C2D10120D SiC Schottky Diode Array Equivalent & Substitute Parts

Part Overview

The C2D10120D is a Silicon Carbide (SiC) Schottky diode array manufactured by Wolfspeed, Inc., configured as a 1 Pair Common Cathode arrangement rated for 1200 V DC reverse voltage and 10 A average rectified current per diode. The device features zero reverse recovery time and is housed in a TO-247-3 through-hole package. This part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	10 A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 5 A
Reverse Recovery Time (trr)	0 ns
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the C2D10120D is determined by the following critical parameters: diode configuration (1 Pair Common Cathode), technology platform (SiC Schottky), voltage rating (1200 V DC reverse), current rating (10 A or higher per diode), package type (TO-247-3), and mounting method (through-hole). Parts meeting these core electrical and mechanical specifications are classified as direct equivalents or parametric equivalents. Parts with reduced current ratings (9 A) are classified as similar alternatives suitable for applications with lower current demands. Parts from alternative manufacturers with identical or superior electrical characteristics and the same package footprint are classified as cross-manufacturer substitutes.

Parameter Comparison

Parameter	C2D10120D (Main)	C4D10120D	LFUSCD20120B	S4D20120D
Manufacturer	Wolfspeed, Inc.	Wolfspeed, Inc.	Littelfuse Inc.	SMC Diode Solutions
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode
Technology	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V	1200 V	1200 V	1200 V
Current - Average Rectified (Io) (per Diode)	10 A	9 A	10 A (DC)	10 A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 5 A	1.8 V @ 5 A	1.7 V @ 20 A	1.8 V @ 10 A
Reverse Recovery Time (trr)	0 ns	0 ns	≤ 500 ns	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 1200 V	150 µA @ 1200 V	250 µA @ 1200 V	30 µA @ 1200 V
Operating Temperature - Junction	-55°C ~ 175°C	-55°C ~ 175°C	175°C (Max)	-55°C ~ 175°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

C4D10120D (Wolfspeed, Inc.) is the primary active substitute from the original manufacturer. This part maintains identical voltage and current ratings, matching forward voltage characteristics, and zero reverse recovery time. The reduced current rating of 9 A per diode represents a 10% reduction from the main part specification. This part is active and RoHS3 compliant, making it suitable for direct replacement in applications where the 9 A rating satisfies circuit requirements.

S4D20120D (SMC Diode Solutions) is a parametric equivalent offering identical voltage and current ratings with superior reverse leakage characteristics (30 µA versus 200 µA). This part maintains zero reverse recovery time and operates across the same temperature range. RoHS3 compliance and active product status support its use in new designs. The lower reverse leakage current provides improved performance in high-voltage applications.

LFUSCD20120B (Littelfuse Inc.) is a cross-manufacturer substitute with matching voltage and current ratings. This part exhibits a slightly lower forward voltage (1.7 V @ 20 A) and faster recovery characteristics (≤ 500 ns). RoHS3 compliance and active status qualify this part for applications requiring alternative sourcing. The maximum junction temperature specification of 175°C (versus the range -55°C to 175°C for other parts) should be evaluated for thermal design considerations.

All substitute parts maintain the TO-247-3 package footprint and through-hole mounting compatibility with the original C2D10120D design.

Frequently Asked Questions (FAQ)

Q: Can C4D10120D replace C2D10120D in all applications?

A: C4D10120D is suitable for applications where the 9 A per diode current rating meets circuit requirements. The 10% reduction in current capacity must be verified against the maximum current demands of the specific application. All other electrical parameters and package specifications are compatible.

Q: What is the primary advantage of S4D20120D over the original C2D10120D?

A: S4D20120D provides superior reverse leakage current performance (30 µA @ 1200 V compared to 200 µA @ 1200 V), resulting in lower standby power dissipation and improved efficiency in high-voltage applications. Current and voltage ratings are identical.

Q: Are all substitute parts RoHS3 compliant?

A: C4D10120D, LFUSCD20120B, and S4D20120D are all RoHS3 compliant. Compliance status should be verified for specific procurement requirements and regional regulations.

Q: Does LFUSCD20120B have different thermal characteristics?

A: LFUSCD20120B specifies a maximum junction temperature of 175°C, whereas C2D10120D, C4D10120D, and S4D20120D specify an operating range of -55°C to 175°C. The maximum temperature is equivalent; however, the absence of a minimum temperature specification should be considered in applications requiring operation below -55°C.

Q: Are there package footprint differences between substitute parts?

A: All substitute parts use the TO-247-3 package with through-hole mounting. PCB layout and thermal management designs developed for C2D10120D are directly compatible with all listed substitutes.

Q: Which substitute part has the lowest reverse recovery time?

A: C4D10120D and S4D20120D both feature zero reverse recovery time (0 ns), matching the original C2D10120D specification. LFUSCD20120B specifies fast recovery with trr ≤ 500 ns, which is acceptable for most applications but represents a difference in switching characteristics.

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