CEFB101-G Equivalent & Substitute Parts Reference

Part Overview

The CEFB101-G is a general-purpose rectifier diode manufactured by Comchip Technology, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as obsolete, which necessitates identification of functionally equivalent substitute parts for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while meeting modern product status and compliance requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	5	µA @ 50 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AA, SMB	—
Operating Temperature - Junction (Max)	150	°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the CEFB101-G is determined by the following mandatory electrical and mechanical parameters:

Primary Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Package / Case: Must be DO-214AA or SMB equivalent
Mounting Type: Must be Surface Mount
Speed Classification: Must be Fast Recovery ≤ 500ns, > 200mA (Io)

Secondary Compatibility Criteria:

Voltage - Forward (Vf) (Max) @ If: Must not significantly exceed the original specification to maintain circuit performance
Reverse Recovery Time (trr): Lower values indicate improved performance; higher values remain acceptable within fast recovery classification
Current - Reverse Leakage @ Vr: Lower values indicate improved performance; higher values remain acceptable within standard diode specifications
Operating Temperature - Junction: Must support the application's thermal environment

All substitute parts listed below meet or exceed these criteria. Parts with higher current ratings (2 A) are acceptable as they provide design margin while maintaining voltage and package compatibility.

Parameter Comparison

Parameter	CEFB101-G (Main)	ES2A-E3/5BT	RS1AB-13-F	SURS8105T3G-VF01
Manufacturer	Comchip Technology	Vishay General Semiconductor - Diodes Division	Diodes Incorporated	onsemi
Product Status	Obsolete	Active	Active	Active
Voltage - DC Reverse (Vr) (Max)	50 V	50 V	50 V	50 V
Current - Average Rectified (Io)	1 A	2 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	900 mV @ 2 A	1.3 V @ 1 A	875 mV @ 1 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Reverse Recovery Time (trr)	25 ns	30 ns	150 ns	35 ns
Current - Reverse Leakage @ Vr	5 µA @ 50 V	10 µA @ 50 V	5 µA @ 50 V	2 µA @ 50 V
Package / Case	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction (Max)	150°C	150°C	150°C	175°C
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

ES2A-E3/5BT (Vishay General Semiconductor - Diodes Division)

This substitute provides a 2 A current rating, delivering 100% design margin above the 1 A requirement of the CEFB101-G. Electrical parameters are closely matched, with forward voltage specification of 900 mV @ 2 A remaining within acceptable operating range. The part is in active product status with ROHS3 compliance and unlimited moisture sensitivity rating. Reverse recovery time of 30 ns is marginally higher than the original 25 ns but remains within fast recovery classification. This part is suitable for applications requiring enhanced current capacity or extended component lifecycle.

RS1AB-13-F (Diodes Incorporated)

This substitute maintains the 1 A current rating with identical voltage specifications. The part is in active product status with ROHS3 compliance. Forward voltage specification of 1.3 V @ 1 A is elevated compared to the original 875 mV, which may result in increased power dissipation in current-limited applications. Reverse recovery time of 150 ns is significantly higher than the original 25 ns but remains within the fast recovery classification threshold. This part is suitable for general-purpose applications where forward voltage elevation is acceptable. Inventory availability is substantial at 15,300 pieces.

SURS8105T3G-VF01 (onsemi)

This substitute maintains the 1 A current rating with forward voltage specification of 875 mV @ 1 A, matching the original CEFB101-G exactly. The part is in active product status with ROHS3 compliance and carries AEC-Q101 automotive qualification. Operating temperature range extends to 175°C, providing 25°C additional thermal margin. Reverse recovery time of 35 ns and reverse leakage current of 2 µA represent improved performance characteristics. This part is suitable for applications requiring automotive-grade reliability or extended thermal operating range.

Frequently Asked Questions (FAQ)

Q: Can ES2A-E3/5BT be used as a direct replacement for CEFB101-G?

A: Yes. ES2A-E3/5BT meets all mandatory compatibility criteria: 50 V reverse voltage rating, 2 A current rating (exceeds 1 A requirement), DO-214AA SMB package, surface mount configuration, and fast recovery speed classification. The higher current rating provides design margin. Forward voltage specification of 900 mV @ 2 A is acceptable for most applications. Verify circuit current requirements do not exceed 2 A and that power dissipation remains within acceptable limits.

Q: What is the primary difference between RS1AB-13-F and SURS8105T3G-VF01?

A: Both parts maintain 1 A current rating and 50 V voltage rating. RS1AB-13-F has forward voltage of 1.3 V @ 1 A and reverse recovery time of 150 ns. SURS8105T3G-VF01 has forward voltage of 875 mV @ 1 A (matching the original), reverse recovery time of 35 ns, and automotive qualification (AEC-Q101). SURS8105T3G-VF01 is preferred for applications requiring lower power dissipation or automotive-grade reliability.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts use DO-214AA (SMB) surface mount package, ensuring mechanical and thermal compatibility with the original CEFB101-G. PCB footprints and assembly processes remain unchanged.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This classification indicates the diode exhibits fast recovery characteristics with reverse recovery time not exceeding 500 nanoseconds when reverse current exceeds 200 milliamps. All listed parts meet this specification, ensuring low switching losses in high-frequency applications.

Q: Why is CEFB101-G classified as obsolete?

A: Obsolete status indicates the manufacturer (Comchip Technology) has discontinued production. The substitute parts listed are all in active production status, ensuring long-term availability and supply chain continuity.

Q: Do all substitute parts comply with RoHS3?

A: Yes. ES2A-E3/5BT, RS1AB-13-F, and SURS8105T3G-VF01 are all ROHS3 compliant, meeting current environmental and hazardous substance restrictions.

Q: What is the significance of the 2 µA reverse leakage current in SURS8105T3G-VF01?

A: Lower reverse leakage current indicates reduced leakage in the reverse-biased state, resulting in lower standby power consumption and improved circuit performance in sensitive applications. SURS8105T3G-VF01 at 2 µA is superior to the original 5 µA specification.

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