CMPT3906G TR PBFREE Equivalent & Substitute Parts

Part Overview

The CMPT3906G TR PBFREE is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for small-signal switching and amplification applications. This surface-mount device operates at 40 V collector-emitter breakdown voltage with a maximum collector current of 200 mA and transition frequency of 250 MHz. The part is currently in active production status with 3616 units in stock. Equivalent and substitute parts are identified based on matching electrical characteristics and package compatibility to support design flexibility, inventory optimization, and supply chain continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Max	200	mA
Collector-Emitter Breakdown Voltage (Max)	40	V
Vce Saturation @ Ib, Ic	400 mV @ 5 mA, 50 mA	—
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 10 mA, 1 V	—
Power Dissipation (Max)	350	mW
Transition Frequency	250	MHz
Operating Temperature Range	−65 to +150	°C
Package Type	SOT-23-3 (TO-236-3, SC-59)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the CMPT3906G TR PBFREE are classified into two categories based on electrical parameter matching:

Category 1: Direct Electrical Equivalents (Full Parameter Match)

Parts in this category maintain identical or equivalent electrical specifications across all critical parameters: 40 V collector-emitter breakdown voltage, 200 mA maximum collector current, 250 MHz transition frequency, 100 hFE minimum gain at specified conditions, and SOT-23-3 package compatibility. These parts are interchangeable in applications where the CMPT3906G TR PBFREE is specified.

Category 2: Functional Substitutes (Reduced Performance Envelope)

Parts in this category operate within a reduced electrical envelope, typically featuring lower collector current ratings (100 mA instead of 200 mA) or lower collector-emitter breakdown voltage (30–32 V instead of 40 V). These substitutes are suitable only for applications where the reduced current or voltage ratings are acceptable.

Key Parameters Determining Substitution:

Collector-Emitter Breakdown Voltage: 40 V (primary criterion)
Maximum Collector Current: 200 mA (primary criterion)
DC Current Gain (hFE): 100 minimum @ 10 mA, 1 V
Transition Frequency: 250 MHz
Package: SOT-23-3 surface mount
Vce Saturation: 400 mV @ 5 mA, 50 mA

Parameter Comparison

Part Number	Manufacturer	Ic Max (mA)	Vce(br) (V)	hFE Min @ Ic, Vce	Pmax (mW)	fT (MHz)	Temp Range (°C)	Status	Category
CMPT3906G TR PBFREE	Central Semiconductor	200	40	100 @ 10mA, 1V	350	250	−65 to +150	Active	Reference
MMBT3906-7-F	Diodes Incorporated	200	40	100 @ 10mA, 1V	300	250	−55 to +150	Active	1
MMBT3906 RFG	Taiwan Semiconductor	200	40	100 @ 10mA, 1V	350	250	−55 to +150	Active	1
MMBT3906,215	NXP Semiconductors	200	40	100 @ 10mA, 1V	250	250	−40 to +150	Active	1
MMBT3906-HF	Comchip Technology	200	40	100 @ 10mA, 1V	300	250	−55 to +150	Active	1
MMBT3906L RFG	Taiwan Semiconductor	200	40	100 @ 10mA, 1V	350	250	−55 to +150	Obsolete	1
MMBT3906LT1HTSA1	Infineon Technologies	200	40	100 @ 10mA, 1V	330	250	−40 to +150	Last Time Buy	1
MMBT3906VL	Nexperia USA Inc.	200	40	100 @ 10mA, 1V	—	250	−40 to +150	Active	1
BC858B-7-F	Diodes Incorporated	100	30	220 @ 2mA, 5V	300	200	−65 to +150	Active	2
BCW61BE6327HTSA1	Infineon Technologies	100	32	180 @ 2mA, 5V	330	250	−40 to +150	Obsolete	2
MMBT4403-7-F	Diodes Incorporated	600	40	100 @ 150mA, 2V	300	200	−55 to +150	Active	1*

*MMBT4403-7-F: Higher current rating (600 mA) allows operation in applications requiring greater collector current; electrically compatible at 200 mA operation point.

Engineering Selection Recommendations

For Direct Replacement (Category 1 Parts):

MMBT3906-7-F (Diodes Incorporated) and MMBT3906-HF (Comchip Technology) are recommended as primary substitutes. Both maintain full electrical equivalence with the CMPT3906G TR PBFREE across all critical parameters and are in active production status. MMBT3906-7-F carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components. MMBT3906 RFG (Taiwan Semiconductor) and MMBT3906VL (Nexperia) are active alternatives with identical electrical specifications.

