CEFB103-G Equivalent & Substitute Parts Reference

Part Overview

The CEFB103-G is a general-purpose rectifier diode manufactured by Comchip Technology, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as obsolete, indicating discontinued production and limited availability. Identifying equivalent substitute parts is necessary to maintain design continuity and ensure procurement of functionally compatible alternatives from active manufacturers.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Package / Case	DO-214AA, SMB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction (Max)	150	°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the CEFB103-G are classified based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Critical Parameters (Must Match):

Voltage - DC Reverse (Vr) (Max): 200 V
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1 A minimum

Secondary Parameters (Allowable Variation):

Voltage - Forward (Vf) (Max) @ If: 875 mV ± tolerance
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns nominal
Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V
Operating Temperature - Junction: ≥ 150°C

Substitute parts meeting all critical parameters and maintaining secondary parameter specifications within acceptable engineering tolerances are listed below. Parts with higher current ratings (1.5 A, 2 A) are included as they provide functional equivalence with enhanced current capacity. Parts with different speed classifications or significantly higher forward voltage are noted for application-specific evaluation.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Tj (Max) [°C]	Product Status	RoHS Status
CEFB103-G	Comchip Technology	200	1	875 @ 1 A	Fast Recovery ≤ 500ns	25	5 @ 200 V	150	Obsolete	REACH Unaffected
MURS120-13-F	Diodes Incorporated	200	1	875 @ 1 A	Fast Recovery ≤ 500ns	25	2 @ 200 V	175	Active	ROHS3 Compliant
MURS120	Diodes Incorporated	200	1	875 @ 1 A	Fast Recovery ≤ 500ns	25	2 @ 200 V	150	Active	ROHS3 Compliant
ER1D-LTP	Micro Commercial Co	200	1	950 @ 1 A	Fast Recovery ≤ 500ns	35	5 @ 200 V	175	Active	ROHS3 Compliant
MUR120S	Taiwan Semiconductor Corporation	200	1	875 @ 1 A	Fast Recovery ≤ 500ns	25	50 @ 200 V	175	Active	ROHS3 Compliant
RS1DB-13-F	Diodes Incorporated	200	1	1300 @ 1 A	Fast Recovery ≤ 500ns	150	5 @ 200 V	150	Active	ROHS3 Compliant
S1DB-13-F	Diodes Incorporated	200	1	1100 @ 1 A	Standard Recovery >500ns	3000	5 @ 200 V	150	Active	ROHS3 Compliant
STTH1R02U	STMicroelectronics	200	1.5	1000 @ 1.5 A	Fast Recovery ≤ 500ns	30	3 @ 200 V	175	Active	ROHS3 Compliant
STTH2R02U	STMicroelectronics	200	2	1000 @ 2 A	Fast Recovery ≤ 500ns	30	3 @ 200 V	175	Active	ROHS3 Compliant
STTH2R02UY	STMicroelectronics	200	2	1000 @ 2 A	Fast Recovery ≤ 500ns	30	3 @ 200 V	175	Active	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Direct Electrical & Thermal Equivalents:

MURS120 and MURS120-13-F (Diodes Incorporated) provide the closest electrical match to CEFB103-G with identical forward voltage (875 mV @ 1 A), reverse recovery time (25 ns), and fast recovery speed classification. Both are active products with ROHS3 compliance. MURS120-13-F extends maximum junction temperature to 175°C compared to the original 150°C specification.

Tier 2 - Functionally Compatible with Minor Parameter Variation:

ER1D-LTP (Micro Commercial Co) maintains 200 V / 1 A ratings with fast recovery characteristics but exhibits slightly elevated forward voltage (950 mV @ 1 A) and reverse recovery time (35 ns). This part is suitable for applications where these minor increases do not impact circuit performance.

MUR120S (Taiwan Semiconductor Corporation) matches electrical specifications but shows elevated reverse leakage current (50 µA @ 200 V versus 5 µA specification). This part is suitable for applications with higher leakage tolerance.

Tier 3 - Higher Current Capacity Alternatives:

STTH1R02U (STMicroelectronics) provides 1.5 A capacity in the same package with fast recovery characteristics and lower reverse leakage (3 µA @ 200 V). This part is suitable for designs requiring current margin or future uprating.

