BYW74TAP Equivalent & Substitute Parts

Part Overview

The BYW74TAP is an avalanche diode rated for 400 V DC reverse voltage and 3 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component features fast recovery characteristics with a reverse recovery time of 200 ns and operates across a junction temperature range of -55°C to 175°C. The part is RoHS3 compliant and currently active in production with 751 units in stock.

Substitute parts are necessary when the BYW74TAP becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design revisions call for different thermal or recovery characteristics while maintaining core electrical specifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A	V
Reverse Recovery Time (trr)	200	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BYW74TAP is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): 400 V minimum
Current - Average Rectified (Io): 3 A minimum
Current - Reverse Leakage @ Vr: 5 µA or lower @ 400 V
Voltage - Forward (Vf) (Max) @ If: Must not exceed application circuit tolerance

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package / Case: Axial configuration (SOD-64, DO-27, DO-201AD, or DO-201AA)

Environmental & Compliance Requirements:

Operating Temperature - Junction: Must encompass or exceed -55°C to 175°C range
RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected

Recovery Characteristics:

Speed classification: Fast Recovery (≤500 ns) or Standard Recovery (>500 ns) based on circuit requirements
Reverse Recovery Time (trr): Application-dependent tolerance

All substitute parts listed maintain the 400 V / 3 A electrical specification and through-hole axial mounting configuration. Variations in forward voltage, recovery time, and temperature range are noted for circuit-specific evaluation.

Parameter Comparison

Parameter	BYW74TAP (Main)	1N5404-G	1N5404G	1N5404RLG	EGP30G
Manufacturer	Vishay	Comchip Technology	onsemi	onsemi	onsemi
Voltage - DC Reverse (Vr) (Max)	400 V	400 V	400 V	400 V	400 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A	950 mV @ 3 A	1 V @ 3 A	1 V @ 3 A	1.25 V @ 3 A
Speed Classification	Fast Recovery ≤500 ns	Standard Recovery >500 ns	Standard Recovery >500 ns	Standard Recovery >500 ns	Fast Recovery ≤500 ns
Reverse Recovery Time (trr)	200 ns	-	-	-	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 400 V	5 µA @ 400 V	10 µA @ 400 V	10 µA @ 400 V	5 µA @ 400 V
Package / Case	SOD-64, Axial	DO-201AD, Axial	DO-201AA, DO-27, Axial	DO-201AA, DO-27, Axial	DO-201AD, Axial
Operating Temperature - Junction	-55 to 175°C	-65 to 125°C	-65 to 150°C	-65 to 150°C	-65 to 150°C
Technology	Avalanche	Standard	Standard	Standard	Standard
Product Status	Active	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Packaging Format	Tape & Box (TB)	Cut Tape (CT)	Bulk	Cut Tape (CT)	Cut Tape (CT)
Inventory (Pcs)	751	208868	1352	16846	5966

Engineering Selection Recommendations

Primary Substitute: 1N5404-G (Comchip Technology)

The 1N5404-G is the recommended primary substitute. It maintains identical electrical specifications (400 V, 3 A) and reverse leakage current (5 µA @ 400 V). The forward voltage is lower at 950 mV versus 1.1 V, which reduces power dissipation. The part is Active in production status with substantial inventory (208,868 units). Operating temperature range of -65°C to 125°C covers most applications, though it does not extend to the upper 175°C limit of the BYW74TAP. Package compatibility is confirmed through DO-201AD axial configuration. RoHS3 compliance and REACH unaffected status match the main part.

Secondary Substitute: EGP30G (onsemi)

The EGP30G provides fast recovery characteristics (50 ns trr) superior to the BYW74TAP (200 ns trr), making it suitable for high-frequency switching applications. Electrical specifications are identical (400 V, 3 A, 5 µA leakage). Forward voltage is slightly higher at 1.25 V. Operating temperature range of -65°C to 150°C does not reach the upper 175°C limit. Product status is Not For New Designs; use only for legacy system maintenance or when fast recovery performance is specifically required. RoHS3 compliance and REACH status are confirmed.

