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CDBD640-G Equivalent & Substitute Parts Reference
Part Overview
The CDBD640-G is a Schottky rectifier diode manufactured by Comchip Technology, rated for 40 V DC reverse voltage and 6 A average rectified current in a surface mount DPAK package. This component is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating the DPAK surface mount package format.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 40 | V |
| Current - Average Rectified (Io) | 6 | A |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 6 A | mV |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | ns |
| Current - Reverse Leakage @ Vr | 500 µA @ 40 V | µA |
| Operating Temperature - Junction | -50°C ~ 125°C | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Technology | Schottky | — |
Substitute Part Grouping Explanation
Substitution of the CDBD640-G is determined by the following critical parameters:
Voltage Rating Compatibility: The reverse voltage rating must equal or exceed 40 V. Substitute parts with higher voltage ratings (such as 100 V) remain compatible for applications requiring 40 V operation.
Current Rating Compatibility: The average rectified current must equal or exceed 6 A. Substitute parts rated at 5.5 A or higher satisfy this requirement within acceptable design margins.
Package Compatibility: All substitute parts must use the TO-252-3 DPAK (2 Leads + Tab), SC-63 surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.
Technology Requirement: All substitute parts must employ Schottky diode technology to maintain fast recovery characteristics and forward voltage performance.
Speed Specification: Fast recovery performance (≤ 500ns, > 200mA) must be maintained across all substitute selections.
Two substitute parts meet these criteria: the VS-50WQ04FN-M3 (Vishay General Semiconductor) and the MBRD6100CT-TP (Micro Commercial Co).
Parameter Comparison
| Parameter | CDBD640-G (Main Part) | VS-50WQ04FN-M3 (Substitute) | MBRD6100CT-TP (Substitute) |
|---|---|---|---|
| Manufacturer | Comchip Technology | Vishay General Semiconductor - Diodes Division | Micro Commercial Co |
| Product Status | Obsolete | Active | Active |
| Technology | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V | 100 V |
| Current - Average Rectified (Io) | 6 A | 5.5 A | 6 A (per Diode) |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 6 A | 510 mV @ 5 A | 740 mV @ 3 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 500 µA @ 40 V | Not specified | 10 µA @ 100 V |
| Operating Temperature - Junction | -50°C ~ 125°C | -40°C ~ 150°C | -65°C ~ 150°C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| RoHS Status | REACH Unaffected | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
VS-50WQ04FN-M3 Selection Criteria:
The VS-50WQ04FN-M3 provides the closest electrical match to the CDBD640-G. Both parts share identical 40 V reverse voltage ratings and equivalent forward voltage characteristics. The VS-50WQ04FN-M3 is rated for 5.5 A average rectified current, which is 0.5 A below the original specification but remains within acceptable design margins for most applications. This part is currently in active production status with ROHS3 compliance and extended operating temperature range (-40°C ~ 150°C). Inventory availability is substantial at 6493 pieces.
MBRD6100CT-TP Selection Criteria:
The MBRD6100CT-TP is a diode array configuration with 1 Pair Common Cathode topology, rated for 100 V reverse voltage and 6 A per diode. This part exceeds the voltage requirement of the original CDBD640-G and maintains full current compatibility. The higher voltage rating provides design margin for applications subject to voltage transients. This part is in active production with ROHS3 compliance and the widest operating temperature range (-65°C ~ 150°C). Inventory availability is 2367 pieces. The diode array configuration requires verification of circuit topology compatibility before selection.
Both substitute parts carry REACH Unaffected and EAR99 ECCN classifications, matching the regulatory status of the original component.
Frequently Asked Questions (FAQ)
Q: Can the VS-50WQ04FN-M3 be used as a direct replacement for the CDBD640-G?
A: The VS-50WQ04FN-M3 is electrically compatible for applications rated at 40 V and 5.5 A or less. The 0.5 A current reduction must be evaluated against circuit requirements. Both parts use identical DPAK packaging and share fast recovery Schottky technology. Mechanical PCB compatibility is confirmed.
Q: What is the primary difference between the two substitute options?
A: The VS-50WQ04FN-M3 is a single diode rated at 40 V / 5.5 A, matching the original voltage specification. The MBRD6100CT-TP is a diode array (1 Pair Common Cathode) rated at 100 V / 6 A per diode. The array configuration requires circuit topology verification to ensure the common cathode connection is compatible with the application.
Q: Is the MBRD6100CT-TP suitable for 40 V applications?
A: Yes. The MBRD6100CT-TP is rated for 100 V maximum reverse voltage, which exceeds the 40 V requirement. Operation at 40 V is within specification. The higher voltage rating provides additional design margin but does not affect compatibility at lower voltages.
Q: How does the forward voltage differ between these parts?
A: The CDBD640-G specifies 550 mV @ 6 A. The VS-50WQ04FN-M3 specifies 510 mV @ 5 A, representing lower forward voltage loss. The MBRD6100CT-TP specifies 740 mV @ 3 A, which is higher. Forward voltage differences affect power dissipation and thermal performance in high-current applications.
Q: Are all substitute parts ROHS3 compliant?
A: The VS-50WQ04FN-M3 and MBRD6100CT-TP are both ROHS3 compliant. The original CDBD640-G is classified as REACH Unaffected. All three parts carry identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications.
Q: What is the operating temperature range difference?
A: The CDBD640-G operates from -50°C to 125°C. The VS-50WQ04FN-M3 operates from -40°C to 150°C. The MBRD6100CT-TP operates from -65°C to 150°C. Both substitutes provide extended upper temperature limits, suitable for applications requiring higher thermal performance.
Q: Can the MBRD6100CT-TP be used in a single-diode circuit?
A: The MBRD6100CT-TP is a diode array with common cathode configuration. Use in single-diode circuits requires verification that the array topology does not introduce unintended current paths or affect circuit performance. Circuit schematic review is necessary before selection.
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