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BZX84C33LT3 Equivalent & Substitute Parts
Part Overview
The BZX84C33LT3 is a Zener diode rated at 33 V nominal voltage with 225 mW maximum power dissipation in a surface mount SOT-23-3 (TO-236) package. Manufactured by onsemi, this component is classified as obsolete product status. Due to its obsolete designation, equivalent and substitute parts with active product status are necessary for new designs and ongoing production requirements. Substitute parts maintain the core electrical characteristics while offering improved availability and compliance with current regulatory standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Zener (Nom) | 33 | V |
| Tolerance | ±6% | — |
| Power - Max | 225 | mW |
| Impedance (Max) | 80 | Ohms |
| Current - Reverse Leakage @ Vr | 50 | nA @ 23.1 V |
| Voltage - Forward (Vf) (Max) @ If | 900 | mV @ 10 mA |
| Operating Temperature | -65 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the BZX84C33LT3 is determined by strict equivalence across the following electrical and mechanical parameters:
Critical Matching Parameters:
- Voltage - Zener (Nom): 33 V
- Tolerance: ±6% (or tighter)
- Power - Max: 225 mW (or higher)
- Impedance (Max): 80 Ohms
- Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V (or lower)
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA (or lower)
- Operating Temperature: -65°C to 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Mounting Type: Surface Mount
Substitute parts are grouped into three categories based on their relationship to the main part:
Direct Manufacturer Equivalents: Parts from onsemi with identical electrical specifications and active product status, differing only in packaging format (Tape & Reel vs. Cut Tape).
Parametric Equivalents: Parts from onsemi with identical electrical specifications and active product status, including automotive-grade variants with AEC-Q101 qualification.
Cross-Manufacturer Equivalents: Parts from NXP Semiconductors and Diodes Incorporated that meet or exceed the electrical specifications while maintaining package compatibility.
Parameter Comparison
| Part Number | Manufacturer | Vz (Nom) | Tolerance | Power Max | Zzt (Max) | Ir @ Vr | Vf (Max) @ If | Temp Range | Package | Product Status | RoHS |
|---|---|---|---|---|---|---|---|---|---|---|---|
| BZX84C33LT3 | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Obsolete | Non-compliant |
| BZX84C33LT3G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| BZX84C33LT1G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| SZBZX84C33ET1G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| SZBZX84C33ET3G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| SZBZX84C33LT1G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| SZBZX84C33LT3G | onsemi | 33 V | ±6% | 225 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| BZX84-C33,215 | NXP Semiconductors | 33 V | ±5% | 250 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | Not specified |
| BZX84-C33,235 | Nexperia USA Inc. | 33 V | ±5% | 250 mW | 80 Ω | 50 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
| BZX84C33-7-F | Diodes Incorporated | 33 V | ±6% | 300 mW | 80 Ω | 100 nA @ 23.1 V | 900 mV @ 10 mA | -65 to 150°C | SOT-23-3 | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Recommendation - onsemi Direct Equivalents:
BZX84C33LT3G and BZX84C33LT1G are the preferred substitutes for the obsolete BZX84C33LT3. Both parts are manufactured by onsemi, maintain identical electrical specifications, and carry active product status with ROHS3 compliance. The primary difference between these two parts is packaging format: BZX84C33LT3G is supplied in Tape & Reel format, while BZX84C33LT1G is supplied in Cut Tape & Digi-Reel format. Selection between these two should be based on procurement and assembly requirements.
Automotive-Grade Alternatives:
SZBZX84C33ET1G, SZBZX84C33ET3G, SZBZX84C33LT1G, and SZBZX84C33LT3G are automotive-grade variants from onsemi with AEC-Q101 qualification. These parts are suitable for applications requiring automotive-level reliability and traceability. All maintain identical electrical specifications to the main part and carry active product status with ROHS3 compliance.
Cross-Manufacturer Options:
BZX84-C33,215 and BZX84-C33,235 from NXP Semiconductors (Nexperia) provide equivalent functionality with improved power rating (250 mW vs. 225 mW) and tighter voltage tolerance (±5% vs. ±6%). These parts are active and suitable for direct substitution.
BZX84C33-7-F from Diodes Incorporated offers higher power dissipation capability (300 mW) and is suitable for applications requiring additional thermal margin. This part carries active product status and ROHS3 compliance.
Compliance Considerations:
All recommended substitute parts carry ROHS3 compliance, addressing the non-compliance status of the obsolete BZX84C33LT3. Selection should prioritize parts with active product status to ensure long-term availability and supply chain stability.
Frequently Asked Questions (FAQ)
Q: Can BZX84C33LT3G be used as a direct replacement for BZX84C33LT3?
A: Yes. BZX84C33LT3G is a direct equivalent with identical electrical specifications. The primary difference is product status (Active vs. Obsolete) and packaging format (Tape & Reel). Both parts are manufactured by onsemi and maintain the same 33 V nominal voltage, ±6% tolerance, and 225 mW power rating.
Q: What is the difference between BZX84C33LT3G and BZX84C33LT1G?
A: Both parts are electrically identical with the same specifications. The difference is in packaging format: BZX84C33LT3G is supplied in Tape & Reel (TR) format, while BZX84C33LT1G is supplied in Cut Tape (CT) & Digi-Reel format. Selection depends on assembly line requirements and procurement preferences.
Q: Are the automotive-grade SZBZX84C33 variants suitable for non-automotive applications?
A: Yes. The SZBZX84C33ET1G, SZBZX84C33ET3G, SZBZX84C33LT1G, and SZBZX84C33LT3G variants maintain identical electrical specifications to the standard BZX84C33 parts. AEC-Q101 qualification indicates enhanced reliability testing and traceability, making these parts suitable for any application requiring higher reliability assurance.
Q: Can NXP Semiconductors BZX84-C33,215 or BZX84-C33,235 be used instead of onsemi parts?
A: Yes. Both NXP parts are functionally equivalent with identical 33 V nominal voltage and package type (SOT-23-3). The NXP variants offer improved specifications: 250 mW power rating (vs. 225 mW) and ±5% tolerance (vs. ±6%). These parts are suitable for direct substitution and carry active product status.
Q: What is the significance of the higher power rating in BZX84C33-7-F from Diodes Incorporated?
A: BZX84C33-7-F is rated at 300 mW maximum power dissipation compared to 225 mW for the BZX84C33LT3. This higher rating provides additional thermal margin in applications with higher current demands. The part maintains the same 33 V nominal voltage and SOT-23-3 package, making it suitable for direct substitution in designs requiring enhanced power handling capability.
Q: Are all substitute parts RoHS compliant?
A: All recommended substitute parts carry ROHS3 compliance status. The original BZX84C33LT3 is listed as RoHS non-compliant. Substitution with any of the recommended parts addresses this compliance requirement for new designs and production.
Q: What is the difference between reverse leakage current specifications in BZX84C33-7-F versus other parts?
A: BZX84C33-7-F specifies 100 nA reverse leakage current at 23.1 V, compared to 50 nA for other parts. This higher leakage current is within acceptable limits for Zener diode applications and does not preclude substitution. Selection should be based on specific application requirements for leakage current performance.
Q: Can these parts be used interchangeably in existing designs?
A: Yes, all substitute parts maintain the same SOT-23-3 package footprint and electrical specifications within the specified tolerances. Existing PCB layouts and designs require no modification. Substitution is a direct component swap without design changes.
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