CDST-7000-G Equivalent & Substitute Parts Reference

Part Overview

The CDST-7000-G is a general-purpose diode array manufactured by Comchip Technology, configured as 1 pair series connection with 100 V reverse voltage rating and 200 mA average rectified current per diode. The device is packaged in SOT-23-3 (TO-236-3, SC-59) surface mount configuration and maintains active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified to address inventory availability, supply chain continuity, and equivalent electrical performance within the specified parameter ranges for this diode array category.

Substiute Parts

CDST-7000-G
Comchip TechnologyIn Stock: 917CDST-7000-G Datasheet
CDST-7000-G
Current Part
MMBD7000-G3-18
Vishay General Semiconductor - Diodes DivisionIn Stock: 10928MMBD7000-G3-18 Datasheet
MMBD7000-G3-18
Direct
MMBD7000-TP
Micro Commercial CoIn Stock: 3323MMBD7000-TP Datasheet
MMBD7000-TP
Direct
BAV99,215
Nexperia USA Inc.In Stock: 36402BAV99,215 Datasheet
BAV99,215
MFR Recommended
BAV99,235
Nexperia USA Inc.In Stock: 644910BAV99,235 Datasheet
BAV99,235
MFR Recommended
MMBD1203
onsemiIn Stock: 31081MMBD1203 Datasheet
MMBD1203
MFR Recommended
PMBD7000,215
Nexperia USA Inc.In Stock: 4453PMBD7000,215 Datasheet
PMBD7000,215
MFR Recommended
PMBD7000,235
NXP USA Inc.In Stock: 16675PMBD7000,235 Datasheet
PMBD7000,235
MFR Recommended
MMBD7000-E3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 4225MMBD7000-E3-08 Datasheet
MMBD7000-E3-08
Parametric Equivalent
MMBD7000-E3-18
Vishay General Semiconductor - Diodes DivisionIn Stock: 9787MMBD7000-E3-18 Datasheet
MMBD7000-E3-18
Parametric Equivalent
MMBD7000-HE3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 1010MMBD7000-HE3-08 Datasheet
MMBD7000-HE3-08
Parametric Equivalent
MMBD7000-HE3-18
Vishay General Semiconductor - Diodes DivisionIn Stock: 9620MMBD7000-HE3-18 Datasheet
MMBD7000-HE3-18
Parametric Equivalent
MMBD7000_R1_00001
Panjit International Inc.In Stock: 68473MMBD7000_R1_00001 Datasheet
MMBD7000_R1_00001
Parametric Equivalent
MMBD7000LT1G
onsemiIn Stock: 245183MMBD7000LT1G Datasheet
MMBD7000LT1G
Parametric Equivalent
MMBD7000LT3G
onsemiIn Stock: 10339MMBD7000LT3G Datasheet
MMBD7000LT3G
Parametric Equivalent
SMMBD7000LT1G
onsemiIn Stock: 35143SMMBD7000LT1G Datasheet
SMMBD7000LT1G
Parametric Equivalent
SMMBD7000LT3G
onsemiIn Stock: 10325SMMBD7000LT3G Datasheet
SMMBD7000LT3G
Parametric Equivalent

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 200 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 3 µA @ 100 V
Operating Temperature - Junction (Max) 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the CDST-7000-G are classified into three categories based on electrical and mechanical compatibility:

Direct Substitutes (Identical Electrical Performance): Parts that match all critical parameters: 100 V reverse voltage, 200 mA average rectified current, SOT-23-3 package, 4 ns reverse recovery time, and 150°C maximum junction temperature. These parts are interchangeable without circuit redesign.

Functional Equivalents (Reduced Current Rating): Parts rated at 100 mA average rectified current with identical voltage, package, and temperature specifications. These are suitable for applications where the circuit current requirement does not exceed 100 mA.

Manufacturer-Recommended Alternatives (Enhanced Performance): Parts rated at 215 mA average rectified current with fast recovery characteristics (≤500 ns, >200 mA Io), automotive-grade qualification (AEC-Q101), and identical voltage and package specifications. These provide higher current capacity and automotive reliability.

Parametric Equivalents (Extended Temperature Range): Parts with identical electrical specifications but extended operating temperature range (-55°C to 150°C) or obsolete status requiring inventory transition planning.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io (per Diode) [mA] Vf (Max) @ If trr [ns] Tj (Max) [°C] Package Product Status Substitution Category
CDST-7000-G Comchip Technology 100 200 1.1 V @ 100 mA 4 150 SOT-23-3 Active Reference Part
MMBD7000-G3-18 Vishay General Semiconductor 100 100 1.1 V @ 100 mA 4 150 SOT-23-3 Active Functional Equivalent
MMBD7000-TP Micro Commercial Co 100 200 820 mV @ 10 mA 4 150 SOT-23-3 Active Direct Substitute
BAV99,215 Nexperia USA Inc. 100 215 1.25 V @ 150 mA 4 150 SOT-23-3 Active MFR Recommended
BAV99,235 Nexperia USA Inc. 100 215 1.25 V @ 150 mA 4 150 SOT-23-3 Active MFR Recommended
MMBD1203 onsemi 100 200 1.0 V @ 200 mA 4 150 SOT-23-3 Active MFR Recommended
PMBD7000,215 Nexperia USA Inc. 100 215 1.25 V @ 150 mA 4 150 SOT-23-3 Active MFR Recommended
PMBD7000,235 NXP USA Inc. 100 215 1.25 V @ 150 mA 4 150 SOT-23-3 Active MFR Recommended
MMBD7000-E3-08 Vishay General Semiconductor 100 200 1.1 V @ 100 mA 4 150 SOT-23-3 Active Parametric Equivalent
MMBD7000-E3-18 Vishay General Semiconductor 100 200 1.1 V @ 100 mA 4 150 SOT-23-3 Active Parametric Equivalent
MMBD7000-HE3-08 Vishay General Semiconductor 100 200 1.1 V @ 100 mA 4 150 SOT-23-3 Obsolete Parametric Equivalent

