Equivalent & Substitute Parts for CAS100H12AM1

Part Overview

CAS100H12AM1 is a MOSFET array module manufactured by Wolfspeed, Inc., categorized under Transistors, FETs, MOSFETs. It features a 2 N-Channel (Half Bridge) configuration with a drain-to-source voltage rating of 1200V (1.2kV) and a continuous drain current of 168A. This module is chassis mountable and offers a maximum power handling of 568W. The product status is marked as Obsolete, necessitating the identification of compatible alternative models. Finding substitute parts is essential to maintain system design continuity and ensure component availability, especially given its obsolete status and non-compliance with RoHS requirements.

Substiute Parts

CAS100H12AM1
Wolfspeed, Inc.In Stock: 928CAS100H12AM1 Datasheet
CAS100H12AM1
Current Part
BSM180D12P2C101
Rohm SemiconductorIn Stock: 993BSM180D12P2C101 Datasheet
BSM180D12P2C101
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Key Parameters

Manufacturer Part NumberManufacturerCategoryDescriptionConfigurationTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsPower - MaxMounting TypePackage / CaseRoHS StatusMoisture Sensitivity Level (MSL)
CAS100H12AM1Wolfspeed, Inc.Transistors, FETs, MOSFETsMOSFET 2N-CH 1200V 168A MODULE2 N-Channel (Half Bridge)MOSFET (Metal Oxide)1200V (1.2kV)168A20mOhm @ 20A, 20V3.1V @ 50mA9500pF @ 800V568WChassis MountModuleRoHS non-compliant1 (Unlimited)

Substitute Part Grouping Explanation

Substitute models are determined strictly by evaluating the following key parameters: Category, Configuration, Technology, Drain to Source Voltage (Vdss), Current - Continuous Drain (Id) @ 25°C, Power - Max, Mounting Type, Package / Case, RoHS Status, and MSL. Parts are considered compatible substitutes only when they match or exceed electrical, mechanical, and compliance requirements defined by these parameters.

Parameter Comparison

Manufacturer Part NumberManufacturerCategoryDescriptionConfigurationTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CPower - MaxMounting TypePackage / CaseRoHS StatusMoisture Sensitivity Level (MSL)
CAS100H12AM1Wolfspeed, Inc.Transistors, FETs, MOSFETsMOSFET 2N-CH 1200V 168A MODULE2 N-Channel (Half Bridge)MOSFET (Metal Oxide)1200V (1.2kV)168A568WChassis MountModuleRoHS non-compliant1 (Unlimited)
BSM180D12P2C101Rohm SemiconductorTransistors, FETs, MOSFETsSIC 2N-CH 1200V 204A MODULE2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)204A (Tc)1130WModuleModuleROHS3 Compliant1 (Unlimited)

Engineering Selection Recommendations

Based strictly on product status, compliance, and provided certifications: CAS100H12AM1 is obsolete and non-compliant with RoHS requirements, whereas BSM180D12P2C101 is active with ROHS3 compliance and the same Moisture Sensitivity Level (MSL 1). These factors support the use of BSM180D12P2C101 as a substitute in applications requiring suitable compliance documentation and continued sourcing.

Frequently Asked Questions (FAQ)

Q1: What parameters must match to consider a MOSFET module a suitable substitute?
A1: Key parameters include Drain to Source Voltage (Vdss), Current - Continuous Drain (Id) at specified temperatures, Configuration, Mounting Type, Package / Case, RoHS Status, and MSL.

Q2: Are the substitute parts in the same mechanical package as the original part?
A2: Both CAS100H12AM1 and BSM180D12P2C101 are supplied in Module package format.

Q3: How does RoHS status affect substitution decisions?
A3: Compliance with RoHS or other regulations may be a requirement for certain designs or markets; the substitute BSM180D12P2C101 is ROHS3 Compliant, in contrast to the RoHS non-compliant status of CAS100H12AM1.

Q4: Do the electrical characteristics of BSM180D12P2C101 meet or exceed those of CAS100H12AM1?
A4: BSM180D12P2C101 matches the 1200V voltage rating and exceeds the continuous drain current and power ratings listed for CAS100H12AM1.

Q5: Is Moisture Sensitivity Level (MSL) a consideration in this substitution?
A5: Both parts are rated MSL 1 (Unlimited), indicating equivalence in this aspect.

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