BZD17C12P RVG Equivalent & Substitute Parts

Part Overview

The BZD17C12P RVG is a 12 V Zener diode rated at 800 mW, manufactured by Taiwan Semiconductor Corporation in Surface Mount Sub SMA packaging (DO-219AB). This component is classified as Active and is ROHS3 compliant. The part operates across a temperature range of -55°C to 175°C and is designed for applications requiring voltage regulation and transient protection in surface mount configurations.

Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, and design flexibility while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Substiute Parts

BZD17C12P RVG
Taiwan Semiconductor CorporationIn Stock: 1148BZD17C12P RVG Datasheet
BZD17C12P RVG
Current Part
BZD17C12P R3G
Taiwan Semiconductor CorporationIn Stock: 761BZD17C12P R3G Datasheet
BZD17C12P R3G
Parametric Equivalent
BZD17C12P-E3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 17117BZD17C12P-E3-08 Datasheet
BZD17C12P-E3-08
Similar
BZD17C12P-E3-18
Vishay General Semiconductor - Diodes DivisionIn Stock: 25278BZD17C12P-E3-18 Datasheet
BZD17C12P-E3-18
Similar
BZD27C12P-E3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 128322BZD27C12P-E3-08 Datasheet
BZD27C12P-E3-08
Similar
BZD27C12P-HE3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 23208BZD27C12P-HE3-08 Datasheet
BZD27C12P-HE3-08
Similar
BZD27C12P-M3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 3734BZD27C12P-M3-08 Datasheet
BZD27C12P-M3-08
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Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 12 V
Power - Max 800 mW
Impedance (Max) 7 Ohms
Current - Reverse Leakage @ Vr 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA
Operating Temperature Range -55 to 175 °C
Package / Case DO-219AB -
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute parts for the BZD17C12P RVG are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - Zener (Nom): 12 V
  • Power - Max: 800 mW
  • Package / Case: DO-219AB
  • Mounting Type: Surface Mount
  • Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Impedance (Max): 7 Ohms

Tolerance Variations: The BZD17C12P RVG specifies ±5.41% tolerance. The parametric equivalent BZD17C12P R3G offers ±5% tolerance, which is tighter and remains compatible for applications requiring the specified voltage regulation characteristics.

Temperature Range Considerations: The main part operates from -55°C to 175°C. Substitute parts from the BZD27 series (BZD27C12P-E3-08, BZD27C12P-HE3-08, BZD27C12P-M3-08) extend the lower operating temperature to -65°C, providing enhanced performance in extreme cold environments while maintaining the upper temperature limit at 175°C.

Manufacturer Variations: Vishay General Semiconductor - Diodes Division manufactures equivalent parts (BZD17C12P-E3-08, BZD17C12P-E3-18) and the BZD27 series alternatives, all meeting the same electrical specifications and DO-219AB package requirements.

Parameter Comparison

Part Number Manufacturer Vz (Nom) Power Max Zzt (Max) Vf (Max) @ If Temp Range Package Tolerance
BZD17C12P RVG Taiwan Semiconductor Corporation 12 V 800 mW 7 Ohms 1.2 V @ 200 mA -55 to 175°C DO-219AB ±5.41%
BZD17C12P R3G Taiwan Semiconductor Corporation 12 V 800 mW 7 Ohms 1.2 V @ 200 mA -55 to 175°C DO-219AB ±5%
BZD17C12P-E3-08 Vishay General Semiconductor - Diodes Division 12 V 800 mW - 1.2 V @ 200 mA -55 to 150°C DO-219AB -
BZD17C12P-E3-18 Vishay General Semiconductor - Diodes Division 12 V 800 mW - 1.2 V @ 200 mA -55 to 150°C DO-219AB -
BZD27C12P-E3-08 Vishay General Semiconductor - Diodes Division 12 V 800 mW 7 Ohms 1.2 V @ 200 mA -65 to 175°C DO-219AB -
BZD27C12P-HE3-08 Vishay General Semiconductor - Diodes Division 12 V 800 mW 7 Ohms 1.2 V @ 200 mA -65 to 175°C DO-219AB -
BZD27C12P-M3-08 Vishay General Semiconductor - Diodes Division 12 V 800 mW 7 Ohms 1.2 V @ 200 mA -65 to 175°C DO-219AB -

Engineering Selection Recommendations

Parametric Equivalent - Same Manufacturer: The BZD17C12P R3G, manufactured by Taiwan Semiconductor Corporation, is the primary parametric equivalent. It maintains identical electrical specifications and temperature range while offering a tighter tolerance of ±5% compared to the ±5.41% of the main part. Both parts are Active status and ROHS3 compliant.

Vishay Equivalents - BZD17 Series: The BZD17C12P-E3-08 and BZD17C12P-E3-18 from Vishay General Semiconductor - Diodes Division are functionally equivalent with matching 12 V nominal voltage and 800 mW power rating. These parts operate across -55°C to 150°C, which is suitable for applications not requiring the extended upper temperature capability of the main part. Both are Active status and ROHS3 compliant.

Extended Temperature Range - BZD27 Series: The BZD27C12P-E3-08, BZD27C12P-HE3-08, and BZD27C12P-M3-08 from Vishay General Semiconductor - Diodes Division provide extended lower temperature operation (-65°C minimum) while maintaining the 175°C upper limit. These parts are suitable for applications requiring enhanced cold-temperature performance. The BZD27C12P-HE3-08 carries AEC-Q101 automotive qualification, making it appropriate for automotive applications.

Compliance and Status: All substitute parts maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and Active product status. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0050.

Frequently Asked Questions (FAQ)

Q: Can BZD17C12P-E3-08 replace BZD17C12P RVG in all applications? A: The BZD17C12P-E3-08 is electrically equivalent for the 12 V, 800 mW specifications. However, it operates to a maximum temperature of 150°C compared to 175°C for the main part. Applications operating above 150°C require the main part or BZD27 series alternatives.

Q: What is the difference between BZD17C12P R3G and BZD17C12P RVG? A: Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical characteristics and temperature range. The primary difference is tolerance: BZD17C12P R3G specifies ±5% while BZD17C12P RVG specifies ±5.41%. The tighter tolerance of the R3G variant may be beneficial for precision voltage regulation applications.

Q: Are BZD27 series parts direct replacements? A: BZD27 series parts (BZD27C12P-E3-08, BZD27C12P-HE3-08, BZD27C12P-M3-08) are electrically and mechanically compatible with identical 12 V, 800 mW ratings and DO-219AB packaging. They offer extended lower temperature operation (-65°C vs. -55°C). The BZD27C12P-HE3-08 includes AEC-Q101 automotive qualification.

Q: What does the packaging designation mean? A: All listed parts use DO-219AB (Sub SMA / SMF) surface mount packaging. This is a standardized package for surface mount Zener diodes. Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® are distribution formats of the same physical package.

Q: Why would I choose BZD27C12P-HE3-08 over other substitutes? A: The BZD27C12P-HE3-08 is qualified to AEC-Q101 automotive standards and operates across -65°C to 175°C. Select this part for automotive applications or systems requiring extended cold-temperature performance with automotive-grade reliability.

Q: Are all substitute parts ROHS3 compliant? A: Yes. All listed substitute parts maintain ROHS3 compliance, matching the environmental and regulatory status of the main part BZD17C12P RVG.

Q: What is the significance of impedance (Zzt) specification? A: Impedance (Zzt) of 7 Ohms maximum is specified for the main part and BZD27 series substitutes. This parameter affects the dynamic response of the Zener diode during transient voltage events. Vishay BZD17 variants do not specify this parameter in the provided data.

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