Tertiary Substitutes: 1N5404G and 1N5404RLG (onsemi)

Both onsemi parts (1N5404G and 1N5404RLG) meet the 400 V / 3 A specification with standard recovery characteristics. Reverse leakage current is higher at 10 µA versus 5 µA. Both are marked Not For New Designs and should be used only when existing designs or legacy systems require compatibility. Operating temperature range extends to 150°C, below the BYW74TAP maximum. Inventory availability is moderate (1,352 and 16,846 units respectively).

Selection Criteria Summary:

For new designs, select 1N5404-G. For applications requiring fast recovery performance, select EGP30G. For legacy system support only, use 1N5404G or 1N5404RLG. All substitutes are RoHS3 compliant and REACH unaffected. Verify circuit tolerance for forward voltage variation and confirm operating temperature requirements do not exceed 150°C for all substitutes except the main part.

Frequently Asked Questions (FAQ)

Q: Can the 1N5404-G replace the BYW74TAP in all applications?

A: The 1N5404-G is electrically compatible for 400 V / 3 A applications. However, the operating temperature range differs: 1N5404-G operates to 125°C maximum, while BYW74TAP extends to 175°C. Verify that your circuit does not require operation above 125°C junction temperature. Forward voltage is lower (950 mV vs. 1.1 V), which reduces power dissipation and is generally beneficial.

Q: What is the difference between fast recovery and standard recovery diodes?

A: The BYW74TAP features fast recovery with 200 ns reverse recovery time (trr). Standard recovery substitutes (1N5404-G, 1N5404G, 1N5404RLG) have trr >500 ns. Fast recovery diodes switch off more quickly, reducing switching losses in high-frequency circuits. Standard recovery diodes are suitable for lower-frequency rectification. The EGP30G offers the fastest recovery at 50 ns trr.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitutes (1N5404-G, 1N5404G, 1N5404RLG, and EGP30G) are RoHS3 compliant and REACH unaffected, matching the BYW74TAP compliance status.

Q: What is the significance of the "Not For New Designs" product status?

A: Parts marked "Not For New Designs" (1N5404G, 1N5404RLG, EGP30G) are in mature or declining production phases. They remain available for existing designs and legacy system support but should not be selected for new product development. The 1N5404-G, marked Active, is the preferred choice for new designs.

Q: How do package differences affect substitution?

A: All substitutes use through-hole axial mounting (SOD-64, DO-27, DO-201AD, or DO-201AA packages). These are mechanically compatible for PCB insertion. Verify that your PCB layout accommodates the specific package dimensions, as SOD-64 and DO-27 variants have slightly different lead spacing and body length.

Q: Why does the 1N5404-G have lower forward voltage than the BYW74TAP?

A: Forward voltage variation (950 mV vs. 1.1 V) reflects differences in semiconductor technology and doping profiles between manufacturers. Lower forward voltage reduces power dissipation (P = Vf × I) and heat generation. This is advantageous in most applications. Verify that your circuit design does not depend on a specific forward voltage threshold.

Q: Can I use EGP30G in place of BYW74TAP for standard rectification?

A: Yes, electrically the EGP30G is compatible. However, the 50 ns reverse recovery time is significantly faster than required for standard rectification. The EGP30G is optimized for high-frequency switching applications. For standard rectification, 1N5404-G is the more appropriate choice. EGP30G selection should be based on specific circuit performance requirements, not as a general replacement.

Q: What is the reverse leakage current significance?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. The BYW74TAP and 1N5404-G both specify 5 µA @ 400 V, while 1N5404G and 1N5404RLG specify 10 µA. Lower leakage is preferable in precision analog circuits and high-impedance applications. For standard power rectification, the difference is negligible.

Q: Is the BYW74TAP avalanche technology important for substitution?

A: The BYW74TAP uses avalanche technology, while all substitutes use standard diode technology. Avalanche diodes are designed to conduct safely in reverse breakdown conditions. For standard rectification applications, standard diodes are fully compatible. If your circuit specifically requires avalanche breakdown protection, consult the application requirements before substituting.

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