BZX79C4V7 Equivalent & Substitute Parts

Part Overview

The BZX79C4V7 is a 4.7 V zener diode rated for 500 mW power dissipation in a DO-35 through-hole package. Manufactured by onsemi, this component is classified as Active and complies with ROHS3 and REACH standards. The device operates across a temperature range of -65°C to 200°C with ±5% voltage tolerance.

Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when equivalent performance specifications from different manufacturers are needed to maintain supply chain flexibility.

Substiute Parts

BZX79C4V7
onsemiIn Stock: 2719BZX79C4V7 Datasheet
BZX79C4V7
Current Part
BZX79C4V7-T50A
onsemiIn Stock: 13005BZX79C4V7-T50A Datasheet
BZX79C4V7-T50A
Direct
1N5230B
Microchip TechnologyIn Stock: 12681N5230B Datasheet
1N5230B
Similar
1N5337BRLG
onsemiIn Stock: 82661N5337BRLG Datasheet
1N5337BRLG
Similar
BZX79-C4V7,113
NXP SemiconductorsIn Stock: 263874BZX79-C4V7,113 Datasheet
BZX79-C4V7,113
Direct
BZX79-C4V7,133
Nexperia USA Inc.In Stock: 24776BZX79-C4V7,133 Datasheet
BZX79-C4V7,133
Direct
BZX79-C4V7,143
NXP SemiconductorsIn Stock: 171090BZX79-C4V7,143 Datasheet
BZX79-C4V7,143
Direct
1N750A-1
Microchip TechnologyIn Stock: 13451N750A-1 Datasheet
1N750A-1
Similar
BZX79C4V7
Taiwan Semiconductor CorporationIn Stock: 2740BZX79C4V7 Datasheet
BZX79C4V7
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 4.7 V
Tolerance ±5 %
Power - Max 500 mW
Impedance (Max) 80 Ohms
Current - Reverse Leakage @ Vr 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 100 mA
Operating Temperature -65 to 200 °C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial

Substitute Part Grouping Explanation

Substitution of the BZX79C4V7 is determined by the following critical parameters:

Primary Substitution Criteria:

  • Voltage - Zener (Nom): 4.7 V (exact match required)
  • Tolerance: ±5% (exact match required)
  • Power - Max: 500 mW (minimum requirement)
  • Mounting Type: Through Hole (exact match required)
  • Package / Case: DO-35 or equivalent axial configuration

Secondary Compatibility Factors:

  • Impedance (Max): 80 Ohms (reference specification)
  • Current - Reverse Leakage @ Vr: 3 µA @ 2 V (reference specification)
  • Operating Temperature Range: -65°C to 200°C (minimum requirement)

Substitute parts are grouped into three categories:

  1. Direct Manufacturer Equivalents - Identical electrical specifications and packaging from onsemi or cross-referenced manufacturers with different packaging formats (Cut Tape vs. Bulk)
  2. Similar Manufacturer Parts - Alternative manufacturers meeting identical zener voltage, tolerance, and power ratings with minor variations in secondary parameters
  3. Parametric Equivalents - Parts from different manufacturers with matching core specifications but potential variations in impedance or leakage characteristics

Parameter Comparison

Part Number Manufacturer Vz (V) Tolerance (%) Power (mW) Zzt (Ohms) Leakage @ Vr (µA) Vf @ If (V) Temp Range (°C) Package RoHS Status
BZX79C4V7 onsemi 4.7 ±5 500 80 3 @ 2 V 1.5 @ 100 mA -65 to 200 DO-35 ROHS3
BZX79C4V7-T50A onsemi 4.7 ±5 500 80 3 @ 2 V 1.5 @ 100 mA -65 to 200 DO-35 ROHS3
1N5230B Microchip Technology 4.7 ±5 500 19 50 @ 2 V 1.5 @ 200 mA -65 to 175 DO-35 RoHS non-compliant
1N5337BRLG onsemi 4.7 ±5 5000 2 5 @ 1 V 1.2 @ 1 A -65 to 200 Axial ROHS3
BZX79-C4V7,113 NXP Semiconductors 4.7 ±5 400 80 3 @ 2 V 0.9 @ 10 mA -65 to 200 DO-35 Not specified
BZX79-C4V7,133 Nexperia USA Inc. 4.7 ±5 400 80 3 @ 2 V 0.9 @ 10 mA -65 to 200 DO-35 ROHS3
BZX79-C4V7,143 NXP Semiconductors 4.7 ±5 400 80 3 @ 2 V 0.9 @ 10 mA -65 to 200 DO-35 Not specified
1N750A-1 Microchip Technology 4.7 ±5 500 15 5 @ 1.5 V 1.1 @ 200 mA -65 to 175 DO-35 RoHS non-compliant
BZX79C4V7 Taiwan Semiconductor Corporation 4.7 ±5 500 80 3 @ 2 V 1.5 @ 100 mA -65 to 175 DO-35 ROHS3

Engineering Selection Recommendations

Direct Substitution (Highest Compatibility):

BZX79C4V7-T50A from onsemi is a direct substitute with identical electrical specifications. The only difference is packaging format (Cut Tape vs. Bulk), making it suitable for automated assembly processes requiring tape-and-reel delivery.

