CDBA3100LR-HF Schottky Diode Equivalent & Substitute Parts

Part Overview

The CDBA3100LR-HF is an active Schottky rectifier diode manufactured by Comchip Technology, rated for 100 V DC reverse voltage with 3 A average rectified current in a surface mount DO-214AC (SMA) package. This component is designed for fast recovery applications requiring low forward voltage drop and rapid switching characteristics. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is currently in active production with 844 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package form factor and mounting technology. Substitution becomes necessary due to supply chain availability, lead time requirements, or design flexibility across manufacturing sources.

Substiute Parts

CDBA3100LR-HF

Comchip TechnologyIn Stock: 902CDBA3100LR-HF Datasheet

Current PartRFQ

VSSA310S-M3/5AT

Vishay General Semiconductor - Diodes DivisionIn Stock: 15812VSSA310S-M3/5AT Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the CDBA3100LR-HF is determined by the following critical parameters:

Mandatory Matching Criteria:

• Voltage - DC Reverse (Vr) (Max): Must equal 100 V
• Package / Case: Must be DO-214AC (SMA) surface mount
• Technology: Must be Schottky diode type
• Mounting Type: Must be Surface Mount
• Speed Classification: Must be Fast Recovery ≤ 500ns, > 200mA (Io)
• RoHS Status: Must be ROHS3 Compliant

Allowable Parameter Variation:

• Current - Average Rectified (Io): Substitute must meet or exceed 3 A requirement
• Voltage - Forward (Vf) (Max) @ If: Substitute forward voltage must not exceed specified maximum
• Current - Reverse Leakage @ Vr: Lower leakage current is acceptable
• Capacitance @ Vr, F: Variation within application tolerance
• Operating Temperature - Junction: Minimum junction temperature must support -50°C to 150°C range

The VSSA310S-M3/5AT from Vishay General Semiconductor qualifies as a substitute based on matching reverse voltage, package type, technology, and fast recovery speed classification. The lower average rectified current rating (1.7 A vs. 3 A) represents a design constraint that limits substitution to applications where the actual circuit current demand does not exceed 1.7 A.

Parameter Comparison

Engineering Selection Recommendations

CDBA3100LR-HF Selection Criteria:

• Primary choice for applications requiring 3 A average rectified current capacity
• Extended junction temperature range (-50°C to 150°C) supports wider thermal operating environments
• Lower forward voltage (750 mV @ 3 A) reduces power dissipation in high-current applications
• ROHS3 compliant with unlimited moisture sensitivity level (MSL 1)
• Active product status with established supply chain (844 units in stock)

VSSA310S-M3/5AT Selection Criteria:

• Suitable only for applications where actual circuit current does not exceed 1.7 A
• Lower reverse leakage current (150 µA vs. 500 µA) benefits low-power standby applications
• Lower junction capacitance (175 pF vs. 250 pF) improves high-frequency switching performance
• ROHS3 compliant with unlimited moisture sensitivity level (MSL 1)
• Active product status with higher inventory availability (15,774 units in stock)
• Operating temperature range (-40°C to 150°C) is suitable for standard industrial and commercial applications

Both parts are ROHS3 compliant and carry EAR99 export classification. Selection between these parts depends on circuit current requirements and thermal operating range specifications.

Frequently Asked Questions (FAQ)

Q: Can VSSA310S-M3/5AT replace CDBA3100LR-HF in all applications?

A: No. The VSSA310S-M3/5AT has a maximum average rectified current rating of 1.7 A, compared to 3 A for the CDBA3100LR-HF. Substitution is valid only when the actual circuit current demand does not exceed 1.7 A. Exceeding this current rating will cause device failure.

Q: What is the impact of the forward voltage difference?

A: The VSSA310S-M3/5AT has a maximum forward voltage of 800 mV @ 3 A, compared to 750 mV @ 3 A for the CDBA3100LR-HF. This 50 mV difference results in slightly higher power dissipation. For 1.7 A operation, the actual forward voltage of the Vishay part may be lower than the maximum specification.

Q: Are both parts pin-compatible?

A: Yes. Both parts use the DO-214AC (SMA) surface mount package with identical pin configuration and footprint. No PCB layout modifications are required for mechanical substitution.

Q: What is the significance of the reverse leakage current difference?

A: The VSSA310S-M3/5AT exhibits lower reverse leakage current (150 µA @ 100 V vs. 500 µA @ 100 V). Lower leakage current reduces standby power consumption and is beneficial in battery-powered or low-power applications.

Q: Does the operating temperature range difference affect substitution?

A: The CDBA3100LR-HF supports -50°C to 150°C, while the VSSA310S-M3/5AT supports -40°C to 150°C. If the application requires operation below -40°C, only the CDBA3100LR-HF is suitable. For standard industrial and commercial temperature ranges, both parts are equivalent.

Q: Are there any compliance or certification differences?

A: Both parts are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). Both carry EAR99 export classification. No compliance barriers exist for substitution.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates that both diodes have a reverse recovery time of 500 nanoseconds or less when switching from forward to reverse bias at currents exceeding 200 mA. This fast recovery characteristic is essential for high-frequency switching applications and power conversion circuits.

Q: How does the capacitance difference affect circuit performance?

A: The VSSA310S-M3/5AT has lower junction capacitance (175 pF vs. 250 pF @ 4V, 1MHz). Lower capacitance reduces switching losses and improves performance in high-frequency applications. This is a beneficial characteristic for substitution in RF and high-speed switching circuits.