BYW84-TAP Equivalent & Substitute Parts

Part Overview

The BYW84-TAP is an avalanche diode rated for 600 V DC reverse voltage and 3 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component features SOD-64 axial packaging and is classified as Active product status. The BYW84-TAP utilizes avalanche technology with standard recovery characteristics, making it suitable for applications requiring overvoltage protection and transient suppression. Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design flexibility across multiple suppliers is needed while maintaining electrical performance within specified parameters.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 3 A
Reverse Recovery Time (trr)	7.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 600 V
Capacitance @ Vr, F	60	pF @ 4V, 1MHz
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BYW84-TAP is determined by the following critical parameters: voltage rating (600 V DC reverse), current rating (3 A average rectified), forward voltage drop (1 V maximum at 3 A), and through-hole axial mounting configuration. The substitute parts are grouped into two categories based on electrical characteristics and packaging format:

Parametric Equivalent (Same Technology Class): The 1N5626-TAP maintains identical avalanche technology, voltage, current, forward voltage, and recovery time specifications. This part differs only in packaging format (Cut Tape versus Tape & Box) and reverse leakage measurement point, making it a direct functional equivalent.

Manufacturer Recommended Alternatives (Standard Technology Class): The 1N5406G, 1N5406RLG, EGP30J, and MR856G are standard recovery diodes that meet the core voltage and current requirements. These parts operate within the same electrical envelope but utilize standard technology rather than avalanche technology. Differences in reverse recovery time, forward voltage characteristics, and reverse leakage specifications are documented in the parameter comparison table.

All substitute parts maintain through-hole axial mounting, RoHS3 compliance, and compatibility with the original application envelope defined by 600 V and 3 A ratings.

Parameter Comparison

Parameter	BYW84-TAP	1N5626-TAP	1N5406G	1N5406RLG	EGP30J	MR856G
Manufacturer	Vishay	Vishay	Taiwan Semiconductor	onsemi	onsemi	onsemi
Voltage - DC Reverse (Vr) (Max)	600 V	600 V	600 V	600 V	600 V	600 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1.7 V @ 3 A	1.25 V @ 3 A
Reverse Recovery Time (trr)	7.5 µs	7.5 µs	Not specified	Not specified	75 ns	300 ns
Current - Reverse Leakage @ Vr	1 µA @ 600 V	1 µA @ 200 V	5 µA @ 600 V	10 µA @ 600 V	5 µA @ 600 V	10 µA @ 600 V
Capacitance @ Vr, F	60 pF @ 4V, 1MHz	60 pF @ 4V, 1MHz	25 pF @ 4V, 1MHz	Not specified	75 pF @ 4V, 1MHz	Not specified
Technology	Avalanche	Avalanche	Standard	Standard	Standard	Standard
Package / Case	SOD-64, Axial	SOD-64, Axial	DO-201AD, Axial	DO-201AA, DO-27, Axial	DO-201AD, Axial	DO-201AA, DO-27, Axial
Operating Temperature - Junction	-55 to 175 °C	-55 to 175 °C	-55 to 150 °C	-65 to 150 °C	-65 to 150 °C	-65 to 125 °C
Product Status	Active	Active	Active	Not For New Designs	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Equivalent: The 1N5626-TAP is the direct parametric equivalent to the BYW84-TAP. Both parts are manufactured by Vishay, utilize avalanche technology, and maintain identical electrical specifications including voltage, current, forward voltage, and recovery time. The 1N5626-TAP differs only in packaging format (Cut Tape versus Tape & Box). This part is classified as Active product status and is suitable for new designs. Selection of 1N5626-TAP is appropriate when Cut Tape packaging is compatible with manufacturing processes.

Active Status Alternatives: The 1N5406G (Taiwan Semiconductor) and MR856G (onsemi) are both classified as Active product status. These standard recovery diodes meet the 600 V and 3 A core requirements. The 1N5406G operates within the original temperature range (-55 to 150 °C) and maintains lower capacitance (25 pF). The MR856G provides fast recovery characteristics (300 ns) with a slightly higher forward voltage (1.25 V) and operates to 125 °C maximum junction temperature.