Equivalent Substitution (Same Electrical Performance):

BZX79C4V7 from Taiwan Semiconductor Corporation provides parametric equivalence with matching zener voltage, tolerance, power rating, and impedance. This part maintains ROHS3 compliance and operates across the required temperature range. The operating temperature maximum is 175°C versus 200°C for the onsemi version.

Conditional Substitution (Lower Power Rating):

BZX79-C4V7,113, BZX79-C4V7,133, and BZX79-C4V7,143 from NXP/Nexperia are suitable substitutes where power dissipation does not exceed 400 mW. These parts maintain identical zener voltage, tolerance, and impedance specifications. BZX79-C4V7,133 carries ROHS3 compliance. All three operate across the full -65°C to 200°C temperature range.

Alternative Substitution (Different Package, Higher Power):

1N5337BRLG from onsemi is a 5 W axial zener diode suitable for applications requiring higher power dissipation. This part maintains the 4.7 V zener voltage and ±5% tolerance but operates in an axial package format rather than DO-35. It is ROHS3 compliant and operates across -65°C to 200°C.

Cross-Manufacturer Substitution (Microchip Technology):

1N5230B and 1N750A-1 from Microchip Technology meet the 4.7 V, ±5% tolerance, and 500 mW power specifications. Both are RoHS non-compliant and operate to 175°C maximum. These parts exhibit lower impedance (19 Ohms and 15 Ohms respectively) and higher reverse leakage characteristics compared to the primary part.

Frequently Asked Questions (FAQ)

Q: Can BZX79C4V7-T50A replace BZX79C4V7 in existing designs?

A: Yes. BZX79C4V7-T50A is a direct electrical equivalent with identical specifications. The difference is packaging format: Cut Tape (CT) versus Bulk. Both are suitable for through-hole assembly. Verify your assembly process accepts the tape-and-reel format.

Q: What is the difference between BZX79-C4V7,113 and BZX79-C4V7,143?

A: Both parts are 4.7 V, 400 mW zener diodes with identical electrical specifications. The primary difference is manufacturer: BZX79-C4V7,113 is from NXP Semiconductors, while BZX79-C4V7,143 is also from NXP Semiconductors. Both use the ALF2 package designation. Verify RoHS compliance requirements for your application.

Q: Can I use 1N5230B as a substitute for BZX79C4V7?

A: 1N5230B meets the core requirements: 4.7 V zener voltage, ±5% tolerance, and 500 mW power rating in a DO-35 package. However, it is RoHS non-compliant and operates to 175°C maximum versus 200°C for BZX79C4V7. Use this substitute only if RoHS compliance is not required and your application operates below 175°C.

Q: Is 1N5337BRLG a suitable replacement for BZX79C4V7?

A: 1N5337BRLG is suitable only if your circuit requires higher power dissipation. It is a 5 W axial zener diode with 4.7 V nominal voltage and ±5% tolerance. The axial package differs from the DO-35 package of BZX79C4V7. Use this part only if board layout and assembly process accommodate axial components and higher power handling is necessary.

Q: What does the impedance specification mean for zener diode substitution?

A: Impedance (Zzt) affects the dynamic response of the zener diode. Lower impedance values indicate better voltage regulation under changing load conditions. BZX79C4V7 specifies 80 Ohms maximum impedance. Substitutes with lower impedance (such as 1N5230B at 19 Ohms or 1N750A-1 at 15 Ohms) provide improved regulation but are not required for basic substitution compatibility.

Q: Are there packaging considerations when substituting BZX79C4V7?

A: Yes. BZX79C4V7 is supplied in DO-35 through-hole package. BZX79C4V7-T50A uses the same package but in Cut Tape format. 1N5337BRLG uses an axial package format. Verify your PCB design, assembly equipment, and soldering process accommodate the substitute package before implementation.

Q: What is the significance of RoHS compliance for zener diode selection?

A: RoHS3 compliance indicates the part does not contain restricted substances (lead, cadmium, mercury, etc.). BZX79C4V7 and most onsemi/Taiwan Semiconductor parts are ROHS3 compliant. Microchip Technology parts (1N5230B, 1N750A-1) are RoHS non-compliant. Select RoHS-compliant substitutes for applications subject to environmental regulations or customer requirements.

Q: Can I substitute BZX79C4V7 with a lower power-rated part?

A: BZX79-C4V7,113, BZX79-C4V7,133, and BZX79-C4V7,143 are rated for 400 mW versus 500 mW for BZX79C4V7. These substitutes are acceptable only if your circuit design ensures power dissipation does not exceed 400 mW. Exceeding the power rating will cause device failure.

Q: What is the operating temperature range consideration for substitution?

A: BZX79C4V7 operates from -65°C to 200°C. Microchip Technology parts (1N5230B, 1N750A-1) and Taiwan Semiconductor BZX79C4V7 operate to 175°C maximum. If your application requires operation above 175°C, use only onsemi or NXP/Nexperia parts rated to 200°C.

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