BYW82-TR Equivalent & Substitute Parts

Part Overview

The BYW82-TR is an avalanche diode rated for 200 V DC reverse voltage and 3 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This component is packaged in SOD-64 axial configuration and is designed for through-hole mounting applications. The part is currently Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts become necessary when the BYW82-TR experiences supply constraints, extended lead times, or when design flexibility permits selection from equivalent alternatives that meet identical electrical and mechanical specifications. The substitute parts listed maintain the same voltage and current ratings while offering equivalent performance characteristics within the specified operating temperature range.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	V
Reverse Recovery Time (trr)	7.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Capacitance @ Vr, F	60	pF @ 4V, 1MHz
Operating Temperature - Junction	-55 to 175	°C
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Technology	Avalanche	-

Substitute Part Grouping Explanation

Substitution eligibility for the BYW82-TR is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Mounting Type: Through Hole
Speed Classification: Standard Recovery >500ns, > 200mA (Io)
RoHS3 Compliance: Required
REACH Status: Unaffected

Substitute Parts Identified:

Parametric Equivalent (Identical Specifications):

1N5624-TR (Vishay General Semiconductor - Diodes Division): Exact electrical and mechanical match with SOD-64 packaging

Manufacturer Recommended Alternatives (Functional Equivalents):

1N5402-G (Comchip Technology): 200 V, 3 A, DO-27 package, Standard technology
1N5402G (Taiwan Semiconductor Corporation): 200 V, 3 A, DO-201AD package, Standard technology
1N5402RLG (onsemi): 200 V, 3 A, DO-201AA/DO-27 package, Standard technology, Not For New Designs status
EGP30D (onsemi): 200 V, 3 A, DO-201AD package, Standard technology, Not For New Designs status

All substitute parts maintain the 200 V reverse voltage and 3 A current ratings. Package variations exist between SOD-64 (original), DO-27, and DO-201AD configurations, all of which are axial through-hole formats compatible with standard PCB layouts.

Parameter Comparison

Parameter	BYW82-TR	1N5624-TR	1N5402-G	1N5402G	1N5402RLG	EGP30D
Manufacturer	Vishay	Vishay	Comchip	Taiwan Semi	onsemi	onsemi
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	950 mV @ 3 A
Speed Classification	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Fast Recovery ≤500ns
Reverse Recovery Time (trr)	7.5 µs	7.5 µs	-	-	-	50 ns
Current - Reverse Leakage @ Vr	1 µA @ 200 V	1 µA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	10 µA @ 200 V	5 µA @ 200 V
Capacitance @ Vr, F	60 pF @ 4V, 1MHz	60 pF @ 4V, 1MHz	-	25 pF @ 4V, 1MHz	-	95 pF @ 4V, 1MHz
Operating Temperature - Junction	-55 to 175°C	-55 to 175°C	-65 to 125°C	-55 to 150°C	-65 to 150°C	-65 to 150°C
Package / Case	SOD-64, Axial	SOD-64, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AA/DO-27, Axial	DO-201AD, Axial
Technology	Avalanche	Avalanche	Standard	Standard	Standard	Standard
Product Status	Active	Active	Active	Active	Not For New Designs	Not For New Designs
RoHS3 Compliance	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Engineering Selection Recommendations

Primary Selection (Parametric Equivalent):

The 1N5624-TR is the direct parametric equivalent to the BYW82-TR. Both components are manufactured by Vishay General Semiconductor - Diodes Division, share identical electrical specifications including 200 V reverse voltage, 3 A current rating, 7.5 µs reverse recovery time, and 60 pF capacitance. Both are packaged in SOD-64 axial configuration and maintain Active product status. This part is suitable for direct substitution without circuit redesign.

Secondary Selection (Manufacturer Recommended Alternatives):

The 1N5402-G (Comchip Technology) and 1N5402G (Taiwan Semiconductor Corporation) are manufacturer-recommended alternatives that meet the core voltage and current requirements. Both maintain 200 V reverse voltage and 3 A current ratings with standard recovery characteristics. These parts differ in package format (DO-201AD instead of SOD-64) and operating temperature range. The 1N5402G offers a wider operating temperature range (-55 to 150°C) compared to 1N5402-G (-65 to 125°C). Both are Active products and RoHS3 compliant.

