BYW33-TR Equivalent & Substitute Parts

Part Overview

The BYW33-TR is an avalanche diode rated for 300 V DC reverse voltage and 2 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This component is packaged in SOD-57 axial configuration and features fast recovery characteristics with a reverse recovery time of 200 ns. The part is currently active in production status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining through-hole mounting compatibility and thermal operating requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	300	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	V
Reverse Recovery Time (trr)	200	ns
Current - Reverse Leakage @ Vr	5	µA @ 300 V
Mounting Type	Through Hole	-
Package / Case	SOD-57, Axial	-
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the BYW33-TR is determined by the following critical parameters:

Voltage Rating: Substitute must support minimum 300 V DC reverse voltage
Current Rating: Substitute must support minimum 2 A average rectified current
Mounting Configuration: Substitute must be through-hole axial package
Reverse Recovery Time: Substitute must support fast recovery characteristics (≤ 500 ns, > 200 mA)
Reverse Leakage Current: Substitute must not exceed 5 µA @ 300 V
Operating Temperature Range: Substitute must cover the required junction temperature range
Compliance Status: Substitute must maintain ROHS3 compliance and REACH unaffected status

The EGP20F meets these substitution criteria with equivalent voltage and current ratings, matching reverse leakage specifications, and fast recovery performance within the specified envelope.

Parameter Comparison

Parameter	BYW33-TR	EGP20F	Unit
Manufacturer	Vishay General Semiconductor - Diodes Division	Fairchild Semiconductor	-
Voltage - DC Reverse (Vr) (Max)	300	300	V
Current - Average Rectified (Io)	2	2	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	1.25 V @ 2 A	V
Speed	Fast Recovery ≤ 500 ns, > 200 mA	Fast Recovery ≤ 500 ns, > 200 mA	-
Reverse Recovery Time (trr)	200	50	ns
Current - Reverse Leakage @ Vr	5 µA @ 300 V	5 µA @ 300 V	µA
Mounting Type	Through Hole	Through Hole	-
Package / Case	SOD-57, Axial	DO-204AC, DO-15, Axial	-
Operating Temperature - Junction	-55 to 175	-65 to 150	°C
Technology	Avalanche	Standard	-
RoHS Status	ROHS3 Compliant	Not specified	-
REACH Status	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

BYW33-TR (Primary Selection)

The BYW33-TR is the specified component with active production status and full ROHS3 compliance certification. This part is suitable for applications requiring avalanche diode technology with the stated electrical and thermal specifications.

EGP20F (Substitute Selection)

The EGP20F is a manufacturer-recommended substitute that meets all critical electrical parameters: 300 V reverse voltage, 2 A average rectified current, 5 µA reverse leakage at 300 V, and fast recovery performance. The EGP20F maintains REACH unaffected status. The substitute operates within a slightly narrower temperature range (-65°C to 150°C versus -55°C to 175°C) and uses standard diode technology rather than avalanche technology. The EGP20F is packaged in DO-15 configuration rather than SOD-57, requiring mechanical board layout verification for axial lead spacing compatibility.

Both parts are through-hole axial diodes with equivalent electrical performance for the specified application parameters.

Frequently Asked Questions (FAQ)

Q: Can the EGP20F directly replace the BYW33-TR in all applications?

A: The EGP20F meets all critical electrical specifications (voltage, current, leakage, and recovery time). However, the package differs (DO-15 versus SOD-57), requiring verification of board layout and lead spacing. The operating temperature range is narrower (-65°C to 150°C versus -55°C to 175°C), which must be evaluated against application requirements.

Q: What is the difference between avalanche and standard diode technology in this comparison?

A: The BYW33-TR uses avalanche technology while the EGP20F uses standard technology. Both achieve the specified electrical performance parameters. Technology selection depends on application-specific requirements not provided in the parameter set.

Q: Are there compliance differences between these parts?

A: Both parts maintain REACH unaffected status. The BYW33-TR carries explicit ROHS3 compliance certification. The EGP20F compliance status is not specified in the provided data.

Q: What is the significance of the reverse recovery time difference (200 ns versus 50 ns)?

A: Both parts meet the fast recovery specification (≤ 500 ns, > 200 mA). The EGP20F exhibits faster recovery characteristics, which may provide performance advantages in high-frequency switching applications but does not affect substitution eligibility based on the specified parameters.

Q: How do the forward voltage specifications compare?

A: The BYW33-TR specifies 1.1 V maximum at 1 A, while the EGP20F specifies 1.25 V maximum at 2 A. Both values are within acceptable ranges for general-purpose rectification applications. The measurement conditions differ, reflecting different test points in the diode characteristic curve.

Q: What packaging considerations apply to substitution?

A: The BYW33-TR uses SOD-57 axial packaging while the EGP20F uses DO-15 axial packaging. Both are through-hole axial configurations, but lead diameter and spacing may differ. Physical board layout verification is required before substitution.

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