BYW34-TAP Equivalent & Substitute Parts

Part Overview

The BYW34-TAP is an avalanche diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 400 V DC reverse voltage and 2 A average rectified current in a through-hole SOD-57 axial package. This component is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical performance parameters are met within the same voltage and current ratings, allowing for component interchangeability in circuit applications where package form factor permits mechanical accommodation.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max)	1.1	V @ 1 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	-
Reverse Recovery Time (trr)	200	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Mounting Type	Through Hole	-
Package / Case	SOD-57, Axial	-
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	-

Substitute Part Grouping Explanation

Substitution of the BYW34-TAP is determined by equivalence in the following critical electrical parameters: maximum DC reverse voltage (400 V), average rectified current (2 A), fast recovery speed classification (≤ 500ns), and through-hole axial mounting configuration. The EGP20G meets these core electrical requirements with identical voltage and current ratings. Both components operate within compatible temperature ranges and share the same ECCN and HTSUS classifications. Package form factor differences (SOD-57 versus DO-15) are mechanical considerations that must be evaluated for physical fit within the target application, but do not affect electrical substitutability when space permits accommodation.

Parameter Comparison

Parameter	BYW34-TAP	EGP20G	Unit
Manufacturer	Vishay General Semiconductor - Diodes Division	Fairchild Semiconductor	-
Voltage - DC Reverse (Vr) (Max)	400	400	V
Current - Average Rectified (Io)	2	2	A
Voltage - Forward (Vf) (Max)	1.1 @ 1 A	1.25 @ 2 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	-
Reverse Recovery Time (trr)	200	50	ns
Current - Reverse Leakage @ Vr	5 @ 400 V	5 @ 400 V	µA
Mounting Type	Through Hole	Through Hole	-
Package / Case	SOD-57, Axial	DO-204AC, DO-15, Axial	-
Operating Temperature - Junction	-55 to 175	-65 to 150	°C
Technology	Avalanche	Standard	-
Product Status	Active	Active	-
ECCN	EAR99	EAR99	-
HTSUS	8541.10.0080	8541.10.0080	-

Engineering Selection Recommendations

Both the BYW34-TAP and EGP20G are Active product status components with identical voltage and current ratings, making them electrically equivalent for 400 V, 2 A applications. The EGP20G exhibits superior reverse recovery time performance (50 ns versus 200 ns), which may provide advantages in high-frequency switching applications. The BYW34-TAP supports a higher maximum junction temperature (175°C versus 150°C), which may be required in thermally demanding environments. Both components are EAR99 classified and share the same HTSUS code, indicating equivalent regulatory and trade compliance status. Package form factor differences require physical verification for mechanical fit; the SOD-57 package is more compact than the DO-15 package. Selection between these parts should be based on available board space, thermal requirements, and switching frequency demands of the specific application circuit.

Frequently Asked Questions (FAQ)

Q: Can the EGP20G directly replace the BYW34-TAP in all applications?

A: Electrical substitution is valid for applications requiring 400 V, 2 A rectification with fast recovery characteristics. Physical package compatibility must be verified; the DO-15 package is larger than SOD-57 and may not fit in space-constrained layouts. Operating temperature range differences should be evaluated if the application approaches 150°C junction temperature.

Q: What is the significance of the different reverse recovery times?

A: The EGP20G reverse recovery time of 50 ns is faster than the BYW34-TAP at 200 ns. In high-frequency switching circuits, faster recovery reduces switching losses and electromagnetic interference. In low-frequency or DC rectification applications, this difference has negligible impact.

Q: Are there compliance or regulatory differences between these parts?

A: Both components share identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications. Both are Active product status. Regulatory and trade compliance are equivalent.

Q: How do the forward voltage specifications compare?

A: The BYW34-TAP specifies 1.1 V maximum forward voltage at 1 A, while the EGP20G specifies 1.25 V maximum at 2 A. The BYW34-TAP exhibits lower forward voltage drop at lower current levels. In applications where forward voltage drop significantly affects efficiency, circuit-level analysis is required.

Q: What is the difference between avalanche and standard diode technology?

A: The BYW34-TAP uses avalanche technology, while the EGP20G uses standard technology. Both are classified as fast recovery diodes. Avalanche diodes are designed to withstand reverse voltage breakdown without damage, providing additional protection in transient overvoltage conditions. Standard diodes do not have this capability.

Q: Can I use the EGP20G in applications requiring the full -55°C to 175°C temperature range?

A: The EGP20G maximum junction temperature is 150°C, which is 25°C lower than the BYW34-TAP. If the application requires operation above 150°C junction temperature, the EGP20G is not suitable. The BYW34-TAP must be used for full temperature range coverage.

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