BYW77P-200 Equivalent & Substitute Parts

Part Overview

The BYW77P-200 is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 200 V DC reverse voltage and 25 A average rectified current in a SOD-93-2 through-hole package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. Substitute parts must maintain electrical performance within the specified voltage and current parameters while accommodating different package configurations.

Substiute Parts

BYW77P-200
STMicroelectronicsIn Stock: 2476BYW77P-200 Datasheet
BYW77P-200
Current Part
FEP30DP-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 18176FEP30DP-E3/45 Datasheet
FEP30DP-E3/45
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 25 A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 40 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 25 µA @ 200 V
Mounting Type Through Hole
Package / Case SOD-93-2
Operating Temperature - Junction -40 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BYW77P-200 is determined by the following critical electrical parameters:

  • Voltage Rating: Substitute parts must support a minimum DC reverse voltage (Vr) of 200 V
  • Current Capacity: Substitute parts must support the required average rectified current (Io) for the application
  • Recovery Characteristics: Substitute parts must maintain fast recovery speed classification (≤ 500ns, > 200mA)
  • Mounting Configuration: Substitute parts must be through-hole mounted to maintain PCB compatibility
  • Compliance Standards: Substitute parts must maintain ROHS3 compliance and REACH unaffected status

The FEP30DP-E3/45 qualifies as a substitute based on matching voltage rating (200 V), fast recovery speed classification, through-hole mounting, and equivalent compliance certifications. The FEP30DP-E3/45 is configured as a diode array with 1 pair common cathode, requiring circuit-level evaluation for application compatibility. Current capacity per diode element (15 A) differs from the main part specification and must be assessed against application requirements.

Parameter Comparison

Parameter BYW77P-200 FEP30DP-E3/45 Unit
Manufacturer STMicroelectronics Vishay General Semiconductor - Diodes Division
Product Status Obsolete Active
Voltage - DC Reverse (Vr) (Max) 200 200 V
Current - Average Rectified (Io) 25 15 (per diode) A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 40 A 950 mV @ 15 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 35 ns
Current - Reverse Leakage @ Vr 25 10 µA @ 200 V
Operating Temperature - Junction -40 to 150 -55 to 150 °C
Mounting Type Through Hole Through Hole
Package / Case SOD-93-2 TO-3P-3, SC-65-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The FEP30DP-E3/45 is an active product from Vishay General Semiconductor - Diodes Division and maintains ROHS3 compliance and REACH unaffected status equivalent to the BYW77P-200. Both components support 200 V DC reverse voltage operation and fast recovery speed classification.

Selection of the FEP30DP-E3/45 requires evaluation of the following factors:

  • Configuration Difference: The FEP30DP-E3/45 is a diode array with 1 pair common cathode configuration, whereas the BYW77P-200 is a single diode. Circuit topology must accommodate this structural difference.
  • Current Rating Variance: The FEP30DP-E3/45 provides 15 A per diode element, compared to 25 A for the BYW77P-200. Application current requirements must not exceed 15 A per diode element.
  • Package Footprint: The TO-3P-3 (SC-65-3) package differs from SOD-93-2, requiring PCB layout modification and thermal management reassessment.
  • Temperature Operating Range: The FEP30DP-E3/45 extends the lower operating temperature to -55°C, providing broader environmental compatibility.
  • Reverse Recovery Time: The FEP30DP-E3/45 exhibits 35 ns reverse recovery time, superior to the 50 ns specification of the BYW77P-200.

Frequently Asked Questions (FAQ)

Q: Can the FEP30DP-E3/45 directly replace the BYW77P-200 in existing PCB designs?

A: Direct PCB replacement is not possible due to package differences. The BYW77P-200 uses SOD-93-2 through-hole package, while the FEP30DP-E3/45 uses TO-3P-3 (SC-65-3) through-hole package. PCB layout modification is required, including hole repositioning and trace routing adjustments.

Q: What is the significance of the diode array configuration in the FEP30DP-E3/45?

A: The FEP30DP-E3/45 contains 1 pair of diodes with common cathode configuration. This structure requires circuit-level compatibility assessment. Applications utilizing single diode functionality must confirm that the array configuration does not introduce unintended current paths or voltage distribution issues.

Q: How does the 15 A current rating of the FEP30DP-E3/45 compare to the 25 A rating of the BYW77P-200?

A: The FEP30DP-E3/45 provides 15 A average rectified current per diode element, while the BYW77P-200 provides 25 A. Applications requiring current levels between 15 A and 25 A cannot use the FEP30DP-E3/45 as a direct substitute. Parallel diode configurations or alternative components must be evaluated.

Q: Are both components suitable for the same voltage applications?

A: Yes. Both the BYW77P-200 and FEP30DP-E3/45 support 200 V DC reverse voltage operation and are classified as fast recovery diodes. Voltage compatibility is established across both components.

Q: What compliance certifications apply to both components?

A: Both components are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (Unlimited) for both parts, indicating no moisture-related handling restrictions during storage or assembly.

Q: Does the FEP30DP-E3/45 offer any performance advantages over the BYW77P-200?

A: The FEP30DP-E3/45 exhibits lower reverse recovery time (35 ns versus 50 ns) and lower reverse leakage current (10 µA versus 25 µA at 200 V). The extended lower operating temperature limit (-55°C versus -40°C) provides broader environmental compatibility. These characteristics may benefit applications with stringent switching speed or leakage current requirements.

Q: What thermal considerations apply when substituting the FEP30DP-E3/45 for the BYW77P-200?

A: Package geometry differences between SOD-93-2 and TO-3P-3 (SC-65-3) affect thermal dissipation characteristics. The TO-3P-3 package provides different thermal coupling to the PCB. Thermal analysis specific to the application circuit and PCB layout is required to confirm adequate heat dissipation at the specified current levels.

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