Engineering Selection Recommendations

For Direct Replacement (No Circuit Modification Required):

Select MMBD7000-TP (Micro Commercial Co) or MMBD1203 (onsemi) when 200 mA average rectified current and 100 V reverse voltage specifications must be maintained. Both parts are active products with ROHS3 compliance, SOT-23-3 packaging, and identical diode configuration. MMBD1203 offers lower forward voltage (1.0 V @ 200 mA) compared to the reference part (1.1 V @ 100 mA), resulting in reduced power dissipation in high-current applications.

For Enhanced Current Capacity:

Select BAV99,215, BAV99,235, PMBD7000,215, or PMBD7000,235 when circuit design permits higher current handling (215 mA). These parts maintain 100 V reverse voltage and SOT-23-3 packaging. BAV99 series and PMBD7000 series include fast recovery characteristics (≤500 ns, >200 mA Io) and automotive-grade qualification (AEC-Q101), suitable for automotive and industrial applications requiring enhanced reliability.

For Reduced Current Applications:

Select MMBD7000-G3-18 (Vishay) when circuit current requirement does not exceed 100 mA. This part maintains identical voltage, package, temperature, and reverse recovery specifications while offering lower current rating.

For Extended Temperature Range:

Select MMBD7000-E3-08 (Vishay) when operating temperature range must extend to -55°C. This part provides identical electrical specifications to the reference part with extended junction temperature range (-55°C to 150°C).

Avoid Obsolete Parts:

MMBD7000-HE3-08 is marked obsolete. Transition to active alternatives: MMBD7000-E3-18, MMBD7000-E3-08, or MMBD1203 for continued supply chain support.

Frequently Asked Questions (FAQ)

Q: Can MMBD7000-G3-18 replace CDST-7000-G in all applications?

A: MMBD7000-G3-18 is a functional equivalent with reduced current rating (100 mA vs. 200 mA). It is suitable only for applications where circuit current does not exceed 100 mA. Verify circuit current requirements before substitution. All other electrical parameters (voltage, package, temperature, recovery time) are identical.

Q: What is the difference between BAV99,215 and PMBD7000,215?

A: Both parts share identical electrical specifications: 100 V reverse voltage, 215 mA average rectified current, 1.25 V forward voltage @ 150 mA, 4 ns reverse recovery time, and SOT-23-3 packaging. BAV99,215 is manufactured by Nexperia USA Inc. with automotive-grade qualification (AEC-Q101). PMBD7000,215 is manufactured by Nexperia USA Inc. Inventory availability and packaging format (Cut Tape vs. Tape & Reel) differ between variants.

Q: Is MMBD7000-HE3-08 still available for new designs?

A: MMBD7000-HE3-08 is marked obsolete. New designs must transition to active alternatives. MMBD7000-E3-18 and MMBD7000-E3-08 provide identical electrical specifications with active product status. MMBD1203 offers equivalent performance with lower forward voltage characteristics.

Q: What are the packaging differences among substitute parts?

A: All substitute parts use SOT-23-3 (TO-236-3, SC-59) surface mount package. Packaging format differs: CDST-7000-G, MMBD7000-TP, MMBD7000-E3-18, and MMBD7000-HE3-08 are supplied in Tape & Reel (TR). MMBD7000-G3-18, MMBD7000-E3-08, MMBD1203, PMBD7000,215, and BAV99,215 are supplied in Cut Tape (CT) & Digi-Reel® or equivalent. Verify reel format compatibility with assembly equipment before procurement.

Q: Can I use BAV99,235 or PMBD7000,235 in place of CDST-7000-G?

A: Yes. Both parts meet or exceed CDST-7000-G specifications: 100 V reverse voltage, 215 mA average rectified current (exceeds 200 mA requirement), identical SOT-23-3 package, 4 ns reverse recovery time, and 150°C maximum junction temperature. These parts are suitable for direct substitution with improved current margin. Verify packaging format (Tape & Reel vs. Cut Tape) compatibility with assembly process.

Q: What is the significance of reverse recovery time (trr) in diode array selection?

A: Reverse recovery time (trr) of 4 ns is specified for all substitute parts and the reference part. This parameter determines switching speed and is critical for high-frequency rectification and signal switching applications. All listed substitutes maintain identical 4 ns recovery time, ensuring equivalent performance in time-sensitive circuits.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All active substitute parts listed (MMBD7000-TP, MMBD7000-G3-18, BAV99,215, BAV99,235, MMBD1203, PMBD7000,215, PMBD7000,235, MMBD7000-E3-08, MMBD7000-E3-18) are ROHS3 compliant with MSL 1 (Unlimited). MMBD7000-HE3-08 is also ROHS3 compliant but marked obsolete.

Q: Which substitute offers the lowest forward voltage drop?

A: MMBD7000-TP specifies 820 mV @ 10 mA forward voltage, the lowest among listed substitutes. MMBD1203 specifies 1.0 V @ 200 mA. The reference part CDST-7000-G specifies 1.1 V @ 100 mA. Lower forward voltage reduces power dissipation in rectification circuits. Verify forward voltage measurement conditions match circuit operating points before final selection.

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