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CEFB202-G Equivalent & Substitute Parts Reference
Part Overview
The CEFB202-G is a general-purpose rectifier diode manufactured by Comchip Technology, rated for 100V DC reverse voltage and 2A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating variations in recovery characteristics and forward voltage performance.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 2 | A |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 2 A | mV |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Reverse Recovery Time (trr) | 25 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Package / Case | DO-214AA, SMB | — |
| Operating Temperature - Junction (Max) | 150 | °C |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution eligibility for the CEFB202-G is determined by the following critical parameters:
Primary Compatibility Criteria:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100V
- Current - Average Rectified (Io): Must equal or exceed 2A
- Package / Case: Must be DO-214AA or SMB equivalent
- Mounting Type: Must be Surface Mount
Secondary Compatibility Considerations:
- Voltage - Forward (Vf) (Max) @ If: Acceptable range 875 mV to 940 mV @ 2A
- Speed Classification: Fast Recovery ≤ 500ns preferred for equivalent performance
- Reverse Recovery Time (trr): 25 ns to 35 ns acceptable
- Current - Reverse Leakage @ Vr: 2 µA to 5 µA @ 100V acceptable
- Operating Temperature - Junction: Minimum 150°C required
Substitute Parts Identified:
Tier 1 - Full Electrical & Thermal Equivalents (2A Rating):
- ES2B-13-F (Diodes Incorporated)
- MURS210T3G (onsemi)
- S2B (Diotec Semiconductor)
Tier 2 - Voltage & Package Compatible, Current Derated (1A Rating):
- MURS110T3G (onsemi)
Tier 3 - Voltage & Package Compatible, Forward Voltage Variant:
- ES2B (YAGEO)
Parameter Comparison
| Parameter | CEFB202-G | ES2B-13-F | MURS210T3G | S2B | MURS110T3G | ES2B |
|---|---|---|---|---|---|---|
| Manufacturer | Comchip Technology | Diodes Incorporated | onsemi | Diotec Semiconductor | onsemi | YAGEO |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 2 A | 2 A | 2 A | 2 A | 1 A | Not specified |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 2 A | 920 mV @ 2 A | 940 mV @ 2 A | 1.15 V @ 2 A | 875 mV @ 1 A | 950 mV |
| Speed Classification | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Standard Recovery >500ns | Fast Recovery ≤ 500ns | Not specified |
| Reverse Recovery Time (trr) | 25 ns | 25 ns | 30 ns | 1.5 µs | 35 ns | Not specified |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | 2 µA @ 100 V | 5 µA @ 100 V | 2 µA @ 100 V | Not specified |
| Package / Case | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB | DO-214AA |
| Operating Temperature - Junction (Max) | 150°C | 150°C | 175°C | 150°C | 175°C | Not specified |
| Product Status | Obsolete | Active | Last Time Buy | Active | Active | Active |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | Not applicable | ROHS3 Compliant | Not specified |
Engineering Selection Recommendations
For Direct Replacement (Obsolete Part Mitigation):
ES2B-13-F (Diodes Incorporated) is the primary recommended substitute. This part maintains identical electrical specifications to the CEFB202-G across all critical parameters: 100V reverse voltage, 2A average rectified current, 25ns reverse recovery time, and 150°C maximum junction temperature. The part is in active production status with ROHS3 compliance certification, ensuring long-term availability and regulatory alignment. Packaging is DO-214AA (SMB) surface mount, directly compatible with existing PCB layouts.
For Applications Requiring Extended Temperature Range:
MURS210T3G (onsemi) provides equivalent 2A current capacity and 100V voltage rating with extended maximum junction temperature of 175°C. Reverse recovery time is 30ns (5ns longer than CEFB202-G), and forward voltage is 940mV @ 2A (65mV higher). This part is classified as Last Time Buy, indicating limited future availability. ROHS3 compliance is confirmed.
For Cost-Optimized Substitution:
S2B (Diotec Semiconductor) meets voltage and current requirements but exhibits standard recovery characteristics (>500ns) versus the fast recovery specification of CEFB202-G. Forward voltage is elevated at 1.15V @ 2A. This part is suitable only for applications where switching speed is not performance-critical. RoHS status is not applicable.