Obsolescence Considerations: The 1N5406RLG (onsemi) and EGP30J (onsemi) are designated as Not For New Designs. These parts remain available in inventory but should not be selected for new product development. The 1N5406RLG exhibits higher reverse leakage (10 µA) compared to the original specification. The EGP30J features significantly higher forward voltage (1.7 V) and fast recovery characteristics (75 ns), which may alter circuit performance in applications sensitive to these parameters.

Compliance and Certification: All substitute parts maintain ROHS3 compliance and REACH Unaffected status, consistent with the original BYW84-TAP. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can the 1N5626-TAP be used as a direct replacement for the BYW84-TAP?

A: Yes. The 1N5626-TAP is a parametric equivalent with identical voltage (600 V), current (3 A), forward voltage (1 V @ 3 A), and recovery time (7.5 µs) specifications. Both parts utilize avalanche technology and are manufactured by Vishay. The primary difference is packaging format: 1N5626-TAP uses Cut Tape while BYW84-TAP uses Tape & Box. Both are Active product status and suitable for new designs.

Q: What is the difference between avalanche and standard recovery diodes in this comparison?

A: The BYW84-TAP and 1N5626-TAP utilize avalanche technology with 7.5 µs recovery time. The 1N5406G, 1N5406RLG, EGP30J, and MR856G are standard or fast recovery diodes. Avalanche diodes are optimized for overvoltage protection and transient suppression. Standard recovery diodes are general-purpose rectifiers. The EGP30J and MR856G feature fast recovery (75 ns and 300 ns respectively), which reduces switching losses in high-frequency applications but may not be necessary for all circuit topologies.

Q: Are there temperature range differences between substitute parts?

A: Yes. The BYW84-TAP and 1N5626-TAP operate from -55 to 175 °C junction temperature. The 1N5406G operates to 150 °C maximum. The 1N5406RLG, EGP30J, and MR856G operate to 150 °C, 150 °C, and 125 °C respectively. Applications requiring operation above 150 °C must use the BYW84-TAP or 1N5626-TAP.

Q: What is the significance of reverse leakage current differences?

A: The BYW84-TAP specifies 1 µA reverse leakage at 600 V, the lowest among all listed parts. The 1N5626-TAP specifies 1 µA but measured at 200 V. The 1N5406G and EGP30J specify 5 µA at 600 V. The 1N5406RLG and MR856G specify 10 µA at 600 V. Higher reverse leakage increases standby current consumption and heat dissipation. Applications with strict leakage requirements should prioritize the BYW84-TAP or 1N5626-TAP.

Q: Can I use the 1N5406RLG or EGP30J in new product designs?

A: Both parts are designated as Not For New Designs by their manufacturers. While these parts remain available in inventory, design practices recommend selecting Active status alternatives such as 1N5406G or MR856G for new development. Existing products currently using these parts may continue to source them during their available inventory period.

Q: How do forward voltage differences affect circuit performance?

A: The BYW84-TAP, 1N5626-TAP, and 1N5406G specify 1 V forward voltage at 3 A. The MR856G specifies 1.25 V, and the EGP30J specifies 1.7 V. Higher forward voltage increases power dissipation and heat generation. In rectifier circuits, this difference translates directly to increased voltage drop across the diode. Applications with tight voltage budgets or high current density should maintain forward voltage specifications within 0.25 V of the original design.

Q: What packaging considerations apply to these substitutes?

A: The BYW84-TAP uses SOD-64 axial packaging. The 1N5626-TAP also uses SOD-64 axial packaging. The 1N5406G uses DO-201AD axial packaging. The 1N5406RLG and MR856G use DO-201AA or DO-27 axial packaging. All parts are through-hole components with axial lead configuration. Physical dimensions and lead spacing may differ between package types; verify PCB footprint compatibility before substitution.

Q: Which substitute part has the best availability?

A: The EGP30J has the highest inventory level at 300,400 pieces. The 1N5626-TAP has 39,438 pieces. The 1N5406RLG has 16,765 pieces. The BYW84-TAP has 32,038 pieces. The 1N5406G has 2,400 pieces. The MR856G has 3,200 pieces. Inventory levels are subject to change; verify current availability with suppliers for production planning.

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