stock: 949CMPT5087 TR PBFREE Datasheet
CMPT5087 TR PBFREE
Current Part
NSVMMBT5087LT1G
onsemiIn Stock: 7072NSVMMBT5087LT1G Datasheet
NSVMMBT5087LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 50 mA
Vce Saturation (Max) @ Ib, Ic 300 mV @ 1 mA, 10 mA
Current - Collector Cutoff (Max) 10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100 µA, 5 V
Frequency - Transition 40 MHz
Power - Max 350 mW
Operating Temperature Range −65 to 150 °C
Package / Case SOT-23-3 (TO-236)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the CMPT5087 TR PBFREE are identified based on strict electrical and mechanical parameter matching. The substitution criteria are:

Primary Matching Parameters:

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 50 mA
  • Vce Saturation (Max) @ Ib, Ic: 300 mV @ 1 mA, 10 mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100 µA, 5 V
  • Frequency - Transition: 40 MHz
  • Package / Case: SOT-23-3 (TO-236)
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

The NSVMMBT5087LT1G manufactured by onsemi meets all primary matching parameters and qualifies as a direct substitute. Minor variations in maximum power dissipation (225 mW vs. 350 mW) and operating temperature lower limit (−55°C vs. −65°C) do not disqualify substitution when the application requirements fall within the substitute part's specifications.

Parameter Comparison

Parameter CMPT5087 TR PBFREE (Central Semiconductor) NSVMMBT5087LT1G (onsemi) Match Status
Transistor Type PNP PNP Match
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V Match
Current - Collector (Ic) (Max) 50 mA 50 mA Match
Vce Saturation (Max) @ Ib, Ic 300 mV @ 1 mA, 10 mA 300 mV @ 1 mA, 10 mA Match
Current - Collector Cutoff (Max) 10 nA 50 nA Substitute Higher
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100 µA, 5 V 250 @ 100 µA, 5 V Match
Power - Max 350 mW 225 mW Substitute Lower
Frequency - Transition 40 MHz 40 MHz Match
Operating Temperature Range −65 to 150 °C −55 to 150 °C Substitute Narrower
Package / Case SOT-23-3 (TO-236) SOT-23-3 (TO-236) Match
Mounting Type Surface Mount Surface Mount Match
RoHS Status ROHS3 Compliant ROHS3 Compliant Match
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) Match

Engineering Selection Recommendations

The NSVMMBT5087LT1G is an active, RoHS3-compliant substitute for the CMPT5087 TR PBFREE. Both parts carry identical compliance certifications (RoHS3, REACH Unaffected, EAR99 ECCN classification) and unlimited moisture sensitivity level rating, ensuring regulatory and environmental compatibility.

Selection between these parts depends on application-specific requirements:

Use CMPT5087 TR PBFREE when:

  • Operating temperature range must extend to −65°C
  • Maximum power dissipation approaches or exceeds 225 mW

Use NSVMMBT5087LT1G when:

  • Operating temperature minimum of −55°C is acceptable
  • Maximum power dissipation does not exceed 225 mW
  • Supply chain availability or procurement cost favors onsemi sourcing

Both parts are electrically and mechanically interchangeable for applications operating within the NSVMMBT5087LT1G parameter envelope. The higher collector cutoff current (50 nA vs. 10 nA) of the substitute part has negligible impact on circuit performance in typical switching and amplification applications.

Frequently Asked Questions (FAQ)

Q: Can NSVMMBT5087LT1G replace CMPT5087 TR PBFREE in all applications?

A: The NSVMMBT5087LT1G is a direct substitute provided the application operates within −55°C to 150°C temperature range and power dissipation does not exceed 225 mW. If the application requires operation below −55°C or sustained power dissipation above 225 mW, the CMPT5087 TR PBFREE is required.

Q: Are the package dimensions identical?

A: Both parts use the SOT-23-3 (TO-236) surface mount package with identical mechanical specifications, pin configuration, and PCB footprint. No layout modifications are required for substitution.

Q: What is the difference in collector cutoff current between these parts?

A: The CMPT5087 TR PBFREE specifies maximum ICBO of 10 nA, while the NSVMMBT5087LT1G specifies 50 nA. This difference represents leakage current in the off state and is negligible in most switching and amplification circuits. Applications with extremely low standby current requirements should verify acceptability of the higher leakage specification.

Q: Are both parts RoHS3 compliant?

A: Yes. Both CMPT5087 TR PBFREE and NSVMMBT5087LT1G are RoHS3 compliant with REACH Unaffected status, suitable for applications subject to environmental and regulatory compliance requirements.

Q: What is the moisture sensitivity level for both parts?

A: Both parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions during storage, handling, or assembly processes.

Q: Can these parts be used interchangeably on the same PCB assembly?

A: Yes. Identical SOT-23-3 package specifications, pin assignments, and electrical characteristics within the specified parameter ranges allow direct substitution without PCB redesign or assembly process modification.

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