CD214A-FS1200 Equivalent & Substitute Parts

Part Overview

The CD214A-FS1200 is a fast recovery rectifier diode manufactured by Bourns Inc., rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design support and procurement continuity. The diode features a 25 ns reverse recovery time and 950 mV maximum forward voltage drop at 1 A, making it suitable for general-purpose rectification applications requiring fast switching characteristics.

Substiute Parts

CD214A-FS1200
Bourns Inc.In Stock: 825CD214A-FS1200 Datasheet
CD214A-FS1200
Current Part
EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
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EGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15349EGF1D-E3/5CA Datasheet
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EGF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30174EGF1D-E3/67A Datasheet
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ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
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GF1D
Fairchild SemiconductorIn Stock: 18487GF1D Datasheet
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GF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 9688GF1D-E3/67A Datasheet
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GF1D/1754
Vishay General Semiconductor - Diodes DivisionIn Stock: 1026GF1D/1754 Datasheet
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STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
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STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
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STTH1R02A
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Package / Case DO-214AC, SMA -
Mounting Type Surface Mount -
Operating Temperature - Junction -55 to 150 °C

Substitute Part Grouping Explanation

Substitution of the CD214A-FS1200 is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Surface Mount
  • Package compatibility: DO-214AC (SMA) or DO-214BA (GF1)

Secondary Compatibility Factors:

  • Reverse Recovery Time (trr): ≤ 50 ns preferred for fast recovery applications
  • Current - Reverse Leakage @ Vr: ≤ 10 µA @ 200 V
  • Operating Temperature Range: Minimum -55°C junction temperature

Substitute parts are grouped into two categories based on package type: DO-214AC (SMA) direct equivalents and DO-214BA (GF1) package variants. Parts with standard recovery characteristics (>500ns) are identified separately due to different switching performance.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ 200V [µA] Speed Package Product Status
CD214A-FS1200 Bourns Inc. 200 1 950 25 5 Fast Recovery ≤ 500ns DO-214AC (SMA) Obsolete
EGF1D onsemi 200 1 1000 50 10 Fast Recovery ≤ 500ns DO-214AC (SMA) Not For New Designs
EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division 200 1 1000 50 5 Fast Recovery ≤ 500ns DO-214BA (GF1) Active
EGF1D-E3/67A Vishay General Semiconductor - Diodes Division 200 1 1000 50 5 Fast Recovery ≤ 500ns DO-214BA (GF1) Active
ES1D EVVO Semi 200 1 1000 35 5 Fast Recovery ≤ 500ns DO-214AC (SMA) Active
ES1D-13-F Diodes Incorporated 200 1 920 25 5 Fast Recovery ≤ 500ns DO-214AC (SMA) Active
GF1D Fairchild Semiconductor 200 1 1000 2000 5 Standard Recovery >500ns DO-214AC (SMA) Active
GF1D-E3/67A Vishay General Semiconductor - Diodes Division 200 1 1100 2000 5 Standard Recovery >500ns DO-214BA (GF1) Active
GF1D/1754 Vishay General Semiconductor - Diodes Division 200 1 1100 2000 5 Standard Recovery >500ns DO-214BA (GF1) Active
STTH102A STMicroelectronics 200 1 970 20 1 Fast Recovery ≤ 500ns DO-214AC (SMA) Active
STTH102AY STMicroelectronics 200 1 970 20 1 Fast Recovery ≤ 500ns DO-214AC (SMA) Active

Engineering Selection Recommendations

Preferred Substitutes (Active Product Status, Fast Recovery):

The ES1D-13-F (Diodes Incorporated) and STTH102A/STTH102AY (STMicroelectronics) are the primary recommended substitutes. Both maintain DO-214AC (SMA) package compatibility with the original CD214A-FS1200, ensuring direct PCB footprint compatibility. ES1D-13-F provides the closest electrical match with 920 mV forward voltage and 25 ns reverse recovery time. STTH102A and STTH102AY offer superior reverse leakage characteristics (1 µA versus 5 µA) and 20 ns reverse recovery time. STTH102AY includes automotive-grade qualification and extended temperature range (-40°C to 175°C).

Alternative Substitutes (Active Product Status, Package Variant):

EGF1D-E3/5CA and EGF1D-E3/67A (Vishay General Semiconductor - Diodes Division) provide active product status with SUPERECTIFIER® series designation. These parts require PCB redesign due to DO-214BA (GF1) package substitution for the original DO-214AC (SMA) package. Both maintain 200 V / 1 A electrical ratings with 50 ns reverse recovery time and 5 µA reverse leakage.

Secondary Substitutes (Standard Recovery Characteristics):

GF1D, GF1D-E3/67A, and GF1D/1754 exhibit standard recovery characteristics (2 µs reverse recovery time) rather than fast recovery. These parts are suitable only for applications where switching speed is not performance-critical. GF1D/1754 carries RoHS non-compliance status and should not be selected for new designs requiring regulatory compliance.

Obsolete or Limited-Use Parts:

EGF1D (onsemi) carries "Not For New Designs" status and should be avoided for new product development. GF1D (Fairchild Semiconductor) is active but exhibits significantly longer reverse recovery time (2 µs) compared to the original specification.

Frequently Asked Questions (FAQ)

Q: Can ES1D-13-F directly replace CD214A-FS1200 without PCB modification?

A: Yes. ES1D-13-F maintains identical DO-214AC (SMA) package and surface mount configuration. Electrical parameters are within acceptable tolerance: 920 mV forward voltage (versus 950 mV original) and 25 ns reverse recovery time (matching original specification).

Q: What is the difference between DO-214AC (SMA) and DO-214BA (GF1) packages?

A: DO-214AC and DO-214BA are distinct surface mount diode packages with different physical dimensions and PCB footprints. DO-214BA (GF1) substitutes require PCB layout redesign. Direct package-compatible substitutes are limited to DO-214AC (SMA) variants: ES1D, ES1D-13-F, STTH102A, STTH102AY, EGF1D, and GF1D.

Q: Why do some substitutes have longer reverse recovery times?

A: GF1D, GF1D-E3/67A, and GF1D/1754 employ standard recovery diode technology with 2 µs reverse recovery time, compared to the original 25 ns fast recovery specification. Standard recovery diodes are suitable for lower-frequency applications but exhibit higher switching losses and slower turn-off characteristics.

Q: Is STTH102AY suitable for automotive applications?

A: Yes. STTH102AY carries automotive-grade qualification and extended operating temperature range (-40°C to 175°C). The original CD214A-FS1200 specifies -55°C to 150°C junction temperature range. STTH102AY provides broader temperature coverage for automotive environments.

Q: What compliance certifications should I verify for new designs?

A: All recommended active substitutes carry ROHS3 compliance. STTH102A and STTH102AY are REACH Unaffected. Verify specific compliance requirements for your application and target market before final component selection.

Q: Can I use EGF1D as a substitute?

A: EGF1D carries "Not For New Designs" product status from onsemi. While electrically compatible, this designation indicates the manufacturer does not recommend this part for new product development. Active alternatives such as ES1D-13-F or STTH102A are preferred.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) affects circuit performance in high-impedance applications. STTH102A and STTH102AY specify 1 µA reverse leakage, compared to 5 µA for the original CD214A-FS1200 and most substitutes. Lower leakage reduces standby current consumption and improves circuit efficiency in sensitive applications.

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