For Current-Derated Applications:
MURS110T3G (onsemi) is a 1A-rated alternative suitable only where circuit design permits current reduction from 2A to 1A. This part offers extended temperature range (-65°C to 175°C) and improved reverse leakage characteristics (2µA vs. 5µA). Fast recovery performance is maintained at ≤500ns with 35ns reverse recovery time.
Not Recommended for Direct Substitution:
ES2B (YAGEO) lacks complete electrical specification data in the provided parameters, preventing full compatibility verification. Current rating is not specified, creating uncertainty for 2A applications.
Frequently Asked Questions (FAQ)
Q: Can ES2B-13-F be used as a direct drop-in replacement for CEFB202-G?
A: Yes. ES2B-13-F maintains identical voltage (100V), current (2A), reverse recovery time (25ns), and maximum junction temperature (150°C) specifications. The DO-214AA (SMB) package is mechanically and electrically compatible. Forward voltage is 920mV @ 2A versus 875mV, a 45mV increase within acceptable operating margins for most rectifier applications.
Q: What is the difference between MURS210T3G and ES2B-13-F?
A: Both parts are 100V, 2A fast recovery diodes in DO-214AA packages. MURS210T3G offers extended temperature range (175°C vs. 150°C maximum junction temperature) and lower reverse leakage (2µA vs. 5µA @ 100V). Forward voltage is 940mV @ 2A (20mV higher than ES2B-13-F). MURS210T3G is classified as Last Time Buy, indicating limited future production.
Q: Why is MURS110T3G listed as a substitute if it is only rated for 1A?
A: MURS110T3G is included as a Tier 2 substitute for applications where circuit design permits current reduction from 2A to 1A. It maintains 100V voltage rating, fast recovery performance, and offers superior temperature range (-65°C to 175°C) and lower reverse leakage (2µA). This part is suitable for redesigned circuits or lower-current branches within a larger assembly.
Q: Is S2B acceptable for high-frequency switching applications?
A: No. S2B is classified as standard recovery (>500ns) with 1.5µs reverse recovery time, compared to CEFB202-G fast recovery (≤500ns, 25ns trr). S2B is suitable only for low-frequency rectification where switching speed is not performance-critical. Forward voltage is also elevated at 1.15V @ 2A.
Q: What is the significance of "Last Time Buy" status for MURS210T3G?
A: Last Time Buy indicates the manufacturer has announced end-of-life production. Existing inventory may be available, but future procurement will not be possible. For long-term production requirements, ES2B-13-F (Active status) is the preferred substitute to ensure supply chain continuity.
Q: Are all substitute parts ROHS3 compliant?
A: ES2B-13-F, MURS210T3G, and MURS110T3G are confirmed ROHS3 compliant. S2B has "Not applicable" RoHS status. ES2B RoHS status is not specified in the provided data. Verify RoHS compliance requirements with your regulatory or procurement department before final part selection.
Q: Can the CEFB202-G be replaced with ES2B without PCB modification?
A: Yes. Both parts use DO-214AA (SMB) surface mount packaging with identical footprint and pin configuration. No PCB layout changes are required. Electrical performance is compatible across all critical parameters.
Q: What is the impact of forward voltage differences between substitute parts?
A: Forward voltage variations (875mV to 1.15V @ 2A) affect power dissipation and voltage drop across the diode. Higher forward voltage increases heat generation and reduces available voltage for downstream circuit stages. For precision rectification or low-voltage applications, ES2B-13-F (920mV) or CEFB202-G (875mV) are preferred over S2B (1.15V).
Q: Is reverse recovery time critical for my application?
A: Reverse recovery time (trr) is critical in high-frequency switching, power factor correction, and resonant converter applications. CEFB202-G and ES2B-13-F both specify 25ns trr, providing optimal performance. S2B at 1.5µs is unsuitable for frequencies above 100kHz. MURS210T3G (30ns) and MURS110T3G (35ns) are acceptable for most industrial rectification up to 500kHz.
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