BYVB32-200HE3_A/I Equivalent & Substitute Parts

Part Overview

The BYVB32-200HE3_A/I is a general-purpose diode array manufactured by Vishay General Semiconductor - Diodes Division. This component features a 1 Pair Common Cathode configuration rated for 200 V DC reverse voltage and 18 A average rectified current per diode. The device is housed in a TO-263-3 D2PAK surface mount package with automotive-grade qualification (AEC-Q101) and ROHS3 compliance.

The BYVB32-200HE3_A/I is designated as Last Time Buy, indicating discontinued production. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io) (per Diode)	18 A
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 20 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	25 ns
Current - Reverse Leakage @ Vr	10 µA @ 200 V
Operating Temperature - Junction	-65°C ~ 150°C
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Grade	Automotive
Qualification	AEC-Q101
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BYVB32-200HE3_A/I is determined by the following critical parameters:

Mandatory Matching Parameters:

Diode Configuration: 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max): 200 V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount

Current Rating Consideration: The BYVB32-200HE3_A/I is rated for 18 A average rectified current per diode. Substitute parts are grouped by current rating capability:

Full Equivalents (18-20 A): Parts rated for 18 A or higher current capacity
Reduced Current Substitutes (10 A): Parts rated for 10 A current capacity
Reduced Current Substitutes (8 A): Parts rated for 8 A current capacity
Reduced Current Substitutes (5 A): Parts rated for 5 A current capacity

Technology Variants:

Standard Technology: Maintains original diode technology
Super Barrier Technology: Alternative technology with different forward voltage and leakage characteristics

Product Status Consideration: Active status parts are preferred for new designs. Last Time Buy status indicates limited availability.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (per Diode)	Vf (Max) @ If	trr (ns)	Ir @ Vr	Tj (°C)	Technology	Product Status	Package
BYVB32-200HE3_A/I	Vishay	200 V	18 A	1.15 V @ 20 A	25	10 µA @ 200 V	-65 to 150	Standard	Last Time Buy	TO-263AB
BYVB32-200HM3/I	Vishay	200 V	18 A	1.15 V @ 20 A	25	10 µA @ 200 V	-65 to 150	Standard	Active	TO-263AB
BYVB32-200-E3/81	Vishay	200 V	18 A	1.15 V @ 20 A	25	10 µA @ 200 V	-65 to 150	Standard	Last Time Buy	TO-263AB
SBR40U200CTB-13	Diodes Incorporated	200 V	20 A	930 mV @ 20 A	50	200 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
SBR40U200CTB	Diodes Incorporated	200 V	20 A	930 mV @ 20 A	50	200 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
SBR20A200CTB-13	Diodes Incorporated	200 V	10 A	960 mV @ 20 A	30	100 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
SBR20A200CTB	Diodes Incorporated	200 V	10 A	960 mV @ 20 A	30	100 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
SBR10200CTB-13-G	Diodes Incorporated	200 V	5 A	920 mV @ 5 A	20	5 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
SBR10200CTB	Diodes Incorporated	200 V	5 A	920 mV @ 5 A	20	5 µA @ 200 V	-65 to 175	Super Barrier	Active	TO-263AB
FFB20UP20DN-F085	onsemi	200 V	10 A	1.15 V @ 10 A	40	10 µA @ 200 V	-55 to 175	Standard	Active	TO-263
MURB1620CTT4G	onsemi	200 V	8 A	975 mV @ 8 A	35	5 µA @ 200 V	-65 to 175	Standard	Active	TO-263AB

Engineering Selection Recommendations

Primary Equivalent (Recommended for Direct Replacement):

BYVB32-200HM3/I is the manufacturer-recommended equivalent. This part maintains identical electrical specifications to the BYVB32-200HE3_A/I, including 18 A current rating, 200 V reverse voltage, 25 ns reverse recovery time, and 1.15 V forward voltage. The primary distinction is Active product status, ensuring continued availability. Both parts are Vishay products with identical technology and thermal characteristics (-65°C to 150°C junction temperature range). This part is suitable for direct substitution without circuit redesign.

Parametric Equivalent (Alternative Packaging):

BYVB32-200-E3/81 provides identical electrical performance to the main part but is supplied in Cut Tape (CT) packaging instead of Tape & Reel (TR). This part maintains the same 18 A current rating, 200 V voltage rating, and 25 ns reverse recovery time. Product status is Last Time Buy, indicating limited future availability. This part is suitable for applications where packaging format is not a constraint.

Higher Current Capability Substitutes:

SBR40U200CTB and SBR40U200CTB-13 (Diodes Incorporated) are rated for 20 A average rectified current, exceeding the 18 A rating of the main part. Both parts maintain 200 V reverse voltage and TO-263AB package compatibility. These parts employ Super Barrier technology, resulting in lower forward voltage (930 mV @ 20 A) compared to the main part (1.15 V @ 20 A). Reverse recovery time is 50 ns, longer than the main part's 25 ns. Operating temperature range extends to 175°C. Both parts carry Active product status. The -13 variant is supplied in Tape & Reel packaging; the non-suffixed variant is supplied in Tube packaging.

