CEFA103-G Equivalent & Substitute Parts Reference

Part Overview

The CEFA103-G is a superfast recovery rectifier diode manufactured by Comchip Technology, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications.

The CEFA103-G serves in general-purpose rectification circuits requiring fast recovery characteristics. Due to its obsolete status, active alternative parts from current manufacturers are required to maintain design continuity and ensure supply chain reliability.

Substiute Parts

CEFA103-G
Comchip TechnologyIn Stock: 836CEFA103-G Datasheet
CEFA103-G
Current Part
ES1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2328676ES1D-E3/61T Datasheet
ES1D-E3/61T
Direct
ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
Upgrade
EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
EGF1D
MFR Recommended
EGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15349EGF1D-E3/5CA Datasheet
EGF1D-E3/5CA
MFR Recommended
EGF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30174EGF1D-E3/67A Datasheet
EGF1D-E3/67A
MFR Recommended
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
MFR Recommended
ES1D-LTP
Micro Commercial CoIn Stock: 335351ES1D-LTP Datasheet
ES1D-LTP
MFR Recommended
FS1DE-TP
Micro Commercial CoIn Stock: 918FS1DE-TP Datasheet
FS1DE-TP
MFR Recommended
GF1D
Fairchild SemiconductorIn Stock: 18487GF1D Datasheet
GF1D
MFR Recommended
GF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 9688GF1D-E3/67A Datasheet
GF1D-E3/67A
MFR Recommended
GF1D/1754
Vishay General Semiconductor - Diodes DivisionIn Stock: 1026GF1D/1754 Datasheet
GF1D/1754
MFR Recommended
MURS1D-TP
Micro Commercial CoIn Stock: 1050MURS1D-TP Datasheet
MURS1D-TP
MFR Recommended
RGF1D
onsemiIn Stock: 53315RGF1D Datasheet
RGF1D
MFR Recommended
RGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15215RGF1D-E3/5CA Datasheet
RGF1D-E3/5CA
MFR Recommended
RGF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 8747RGF1D-E3/67A Datasheet
RGF1D-E3/67A
MFR Recommended
RS1D
Taiwan Semiconductor CorporationIn Stock: 20226RS1D Datasheet
RS1D
MFR Recommended
RS1D-13-F
Diodes IncorporatedIn Stock: 53982RS1D-13-F Datasheet
RS1D-13-F
MFR Recommended
RS1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 8451RS1D-E3/5AT Datasheet
RS1D-E3/5AT
MFR Recommended
RS1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2231RS1D-E3/61T Datasheet
RS1D-E3/61T
MFR Recommended
RS1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1137RS1D-M3/5AT Datasheet
RS1D-M3/5AT
MFR Recommended
RS1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1450RS1D-M3/61T Datasheet
RS1D-M3/61T
MFR Recommended
RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
MFR Recommended
RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
MFR Recommended
S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
MFR Recommended
S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
MFR Recommended
STTH1R02A
STMicroelectronicsIn Stock: 1738STTH1R02A Datasheet
STTH1R02A
MFR Recommended
STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
STTH2R02A
MFR Recommended
U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
MFR Recommended
U1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188U1D-M3/61T Datasheet
U1D-M3/61T
MFR Recommended
US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
MFR Recommended
US1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 83907US1D-E3/61T Datasheet
US1D-E3/61T
MFR Recommended
US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1 A mV
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction (Max) 150 °C
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the CEFA103-G is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): ≤ 25 ns (preferred) or ≤ 50 ns (acceptable)
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V
  • Package / Case: DO-214AC (SMA) or DO-214BA (GF1) for mechanical compatibility
  • Mounting Type: Surface Mount

Acceptable Variations:

  • Forward voltage (Vf) may vary within ±50 mV of 920 mV @ 1 A
  • Reverse recovery time (trr) up to 50 ns is acceptable for general-purpose applications
  • Operating temperature range may exceed the original specification
  • RoHS3 compliance and REACH unaffected status are preferred for new designs

Substitute parts are grouped into two categories:

Direct Equivalents (DO-214AC/SMA Package): Parts maintaining the original SMA package form factor with fast recovery characteristics (trr ≤ 50 ns).

Package Variants (DO-214BA/GF1 Package): Parts with identical electrical specifications but different surface mount package geometry (DO-214BA), suitable for applications where package footprint can be accommodated.

Parameter Comparison

Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ 1A (mV) trr (ns) Ir @ 200V (µA) Package Status
CEFA103-G Comchip Technology 200 1 920 25 5 DO-214AC (SMA) Obsolete
ES1D-E3/61T Vishay General Semiconductor 200 1 920 25 5 DO-214AC (SMA) Active
ES1D-13-F Diodes Incorporated 200 1 920 25 5 DO-214AC (SMA) Active
EGF1D onsemi 200 1 1000 50 10 DO-214AC (SMA) Not For New Designs
EGF1D-E3/5CA Vishay General Semiconductor 200 1 1000 50 5 DO-214BA (GF1) Active
EGF1D-E3/67A Vishay General Semiconductor 200 1 1000 50 5 DO-214BA (GF1) Active
ES1D EVVO Semi 200 1 1000 35 5 DO-214AC (SMA) Active
ES1D-LTP Micro Commercial Co 200 1 950 35 5 DO-214AC (SMA) Active
FS1DE-TP Micro Commercial Co 200 1 1300 150 5 DO-214AC (SMA) Obsolete
GF1D Fairchild Semiconductor 200 1 1000 2000 5 DO-214AC (SMA) Active
GF1D-E3/67A Vishay General Semiconductor 200 1 1100 2000 5 DO-214BA (GF1) Active

