BYW86TAP Equivalent & Substitute Parts

Part Overview

The BYW86TAP is a 1000 V, 3 A avalanche diode manufactured by Vishay General Semiconductor - Diodes Division, housed in an SOD-64 axial package. This component is classified as Active and is ROHS3 compliant. The BYW86TAP serves applications requiring avalanche protection and reverse voltage suppression in through-hole configurations.

Substitute parts are necessary when the BYW86TAP becomes unavailable, when alternative packaging formats are required for design flexibility, or when equivalent performance specifications can be met by standard general-purpose rectifier diodes with matching electrical ratings.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	V
Reverse Recovery Time (trr)	7.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 800 V
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Operating Temperature - Junction	-55°C ~ 175°C	-
RoHS Status	ROHS3 Compliant	-
Product Status	Active	-

Substitute Part Grouping Explanation

Substitution of the BYW86TAP is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 1000 V minimum
Current - Average Rectified (Io): 3 A minimum
Mounting Type: Through Hole
Package / Case: Axial configuration

Secondary Compatibility Factors:

Forward voltage drop (Vf) at rated current
Reverse recovery time (trr) and recovery speed classification
Reverse leakage current characteristics
Operating temperature range
RoHS and REACH compliance status

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (1000 V, 3 A, Standard Recovery) Parts meeting all primary criteria with standard recovery characteristics (>500 ns): 1N5408-G, 1N5408G, 1N5408GP-TP, 1N5408RLG, FR307GP-TP

Category 2: Reduced Voltage Rating (800 V, 3 A) Parts with lower reverse voltage rating: EGP30K (800 V only, not recommended for 1000 V applications)

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [µs]	Speed Classification	Package	Tj Range [°C]	Product Status	RoHS
BYW86TAP	Vishay	1000	3	1.0 @ 3A	7.5	Standard Recovery >500ns	SOD-64, Axial	-55 to 175	Active	ROHS3
1N5408-G	Comchip Technology	1000	3	0.95 @ 3A	-	Standard Recovery >500ns	DO-201AD, Axial	-65 to 125	Active	ROHS3
1N5408G	Taiwan Semiconductor	1000	3	1.0 @ 3A	-	Standard Recovery >500ns	DO-201AD, Axial	-55 to 150	Active	ROHS3
1N5408GP-TP	Micro Commercial Co	1000	3	1.1 @ 3A	-	Standard Recovery >500ns	DO-201AD, Axial	-55 to 150	Active	ROHS3
1N5408RLG	onsemi	1000	3	1.0 @ 3A	-	Standard Recovery >500ns	DO-201AA/DO-27, Axial	-65 to 150	Not For New Designs	ROHS3
FR307GP-TP	Micro Commercial Co	1000	3	1.3 @ 3A	0.5	Fast Recovery ≤500ns	DO-201AD, Axial	-55 to 150	Active	ROHS3
EGP30K	Fairchild Semiconductor	800	3	1.7 @ 3A	0.075	Fast Recovery ≤500ns	DO-201AD, Axial	-65 to 150	Active	Not specified

Engineering Selection Recommendations

Recommended Substitutes (Active Status, Full Voltage Rating):

1N5408G (Taiwan Semiconductor) - Preferred for new designs. Matches BYW86TAP forward voltage specification (1.0 V @ 3 A), maintains 1000 V reverse voltage rating, and is Active status. Operating temperature range (-55°C to 150°C) covers the BYW86TAP lower range. Highest inventory availability (38,100 pcs).
1N5408GP-TP (Micro Commercial Co) - Active status, 1000 V rating, standard recovery speed. Forward voltage slightly elevated at 1.1 V @ 3 A. Suitable for applications with relaxed forward voltage tolerance. Lower inventory (2,792 pcs).
1N5408-G (Comchip Technology) - Active status, 1000 V rating, lowest forward voltage (0.95 V @ 3 A). Operating temperature range limited to -65°C to 125°C, which does not cover the BYW86TAP upper temperature specification of 175°C. Suitable for applications within -65°C to 125°C range. High inventory (16,615 pcs).
FR307GP-TP (Micro Commercial Co) - Active status, 1000 V rating. Features fast recovery characteristics (≤500 ns, trr = 0.5 µs) compared to BYW86TAP standard recovery (7.5 µs). Forward voltage elevated at 1.3 V @ 3 A. Suitable for high-frequency switching applications. Moderate inventory (5,939 pcs).

Conditional Substitutes:

1N5408RLG (onsemi) - Marked "Not For New Designs." While electrically equivalent (1000 V, 3 A, standard recovery), this part should not be selected for new circuit designs. Existing designs may continue using this part. High inventory (27,400 pcs).

Not Recommended:

EGP30K (Fairchild Semiconductor) - Reduced reverse voltage rating of 800 V does not meet the 1000 V requirement of the BYW86TAP. Forward voltage significantly elevated at 1.7 V @ 3 A. This part is suitable only for applications with 800 V maximum reverse voltage specifications.

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status consistent with the BYW86TAP.

Frequently Asked Questions (FAQ)

Q: Can 1N5408-G replace BYW86TAP in all applications?

A: 1N5408-G is electrically equivalent for voltage and current ratings. However, the operating temperature range differs: 1N5408-G operates from -65°C to 125°C, while BYW86TAP operates from -55°C to 175°C. Substitution is valid only for applications operating within the -65°C to 125°C window.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Recovery speed refers to reverse recovery time (trr). BYW86TAP has standard recovery (7.5 µs, >500 ns classification). FR307GP-TP has fast recovery (0.5 µs, ≤500 ns classification). Fast recovery diodes switch more quickly but may have higher forward voltage. Selection depends on circuit switching frequency requirements.

Q: Why is 1N5408RLG marked "Not For New Designs"?

A: This designation indicates the part is in mature/legacy status. While functionally equivalent, manufacturers recommend using active-status alternatives for new circuit designs to ensure long-term availability and support. Existing designs using 1N5408RLG may continue operation.

Q: Can EGP30K substitute for BYW86TAP?

A: No. EGP30K has a maximum reverse voltage rating of 800 V, which is insufficient for applications requiring 1000 V rating. Using EGP30K in a 1000 V application creates risk of diode failure. EGP30K is suitable only for 800 V maximum applications.

Q: What is the significance of forward voltage differences among substitutes?

A: Forward voltage (Vf) determines power dissipation and voltage drop across the diode during conduction. BYW86TAP specifies 1.0 V @ 3 A. Substitutes range from 0.95 V to 1.3 V. Higher forward voltage increases heat generation. Selection depends on circuit power budget and thermal management capability.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended substitutes (1N5408-G, 1N5408G, 1N5408GP-TP, 1N5408RLG, FR307GP-TP) are ROHS3 compliant. EGP30K RoHS status is not specified in available data. Compliance verification is required before selecting EGP30K for RoHS-regulated applications.

Q: What package differences exist among substitutes?

A: BYW86TAP uses SOD-64 package. All substitutes use DO-201AD or DO-27 (DO-201AA) packages. These are all axial through-hole packages with similar form factors and pin spacing, suitable for direct PCB mounting replacement in most applications. Physical dimensions should be verified for space-constrained layouts.

Q: Which substitute has the best inventory availability?

A: 1N5408G (Taiwan Semiconductor) has the highest inventory at 38,100 pcs. This ensures supply continuity and shorter lead times for high-volume production requirements.

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