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CJD45H11 TR13 Equivalent & Substitute Parts
Part Overview
The CJD45H11 TR13 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 80 V collector-emitter breakdown voltage and 8 A maximum collector current. The device is packaged in TO-252-3 DPAK (2 Leads + Tab) surface mount configuration with 1.75 W power dissipation capability and 50 MHz transition frequency. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The CJD45H11 TR13 remains ROHS3 compliant and is suitable for applications requiring PNP switching and amplification in power management circuits.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Current - Collector (Ic) (Max) | 8 | A |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 400 mA, 8 A | — |
| Current - Collector Cutoff (Max) | 10 | µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4 A, 1 V | — |
| Power - Max | 1.75 | W |
| Frequency - Transition | 50 | MHz |
| Operating Temperature Range | -65 to 150 | °C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the CJD45H11 TR13 is determined by strict electrical and mechanical parameter matching within the PNP bipolar transistor category. The following parameters establish substitution eligibility:
Critical Matching Parameters:
- Transistor Type: PNP (mandatory)
- Voltage - Collector Emitter Breakdown (Max): 80 V (mandatory)
- Current - Collector (Ic) (Max): 8 A (mandatory)
- Vce Saturation (Max) @ Ib, Ic: 1 V @ 400 mA, 8 A (mandatory)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4 A, 1 V (mandatory)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 (mandatory)
- Mounting Type: Surface Mount (mandatory)
- RoHS Status: ROHS3 Compliant (mandatory)
Allowable Variation Parameters:
- Frequency - Transition: May exceed 50 MHz (higher frequency acceptable)
- Power - Max: May exceed 1.75 W (higher power rating acceptable)
- Current - Collector Cutoff (Max): May be lower than 10 µA (lower leakage acceptable)
- Operating Temperature Range: May be narrower than -65 to 150°C (within specified range acceptable)
- Product Status: Active or Obsolete (both acceptable for substitution)
All substitute parts listed meet or exceed the critical electrical specifications of the CJD45H11 TR13 while maintaining identical package and mounting requirements.
Parameter Comparison
| Parameter | CJD45H11 TR13 | MJD45H11RLG | MJD45H11T4 | MJD45H11T4G | NJVMJD45H11D3T4G | NJVMJD45H11G |
|---|---|---|---|---|---|---|
| Manufacturer | Central Semiconductor Corp | onsemi | STMicroelectronics | onsemi | onsemi | onsemi |
| Transistor Type | PNP | PNP | PNP | PNP | PNP | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Current - Collector (Ic) (Max) | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A | 1 V @ 400 mA, 8 A |
| Current - Collector Cutoff (Max) | 10 µA | 1 µA | 10 µA | 1 µA | 1 µA | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V | 40 @ 4 A, 1 V |
| Power - Max | 1.75 W | 1.75 W | 20 W | 1.75 W | 20 W | 1.75 W |
| Frequency - Transition | 50 MHz | 90 MHz | — | 90 MHz | 90 MHz | 90 MHz |
| Operating Temperature Range | -65 to 150°C (TJ) | -55 to 150°C (TJ) | 150°C (TJ) | -55 to 150°C (TJ) | -55 to 150°C (TJ) | -55 to 150°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Product Status | Obsolete | Active | Active | Active | Obsolete | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Grade | — | — | — | — | — | Automotive |
| Qualification | — | — | — | — | — | AEC-Q101 |
Engineering Selection Recommendations
Primary Recommendation: MJD45H11T4G (onsemi)
MJD45H11T4G is the preferred substitute for CJD45H11 TR13. This part is currently in active production status, ensuring long-term availability and supply chain stability. It matches all critical electrical parameters and maintains identical DPAK packaging. The device features 90 MHz transition frequency, exceeding the original 50 MHz specification, and includes lower collector cutoff current (1 µA versus 10 µA), providing improved leakage characteristics. Operating temperature range of -55 to 150°C covers the majority of industrial applications. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) align with the original part specifications.
Secondary Recommendation: MJD45H11RLG (onsemi)
MJD45H11RLG serves as an alternative active substitute with identical electrical specifications to MJD45H11T4G. This part is supplied in Cut Tape (CT) & Digi-Reel® packaging, offering flexibility for high-volume production environments. The 90 MHz transition frequency and 1 µA collector cutoff current provide performance enhancement over the original CJD45H11 TR13. Inventory availability of 23,300 units supports immediate procurement requirements.
Tertiary Recommendation: NJVMJD45H11G (onsemi)
NJVMJD45H11G is an active substitute qualified to AEC-Q101 automotive standards, suitable for applications requiring automotive-grade components. This part maintains all critical electrical specifications and includes enhanced temperature stability across the -55 to 150°C operating range. Tube packaging and automotive qualification make this option appropriate for automotive and harsh-environment applications. Current inventory of 2,229 units supports moderate-volume requirements.