MMBT3906,215 (NXP Semiconductors) is available with AEC-Q101 automotive qualification and active status, though power dissipation is rated at 250 mW versus 350 mW for the reference part.

Parts with obsolete or last-time-buy status (MMBT3906L RFG, MMBT3906LT1HTSA1) should be avoided for new designs unless existing inventory constraints require their use.

For Functional Substitution (Category 2 Parts):

BC858B-7-F and BCW61BE6327HTSA1 operate at reduced electrical ratings (100 mA collector current, 30–32 V breakdown voltage) and are suitable only for applications where these reduced specifications are acceptable. These parts are not recommended as direct replacements for the CMPT3906G TR PBFREE in circuits designed for 200 mA operation.

For Higher Current Applications:

MMBT4403-7-F (Diodes Incorporated) provides 600 mA maximum collector current while maintaining 40 V breakdown voltage and 250 MHz transition frequency. This part is suitable for applications requiring higher current capacity than the reference part.

Compliance Considerations:

All recommended parts are RoHS3 compliant and carry MSL 1 (unlimited) moisture sensitivity rating. Parts with automotive qualification (AEC-Q101, AEC-Q100) are identified in the parameter table and should be selected for automotive applications.

Frequently Asked Questions (FAQ)

Q1: Can MMBT3906-7-F be used as a direct replacement for CMPT3906G TR PBFREE?

Yes. MMBT3906-7-F maintains identical electrical specifications: 40 V collector-emitter breakdown voltage, 200 mA maximum collector current, 250 MHz transition frequency, and 100 hFE minimum gain. Both use SOT-23-3 surface-mount packaging. The primary difference is operating temperature range (−55 to +150°C for MMBT3906-7-F versus −65 to +150°C for CMPT3906G TR PBFREE), which is acceptable for most applications.

Q2: What is the difference between Category 1 and Category 2 substitutes?

Category 1 substitutes maintain the full electrical envelope of the reference part: 40 V breakdown voltage and 200 mA collector current. Category 2 substitutes operate at reduced ratings (100 mA collector current, 30–32 V breakdown voltage) and are suitable only for applications where these reduced specifications are acceptable. Category 2 parts are not direct replacements.

Q3: Why is MMBT3906L RFG listed as obsolete?

MMBT3906L RFG is marked as obsolete by Taiwan Semiconductor Corporation. While electrically equivalent to the reference part, new designs should not incorporate this part number. Existing inventory may be used for legacy product support only.

Q4: Can BC858B-7-F replace CMPT3906G TR PBFREE in all applications?

No. BC858B-7-F is rated for 100 mA maximum collector current and 30 V breakdown voltage, compared to 200 mA and 40 V for the reference part. This part is suitable only for applications where the reduced current and voltage ratings are acceptable. It is not a direct replacement.

Q5: What is the significance of AEC-Q101 qualification?

AEC-Q101 is an automotive industry qualification standard. Parts carrying this qualification (MMBT3906-7-F, MMBT3906,215) have undergone additional reliability testing and are approved for automotive applications. Select these parts for automotive designs requiring qualified components.

Q6: Are all substitute parts RoHS3 compliant?

Yes. All parts listed in this document are RoHS3 compliant and lead-free. All carry MSL 1 (unlimited) moisture sensitivity rating, indicating no special storage or handling requirements.

Q7: What is the difference between MMBT3906 RFG and MMBT3906L RFG?

Both parts are electrically equivalent with 40 V breakdown voltage and 200 mA collector current. MMBT3906 RFG is in active production status, while MMBT3906L RFG is obsolete. MMBT3906 RFG should be selected for new designs.

Q8: Can MMBT4403-7-F be used in place of CMPT3906G TR PBFREE?

Yes, with design consideration. MMBT4403-7-F is rated for 600 mA maximum collector current (versus 200 mA for the reference part) and maintains 40 V breakdown voltage and 250 MHz transition frequency. It is electrically compatible at the 200 mA operation point and suitable for applications requiring higher current capacity. Transition frequency is 200 MHz (versus 250 MHz for the reference part).

Q9: What packaging options are available for substitutes?

All substitute parts use SOT-23-3 surface-mount packaging (also designated TO-236-3 or SC-59). Packaging is consistent across all listed parts and compatible with existing PCB layouts designed for the CMPT3906G TR PBFREE.

Q10: Which substitute part has the highest inventory availability?

MMBT3906-7-F (Diodes Incorporated) has 146,126 units in stock, the highest availability among all listed substitutes. MMBT3906 RFG (Taiwan Semiconductor) has 106,418 units in stock as a secondary option.

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