STTH2R02U and STTH2R02UY (STMicroelectronics) provide 2 A capacity with identical fast recovery speed and package compatibility. STTH2R02UY includes automotive-grade qualification (Series Q).

Tier 4 - Alternative Speed Classifications:

RS1DB-13-F (Diodes Incorporated) maintains 200 V / 1 A ratings but exhibits significantly higher reverse recovery time (150 ns) and forward voltage (1.3 V @ 1 A). This part is suitable only for applications where fast recovery is not a critical requirement.

S1DB-13-F (Diodes Incorporated) features standard recovery characteristics (3 µs reverse recovery time) and elevated forward voltage (1.1 V @ 1 A). This part is suitable for low-frequency rectification applications where switching speed is not critical.

Compliance & Availability:

All recommended substitute parts are active products with ROHS3 compliance and REACH unaffected status. Inventory availability ranges from 1,480 to 60,300 units across manufacturers, ensuring procurement continuity.

Frequently Asked Questions (FAQ)

Q: Can MURS120-13-F directly replace CEFB103-G in existing designs?

A: Yes. MURS120-13-F meets all critical electrical parameters (200 V, 1 A, fast recovery ≤ 500ns, 25 ns trr) and package specifications (DO-214AA SMB). The extended maximum junction temperature (175°C versus 150°C) provides additional thermal margin. No circuit modifications are required.

Q: What is the difference between MURS120 and MURS120-13-F?

A: Both parts are electrically identical with 200 V / 1 A ratings, 875 mV forward voltage, and 25 ns reverse recovery time. MURS120-13-F is supplied in Tape & Reel (TR) packaging, while MURS120 is supplied in Cut Tape (CT) & Digi-Reel® packaging. Selection depends on assembly process requirements.

Q: Why do some substitute parts have higher current ratings (1.5 A, 2 A)?

A: Higher current-rated parts (STTH1R02U, STTH2R02U, STTH2R02UY) are functionally compatible because they maintain the same 200 V reverse voltage rating and package form factor. The increased current capacity provides design margin and allows for future circuit uprating without package change. These parts are suitable for direct substitution in applications operating at or below 1 A.

Q: Are there any substitutes with different package types?

A: No. All substitute parts listed maintain the DO-214AA (SMB) surface mount package specification. Package compatibility is a critical substitution criterion for this product category.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates the diode exhibits fast recovery characteristics with reverse recovery time not exceeding 500 nanoseconds when switching currents greater than 200 milliamps. This classification is important for high-frequency switching applications and power supply circuits.

Q: Can RS1DB-13-F or S1DB-13-F be used as direct replacements?

A: These parts meet the 200 V / 1 A / DO-214AA package requirements but exhibit significantly different speed characteristics. RS1DB-13-F has 150 ns reverse recovery time and 1.3 V forward voltage. S1DB-13-F has 3 µs reverse recovery time and 1.1 V forward voltage. These parts are suitable only for low-frequency rectification applications where switching speed is not critical. Use in high-frequency switching circuits may result in reduced efficiency and increased heat generation.

Q: What is the significance of reverse leakage current variation among substitutes?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias condition. CEFB103-G specifies 5 µA @ 200 V. MURS120 series specifies 2 µA (lower leakage), while MUR120S specifies 50 µA (higher leakage). Lower leakage is generally preferred for precision circuits and high-impedance applications. Higher leakage may impact circuit performance in sensitive analog applications but is typically acceptable for power rectification.

Q: Are all substitute parts RoHS compliant?

A: Yes. All active substitute parts listed carry ROHS3 compliance certification. The original CEFB103-G is marked as REACH Unaffected, and all substitutes maintain this status. All parts are suitable for applications requiring environmental compliance.

Q: Which substitute offers the best thermal performance?

A: MURS120-13-F, STTH1R02U, STTH2R02U, and STTH2R02UY all specify maximum junction temperature of 175°C, compared to CEFB103-G at 150°C. This provides 25°C additional thermal margin. For applications with elevated ambient temperatures or high power dissipation, these parts are preferred.

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