Alternative for Enhanced Power Dissipation: MJD45H11T4 (STMicroelectronics)
MJD45H11T4 provides 20 W maximum power dissipation, compared to 1.75 W in the original CJD45H11 TR13. This substitute is suitable for applications requiring higher thermal performance. All critical electrical parameters match the original specification. This part is currently in active production with 65,300 units in inventory.
Obsolete Alternative: NJVMJD45H11D3T4G (onsemi)
NJVMJD45H11D3T4G is classified as obsolete and should be avoided for new designs. While it meets all electrical specifications and offers 20 W power dissipation with 90 MHz transition frequency, its obsolete status limits long-term availability. This part is suitable only for legacy system maintenance where existing inventory exists.
Frequently Asked Questions (FAQ)
Q1: Can MJD45H11T4G directly replace CJD45H11 TR13 without circuit modifications?
A: Yes. MJD45H11T4G meets all critical electrical parameters: 80 V breakdown voltage, 8 A collector current, 1 V saturation voltage at specified conditions, and 40 minimum DC current gain. Identical DPAK packaging and surface mount configuration ensure mechanical compatibility. No circuit modifications are required.
Q2: What is the difference between MJD45H11RLG and MJD45H11T4G?
A: Both parts are manufactured by onsemi and share identical electrical specifications. The primary difference is packaging format: MJD45H11RLG is supplied in Cut Tape (CT) & Digi-Reel® configuration for high-volume automated assembly, while MJD45H11T4G is supplied in standard cut tape format. Electrical performance and DPAK package are identical.
Q3: Why does MJD45H11T4 specify 20 W power dissipation instead of 1.75 W?
A: MJD45H11T4 is manufactured by STMicroelectronics and incorporates enhanced thermal design within the same DPAK package. The 20 W rating indicates improved heat dissipation capability. This higher power rating does not affect electrical compatibility; it provides additional thermal margin for power-intensive applications. The part remains a direct electrical substitute.
Q4: Is NJVMJD45H11G suitable for automotive applications?
A: Yes. NJVMJD45H11G carries AEC-Q101 automotive qualification and is designated as automotive-grade. This qualification ensures the part meets automotive reliability and environmental stress testing requirements. Use this part for automotive and harsh-environment applications where AEC-Q101 compliance is specified.
Q5: What does the lower collector cutoff current (1 µA) in substitute parts mean for circuit performance?
A: Lower collector cutoff current indicates reduced leakage in the off-state. Substitute parts with 1 µA cutoff current (MJD45H11RLG, MJD45H11T4G, NJVMJD45H11D3T4G, NJVMJD45H11G) provide improved leakage characteristics compared to the original 10 µA specification. This enhancement reduces standby power consumption and improves circuit efficiency without affecting switching performance.
Q6: Can I use MJD45H11T4 (20 W) in place of CJD45H11 TR13 (1.75 W)?
A: Yes. MJD45H11T4 is electrically compatible and meets all critical specifications. The higher power rating (20 W) provides additional thermal capability and does not create compatibility issues. This substitution is appropriate for applications where enhanced thermal performance is beneficial or required.
Q7: Should I avoid NJVMJD45H11D3T4G due to its obsolete status?
A: Yes. For new designs and production, use active-status alternatives such as MJD45H11T4G, MJD45H11RLG, or NJVMJD45H11G. NJVMJD45H11D3T4G should be used only for legacy system maintenance where existing inventory is available. Active-status parts ensure long-term supply chain continuity.
Q8: Are all substitute parts ROHS3 compliant?
A: Yes. All listed substitute parts (MJD45H11RLG, MJD45H11T4, MJD45H11T4G, NJVMJD45H11D3T4G, NJVMJD45H11G) are ROHS3 compliant, matching the original CJD45H11 TR13 compliance status. All parts carry unlimited moisture sensitivity level (MSL 1).
Q9: What is the significance of 90 MHz transition frequency in substitute parts versus 50 MHz in the original?
A: The 90 MHz transition frequency in substitute parts indicates higher switching speed capability. This enhancement does not affect compatibility with circuits designed for 50 MHz operation. The higher frequency specification provides performance margin and is suitable for applications requiring faster switching characteristics.
Q10: Which substitute part offers the best long-term availability?
A: MJD45H11T4G (onsemi) is recommended for long-term availability. This part is in active production status with 75,200 units in current inventory. onsemi maintains broad distribution networks and consistent manufacturing capacity for the MJD45 series, ensuring reliable long-term supply.
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