CDM22012-800LRFP SL N-Channel 800V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The CDM22012-800LRFP SL is an N-Channel 800V 12A MOSFET manufactured by Central Semiconductor Corp in TO-220FP package. This device is classified as Obsolete, necessitating identification of active equivalent and substitute parts for ongoing applications. The 800V drain-source voltage rating and 12A continuous drain current capability position this component in high-voltage switching applications. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original design.

Key Parameters

Parameter	CDM22012-800LRFP SL	Unit
FET Type	N-Channel	—
Drain-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On) @ 6A, 10V	450	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	52.4	nC
Power Dissipation (Max)	40	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3 Full Pack	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the CDM22012-800LRFP SL is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Substitute parts must equal or exceed 800V to maintain voltage margin in the original circuit topology
Continuous Drain Current (Id): Substitute parts must support minimum 12A continuous current at rated temperature
Package Compatibility: TO-220-3 Full Pack or equivalent through-hole packages with identical pin configuration
On-State Resistance (Rds On): Lower or equivalent resistance ensures thermal performance compatibility
Operating Temperature Range: Minimum -55°C to 150°C to match original specifications
Compliance: RoHS3 compliance and REACH unaffected status required for regulatory alignment

Substitution Logic: Parts are grouped into two categories based on voltage rating:

Direct 800V Substitutes: IPAN80R450P7XKSA1 (Infineon CoolMOS™ P7 series) maintains exact 800V Vdss with 11A Id rating and improved gate charge characteristics
Reduced Voltage Substitutes (600-650V): AOTF12N60L, FDPF15N65, STF10N60DM2, STF11N60DM2, and others operate at lower voltage ratings suitable for applications with reduced voltage stress requirements

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
CDM22012-800LRFP SL	Central Semiconductor	800	12	450	52.4	40	TO-220FP	Obsolete
IPAN80R450P7XKSA1	Infineon	800	11	450	24	29	TO-220-3-FP	Active
AOTF12N60L	Alpha & Omega	600	12	550	50	50	TO-220F	Active
FDPF15N65	onsemi	650	15	440	63	38.5	TO-220F-3	Active
STF10N60DM2	STMicroelectronics	600	8	530	15	25	TO-220FP	Active
STF11N60DM2	STMicroelectronics	600	10	420	16.5	25	TO-220FP	Active
R6009ENX	Rohm Semiconductor	600	9	535	23	40	TO-220FM	Active
IPA60R600P6XKSA1	Infineon	600	4.9	600	12	28	TO-220-FP	Active
IPA60R600P7SXKSA1	Infineon	600	6	600	9	21	TO-220-FP	Active
IPA60R600E6XKSA1	Infineon	600	7.3	600	20.5	28	TO-220-FP	Not For New Designs
FCPF7N60	onsemi	600	7	600	30	31	TO-220F-3	Not For New Designs

Engineering Selection Recommendations

Primary Recommendation: IPAN80R450P7XKSA1

The IPAN80R450P7XKSA1 (Infineon CoolMOS™ P7) is the direct functional equivalent for applications requiring 800V operation. This part maintains the 800V Vdss rating with 11A continuous drain current, matching the voltage class of the original CDM22012-800LRFP SL. The device features superior gate charge characteristics (24 nC versus 52.4 nC), reducing switching losses. Product status is Active with full RoHS3 compliance and REACH unaffected designation. The TO-220-3-FP package is mechanically compatible with standard TO-220 footprints.

Secondary Recommendations for Reduced Voltage Applications:

When circuit topology permits operation below 800V, the following active parts provide enhanced performance:

AOTF12N60L (Alpha & Omega): Maintains 12A current rating at 600V with Active status. Suitable for applications with 600V maximum voltage stress.
FDPF15N65 (onsemi UniFET™): Provides 15A capability at 650V with improved on-state resistance (440 mOhm). Active status with full compliance.
STF11N60DM2 (STMicroelectronics MDmesh™ DM2): Delivers 10A at 600V with superior gate charge (16.5 nC) and lowest on-state resistance (420 mOhm) in the 600V class. Active status.

Parts to Avoid for New Designs:

IPA60R600E6XKSA1 and FCPF7N60 carry "Not For New Designs" status and should not be selected for new applications despite active inventory availability.

Frequently Asked Questions (FAQ)

Q1: Can I use a 600V rated MOSFET to replace the 800V CDM22012-800LRFP SL?

A: Only if your circuit design operates with maximum voltage stress below 600V. The original 800V rating provides design margin for transient overvoltage conditions. Substituting with lower voltage parts requires circuit analysis to confirm voltage stress remains within the substitute part's Vdss rating under all operating conditions, including transients and fault conditions.

Q2: What is the significance of the gate charge (Qg) difference between CDM22012-800LRFP SL and IPAN80R450P7XKSA1?

A: The IPAN80R450P7XKSA1 exhibits 24 nC gate charge versus 52.4 nC for the original part. Lower gate charge reduces switching losses and allows faster switching transitions. This represents an improvement in efficiency and thermal performance, not a compatibility issue.

Q3: The AOTF12N60L maintains 12A current rating like the original. Is it a direct replacement?

A: The AOTF12N60L matches the 12A current specification but operates at 600V versus 800V. It is functionally equivalent only for applications where maximum circuit voltage does not exceed 600V. Verify circuit voltage stress before selection.

Q4: Why do some substitute parts show lower power dissipation ratings?

A: Power dissipation depends on on-state resistance and thermal design. Lower Rds On values and improved semiconductor technology reduce power dissipation at equivalent current levels. This represents improved thermal performance and is not a limitation.

Q5: Are all substitute parts available in the same TO-220 package?

A: All listed substitutes use TO-220-3 Full Pack variants (TO-220F, TO-220FP, TO-220FM, TO-220-3-FP). These packages are mechanically and electrically compatible with standard TO-220 PCB footprints. Verify specific package variant (FP, F, FM) against your PCB design if using automated assembly.

Q6: What does "Not For New Designs" status mean for IPA60R600E6XKSA1 and FCPF7N60?

A: These parts remain available but manufacturers recommend against selection for new product development. They may have limited long-term availability or have been superseded by improved alternatives. Use only for legacy system maintenance or repair.

Q7: How do I verify RoHS3 compliance for my application?

A: All listed substitute parts carry explicit RoHS3 Compliant designation and REACH Unaffected status. This documentation is provided in the parameter tables and confirms regulatory compliance for EU and equivalent markets.

Q8: Can I parallel multiple lower-current MOSFETs to achieve 12A?

A: Paralleling is not recommended based on the provided parameter data. Select a single part with adequate current rating. The listed substitutes include multiple options with 12A or higher ratings (AOTF12N60L at 12A, FDPF15N65 at 15A).

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