CMPDM303NH BK N-Channel MOSFET 30V 3.6A Equivalent & Substitute Parts

Part Overview

The CMPDM303NH BK is an N-Channel MOSFET manufactured by Central Semiconductor Corp, designed for surface mount applications in the SOT-23F package. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 3.6A at 25°C and a maximum power dissipation of 350mW. The CMPDM303NH BK is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substiute Parts

CMPDM303NH BK

Central Semiconductor CorpIn Stock: 917CMPDM303NH BK Datasheet

Current PartRFQ

SSM3K324R,LF

Toshiba Semiconductor and StorageIn Stock: 21490SSM3K324R,LF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the CMPDM303NH BK is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• FET Type: N-Channel MOSFET (Metal Oxide technology)
• Drain to Source Voltage (Vdss): 30V minimum
• Continuous Drain Current (Id): Equal to or greater than 3.6A at 25°C
• On-State Resistance (Rds On): Comparable performance at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
• Power Dissipation: Sufficient thermal capability for application requirements

Mechanical Equivalence Criteria:

• Package: SOT-23-3 Flat Leads (SOT-23F)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: MSL 1 or better

Compliance Criteria:

• ECCN classification: EAR99
• HTSUS code alignment: 8541.21.0095 or 8541.29.0095

The substitute part SSM3K324R,LF meets all electrical and mechanical equivalence requirements and is recommended as a direct replacement for the obsolete CMPDM303NH BK.

Parameter Comparison

Engineering Selection Recommendations

The SSM3K324R,LF manufactured by Toshiba Semiconductor and Storage is the qualified substitute for the obsolete CMPDM303NH BK based on the following engineering criteria:

Electrical Performance: The SSM3K324R,LF meets or exceeds all critical electrical parameters. The continuous drain current rating of 4A exceeds the 3.6A requirement of the main part. Power dissipation capability of 1W provides additional thermal margin compared to the 350mW rating of the CMPDM303NH BK. On-state resistance performance is comparable at the specified gate voltage of 4.5V.

Package and Mechanical Compatibility: Both devices utilize the SOT-23-3 Flat Leads package with surface mount configuration, ensuring direct physical compatibility in existing PCB layouts without redesign.

Compliance and Availability: The SSM3K324R,LF holds active product status with 21,400 units in stock, ensuring long-term supply continuity. The substitute meets ROHS3 compliance and REACH requirements, supporting modern regulatory standards. Both parts share the same ECCN classification (EAR99) and compatible HTSUS codes.

Moisture Sensitivity: Both devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

The SSM3K324R,LF is suitable for direct substitution in applications where the CMPDM303NH BK was originally specified.

Frequently Asked Questions (FAQ)

Q: Can the SSM3K324R,LF be used as a direct replacement for the CMPDM303NH BK without PCB modifications?

A: Yes. Both devices are packaged in SOT-23-3 Flat Leads with identical pin configurations and surface mount requirements. No PCB layout changes are necessary for physical substitution.

Q: What are the key electrical differences between these two MOSFETs?

A: The SSM3K324R,LF provides higher continuous drain current (4A versus 3.6A) and greater power dissipation capability (1W versus 350mW). Input capacitance is lower in the substitute (190 pF versus 590 pF). On-state resistance is comparable at 4.5V gate voltage. These differences favor the substitute for thermal performance and switching speed applications.

Q: Why is the CMPDM303NH BK classified as obsolete?

A: The CMPDM303NH BK is no longer in active production by Central Semiconductor Corp. The SSM3K324R,LF from Toshiba provides equivalent functionality with active product status and established supply chain availability.

Q: Are there any compliance or regulatory differences between the two parts?

A: The SSM3K324R,LF is certified ROHS3 Compliant and REACH Unaffected. The CMPDM303NH BK compliance status is not specified in available documentation. Both parts share the same ECCN classification (EAR99), indicating equivalent export control treatment.

Q: What is the moisture sensitivity level for both devices?

A: Both the CMPDM303NH BK and SSM3K324R,LF are rated MSL 1 (Unlimited), meaning they have no moisture sensitivity restrictions and do not require special dry-pack storage or handling procedures.

Q: How do the gate charge and input capacitance specifications affect circuit design?

A: The SSM3K324R,LF has lower input capacitance (190 pF at 30V versus 590 pF at 10V for the main part), which may result in faster switching transitions and reduced gate drive power requirements. Gate charge data for the substitute is not provided; consult the SSM3K324R,LF datasheet for detailed switching characteristics if gate drive timing is critical to the application.

Q: Is the SSM3K324R,LF available in the same packaging options as the CMPDM303NH BK?

A: The SSM3K324R,LF is supplied in Cut Tape (CT) and Digi-Reel® packaging formats. Both devices use the SOT-23F supplier device package designation. Verify packaging format requirements for your procurement and assembly processes.

Q: What is the operating temperature range for each device?

A: The CMPDM303NH BK operates from -55°C to 150°C (TJ). The SSM3K324R,LF specification indicates 150°C (TJ) as the maximum junction temperature. For applications requiring the full -55°C lower temperature range, verify the substitute's minimum operating temperature in the detailed datasheet.