Tertiary Selection (Legacy Alternatives):

The 1N5402RLG (onsemi) and EGP30D (onsemi) are classified as Not For New Designs. These parts maintain voltage and current equivalence but should not be selected for new circuit designs. The 1N5402RLG carries higher reverse leakage current (10 µA versus 1 µA for the original). The EGP30D features fast recovery characteristics (50 ns trr) and lower forward voltage (950 mV), which may alter circuit behavior in applications sensitive to recovery time or forward voltage drop.

Compliance and Regulatory Status:

All substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the original BYW82-TR. Moisture Sensitivity Level is 1 (Unlimited) for all active alternatives, indicating no special handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can the 1N5624-TR be used as a direct replacement for the BYW82-TR?

A: Yes. The 1N5624-TR is a parametric equivalent with identical electrical specifications (200 V, 3 A, 7.5 µs reverse recovery time, 60 pF capacitance) and identical SOD-64 axial packaging. No circuit modifications are required.

Q: What is the difference between the BYW82-TR and the 1N5402G?

A: Both parts meet the 200 V reverse voltage and 3 A current requirements. The primary differences are: (1) Package format—BYW82-TR uses SOD-64 while 1N5402G uses DO-201AD, both axial through-hole; (2) Technology—BYW82-TR is avalanche technology while 1N5402G is standard technology; (3) Operating temperature range—BYW82-TR operates -55 to 175°C while 1N5402G operates -55 to 150°C; (4) Reverse recovery time—BYW82-TR specifies 7.5 µs while 1N5402G does not specify this parameter. Package differences require PCB layout verification for mechanical fit.

Q: Why are some substitute parts marked "Not For New Designs"?

A: Parts marked "Not For New Designs" (1N5402RLG and EGP30D) are legacy components that manufacturers continue to support for existing applications but do not recommend for new circuit development. These parts may have limited future availability or may be superseded by newer alternatives. For new designs, select from Active status parts: BYW82-TR, 1N5624-TR, 1N5402-G, or 1N5402G.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH Unaffected, matching the regulatory status of the original BYW82-TR.

Q: What is the significance of the different package formats (SOD-64, DO-27, DO-201AD)?

A: All three package formats are axial through-hole configurations suitable for PCB mounting. SOD-64 and DO-201AD are physically similar but may have different lead spacing or body dimensions. DO-27 is an older designation equivalent to DO-201AA. Before substituting parts with different package codes, verify mechanical compatibility with the PCB footprint and lead spacing requirements.

Q: How do the reverse leakage current specifications differ among substitutes?

A: The BYW82-TR specifies 1 µA reverse leakage at 200 V. The 1N5402-G and 1N5402G specify 5 µA, while the 1N5402RLG specifies 10 µA. Higher reverse leakage current may affect circuit performance in high-impedance applications or precision analog circuits. For applications sensitive to leakage current, the BYW82-TR or 1N5624-TR are preferred.

Q: What does "Standard Recovery >500ns" mean?

A: This specification indicates the diode's reverse recovery time classification. Standard recovery diodes have reverse recovery times exceeding 500 nanoseconds. The BYW82-TR and 1N5624-TR specify 7.5 µs (7500 ns), confirming standard recovery classification. The EGP30D features fast recovery (≤500ns, 50 ns specified), which is faster but may introduce different switching characteristics in the circuit.

Q: Can the EGP30D be substituted for the BYW82-TR despite its fast recovery characteristics?

A: The EGP30D meets the voltage and current requirements but differs in recovery speed (50 ns versus 7.5 µs) and forward voltage (950 mV versus 1 V). These differences may alter circuit timing and power dissipation. The EGP30D is also marked "Not For New Designs." Substitution is not recommended without circuit analysis and testing to confirm compatibility with the application's switching and thermal requirements.

Q: What is the operating temperature range significance?

A: The BYW82-TR operates from -55 to 175°C junction temperature, providing the widest range among substitutes. The 1N5624-TR matches this range. Other alternatives operate within narrower ranges: 1N5402-G (-65 to 125°C), 1N5402G (-55 to 150°C), 1N5402RLG (-65 to 150°C), and EGP30D (-65 to 150°C). For applications requiring operation above 150°C, only the BYW82-TR or 1N5624-TR are suitable.

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