CMPT5086 TR PBFREE Equivalent & Substitute Parts

Part Overview

The CMPT5086 TR PBFREE is an active PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for surface mount applications in the SOT-23 package. This component operates at 50V collector-emitter breakdown voltage with a maximum collector current of 50mA and is suitable for general-purpose switching and amplification circuits. The part is RoHS3 compliant and carries unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Substiute Parts

CMPT5086 TR PBFREE
Central Semiconductor CorpIn Stock: 1110CMPT5086 TR PBFREE Datasheet
CMPT5086 TR PBFREE
Current Part
NSVMMBT5087LT1G
onsemiIn Stock: 7072NSVMMBT5087LT1G Datasheet
NSVMMBT5087LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 50 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 10 nA
DC Current Gain (hFE) Min @ Ic, Vce 150 @ 100µA, 5V
Power - Max 350 mW
Frequency - Transition 40 MHz
Operating Temperature Range -65 to 150 °C
Package / Case SOT-23-3 (TO-236, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
MSL Rating 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the CMPT5086 TR PBFREE with the NSVMMBT5087LT1G is valid based on the following electrical and mechanical equivalence criteria:

Matching Parameters:

  • Transistor polarity: PNP
  • Maximum collector current: 50mA
  • Collector-emitter breakdown voltage: 50V
  • Vce saturation voltage: 300mV @ 1mA, 10mA
  • Transition frequency: 40MHz
  • Package type: SOT-23-3 (TO-236)
  • Mounting configuration: Surface Mount
  • RoHS3 compliance: Both parts compliant
  • MSL rating: Both rated MSL 1 (Unlimited)

Allowable Parameter Variations: The NSVMMBT5087LT1G exhibits higher DC current gain (250 vs. 150 minimum) and lower maximum collector cutoff current (50nA vs. 10nA), both of which represent improved performance characteristics. The reduced maximum power dissipation (225mW vs. 350mW) and narrower operating temperature range (-55°C to 150°C vs. -65°C to 150°C) are acceptable variations for applications within the specified operating envelope.

Parameter Comparison

Parameter CMPT5086 TR PBFREE NSVMMBT5087LT1G Unit
Manufacturer Central Semiconductor Corp onsemi
Transistor Type PNP PNP
Current - Collector (Ic) Max 50 50 mA
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 10 50 nA
DC Current Gain (hFE) Min @ Ic, Vce 150 @ 100µA, 5V 250 @ 100µA, 5V
Power - Max 350 225 mW
Frequency - Transition 40 40 MHz
Operating Temperature Range -65 to 150 -55 to 150 °C
Package / Case SOT-23-3 SOT-23-3 (TO-236)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Both the CMPT5086 TR PBFREE and NSVMMBT5087LT1G are active products with full RoHS3 compliance and unlimited moisture sensitivity rating, making them suitable for production use. The NSVMMBT5087LT1G from onsemi offers higher inventory availability (6984 pcs vs. 1008 pcs) and improved DC current gain characteristics. Selection between these parts should be based on supply chain requirements and application-specific performance needs within the specified electrical operating parameters. Both parts maintain identical critical electrical specifications for collector current, breakdown voltage, and saturation characteristics, ensuring functional interchangeability in circuit designs.

Frequently Asked Questions (FAQ)

Q: Can the NSVMMBT5087LT1G directly replace the CMPT5086 TR PBFREE in existing designs?

A: Yes. Both parts are PNP transistors with identical maximum collector current (50mA), collector-emitter breakdown voltage (50V), and saturation characteristics (300mV @ 1mA, 10mA). The SOT-23-3 package pinout is identical, enabling direct PCB substitution without circuit modification.

Q: What are the differences in maximum power dissipation between these parts?

A: The CMPT5086 TR PBFREE is rated for 350mW maximum power dissipation, while the NSVMMBT5087LT1G is rated for 225mW. For applications operating below 225mW, both parts are equivalent. Applications requiring power dissipation between 225mW and 350mW must use the CMPT5086 TR PBFREE.

Q: Are there temperature range considerations for substitution?

A: The CMPT5086 TR PBFREE operates from -65°C to 150°C, while the NSVMMBT5087LT1G operates from -55°C to 150°C. For applications requiring operation below -55°C, the CMPT5086 TR PBFREE is required. For standard industrial temperature ranges (-40°C to 85°C), both parts are equivalent.

Q: How do the DC current gain specifications compare?

A: The NSVMMBT5087LT1G has a minimum DC current gain (hFE) of 250 at 100µA and 5V, compared to 150 for the CMPT5086 TR PBFREE. This represents improved gain performance and does not affect substitution compatibility for applications designed around the lower gain specification.

Q: Are both parts compliant with environmental and regulatory standards?

A: Yes. Both the CMPT5086 TR PBFREE and NSVMMBT5087LT1G are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity ratings, meeting current environmental and regulatory requirements for electronic component manufacturing.

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