Engineering Selection Recommendations

Tier 1 - Direct Electrical and Package Equivalents (Recommended for Replacement):

ES1D-E3/61T (Vishay General Semiconductor) and ES1D-13-F (Diodes Incorporated) are the primary recommended substitutes. Both parts match the CEFA103-G in all critical electrical parameters: 200 V reverse voltage, 1 A average rectified current, 920 mV forward voltage at 1 A, and 25 ns reverse recovery time. Both are in active production status with RoHS3 compliance and REACH unaffected certification. The DO-214AC (SMA) package maintains identical PCB footprint compatibility.

Tier 2 - Fast Recovery Alternatives with Minor Parameter Variance:

ES1D-LTP (Micro Commercial Co) provides fast recovery performance with 35 ns reverse recovery time and 950 mV forward voltage, within acceptable tolerance of the original specification. This part is in active production with RoHS3 compliance and extended operating temperature range (-65°C to 175°C).

ES1D (EVVO Semi) offers 35 ns reverse recovery time with 1000 mV forward voltage. Active production status and RoHS3 compliance support long-term availability.

Tier 3 - Standard Recovery Alternatives (Limited Application Scope):

EGF1D-E3/5CA and EGF1D-E3/67A (Vishay General Semiconductor, SUPERECTIFIER® series) feature 50 ns reverse recovery time and 1000 mV forward voltage in DO-214BA (GF1) package. These parts are suitable only for applications where the longer recovery time and different package footprint are acceptable. Both are in active production with RoHS3 compliance.

GF1D (Fairchild Semiconductor) exhibits standard recovery characteristics (2 µs reverse recovery time) and is not recommended for applications requiring fast recovery performance. This part is in active production but represents a significant performance downgrade.

Not Recommended:

EGF1D (onsemi) is marked "Not For New Designs" and should not be selected for new applications.

FS1DE-TP (Micro Commercial Co) is obsolete and exhibits 150 ns reverse recovery time, exceeding acceptable fast recovery specifications.

Frequently Asked Questions (FAQ)

Q: Can ES1D-E3/61T directly replace CEFA103-G without PCB modification?

A: Yes. ES1D-E3/61T maintains identical electrical specifications (200 V, 1 A, 920 mV @ 1 A, 25 ns trr) and uses the same DO-214AC (SMA) package. No PCB layout changes are required.

Q: What is the difference between DO-214AC (SMA) and DO-214BA (GF1) packages?

A: Both are surface mount packages for 1 A rectifier diodes with identical electrical ratings. DO-214AC (SMA) is the smaller package; DO-214BA (GF1) is larger. PCB footprints differ and are not interchangeable without layout redesign. EGF1D-E3/5CA and EGF1D-E3/67A use DO-214BA packaging.

Q: Why is reverse recovery time (trr) important for substitution?

A: Reverse recovery time determines switching speed in rectification circuits. The CEFA103-G specifies 25 ns fast recovery. Substitutes with trr ≤ 50 ns maintain fast recovery classification. Parts with trr > 500 ns (standard recovery) are unsuitable for high-frequency applications and represent functional downgrade.

Q: Are all recommended substitutes RoHS3 compliant?

A: Yes. All Tier 1 and Tier 2 recommended substitutes carry RoHS3 compliance certification and REACH unaffected status, meeting current environmental and regulatory requirements.

Q: Can GF1D replace CEFA103-G in existing designs?

A: GF1D is electrically compatible in voltage and current ratings but exhibits standard recovery characteristics (2 µs trr) versus fast recovery (25 ns trr) of the original. Substitution is acceptable only if circuit design does not depend on fast switching performance. GF1D is in active production but represents a performance trade-off.

Q: What inventory considerations apply to substitute selection?

A: ES1D-E3/61T has 2,328,659 pcs in stock; ES1D-13-F has 550,400 pcs; ES1D-LTP has 335,300 pcs. All Tier 1 and Tier 2 substitutes maintain substantial inventory levels, ensuring supply chain continuity.

Q: Is forward voltage (Vf) variation between substitutes significant?

A: The CEFA103-G specifies 920 mV @ 1 A. Substitutes range from 920 mV to 1100 mV. Variation of ±80 mV is acceptable in general-purpose rectification. Applications with strict voltage regulation requirements should verify forward voltage performance in circuit simulation before production release.

Q: Can ES1D-LTP be used in high-temperature applications?

A: Yes. ES1D-LTP operates from -65°C to 175°C junction temperature, exceeding the CEFA103-G specification of 150°C maximum. This part is suitable for elevated ambient temperature environments.

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