Reduced Current Substitutes (10 A Rating):

SBR20A200CTB and SBR20A200CTB-13 (Diodes Incorporated) are rated for 10 A average rectified current. Both maintain 200 V reverse voltage and TO-263AB package compatibility. Super Barrier technology provides 960 mV forward voltage @ 20 A and 30 ns reverse recovery time. Operating temperature range extends to 175°C. Both parts carry Active product status. The -13 variant is supplied in Tape & Reel packaging; the non-suffixed variant is supplied in Tube packaging.

FFB20UP20DN-F085 (onsemi) is rated for 10 A average rectified current with 200 V reverse voltage. This part uses Standard technology with 1.15 V forward voltage @ 10 A and 40 ns reverse recovery time. Operating temperature range is -55°C to 175°C. Product status is Active. Package designation is TO-263 (D2PAK).

MURB1620CTT4G (onsemi) is rated for 8 A average rectified current with 200 V reverse voltage. This part uses Standard technology with 975 mV forward voltage @ 8 A and 35 ns reverse recovery time. Operating temperature range is -65°C to 175°C. Product status is Active. Package is TO-263AB (D2PAK).

Reduced Current Substitutes (5 A Rating):

SBR10200CTB and SBR10200CTB-13-G (Diodes Incorporated) are rated for 5 A average rectified current. Both maintain 200 V reverse voltage and TO-263AB package compatibility. Super Barrier technology provides 920 mV forward voltage @ 5 A and 20 ns reverse recovery time. Operating temperature range extends to 175°C. Both parts carry Active product status. The -13-G variant is supplied in Tape & Reel packaging; the non-suffixed variant is supplied in Tube packaging.

Compliance and Certification:

All substitute parts listed maintain ROHS3 compliance and AEC-Q101 automotive qualification where specified in the original data. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity constraints.

Frequently Asked Questions (FAQ)

Q: Can BYVB32-200HM3/I be used as a direct replacement for BYVB32-200HE3_A/I?

A: Yes. BYVB32-200HM3/I is the manufacturer-recommended equivalent with identical electrical specifications. The only difference is Active product status versus Last Time Buy status of the original part. No circuit modifications are required.

Q: What is the difference between the -13 suffix variants and non-suffixed variants in the Diodes Incorporated product line?

A: The -13 suffix indicates Tape & Reel (TR) packaging format. Non-suffixed variants are supplied in Tube packaging. Electrical specifications are identical between the two packaging formats for the same base part number.

Q: Can SBR40U200CTB-13 replace BYVB32-200HE3_A/I in all applications?

A: SBR40U200CTB-13 maintains the same 200 V reverse voltage rating and TO-263AB package. However, it is rated for 20 A current (versus 18 A), has lower forward voltage (930 mV versus 1.15 V), longer reverse recovery time (50 ns versus 25 ns), and higher reverse leakage current (200 µA versus 10 µA). These differences may affect circuit performance in applications sensitive to forward voltage drop, switching speed, or leakage current. Verification against circuit requirements is necessary.

Q: What is the significance of Super Barrier technology in the SBR series parts?

A: Super Barrier technology is a diode technology variant that typically provides lower forward voltage drop compared to Standard technology. In the substitute parts listed, SBR series components show forward voltage reductions of approximately 150-230 mV compared to Standard technology parts at equivalent current levels. This results in lower power dissipation but may require circuit verification if forward voltage is a critical design parameter.

Q: Are all substitute parts automotive-grade?

A: Not all substitute parts carry explicit automotive grade designation in the provided data. BYVB32-200HE3_A/I, BYVB32-200HM3/I, and FFB20UP20DN-F085 are designated as Automotive grade with AEC-Q101 qualification. Other substitute parts do not have automotive grade designation in the provided specifications. For automotive applications, parts with explicit automotive qualification should be prioritized.

Q: What is the impact of operating temperature range differences?

A: BYVB32-200HE3_A/I operates from -65°C to 150°C junction temperature. Most substitute parts extend the upper limit to 175°C. FFB20UP20DN-F085 has a lower minimum temperature of -55°C. For applications operating near the upper temperature limit of the original part (150°C), substitute parts with 175°C ratings provide additional thermal margin. For applications requiring operation below -55°C, FFB20UP20DN-F085 is not suitable.

Q: Can reduced current-rated parts (5 A, 8 A, 10 A) be used in place of the 18 A rated BYVB32-200HE3_A/I?

A: Reduced current-rated parts can only be used if the circuit design allows operation at the lower current rating. If the application requires sustained current above the substitute part's rating, thermal stress and component failure will result. Circuit analysis must confirm that maximum operating current does not exceed the substitute part's average rectified current specification.

Q: What packaging format considerations apply to these substitute parts?

A: All substitute parts use TO-263-3 D2PAK surface mount packages with identical mechanical dimensions and pin configurations. Tape & Reel (TR) packaging is suitable for automated assembly processes. Cut Tape (CT) and Tube packaging are suitable for manual assembly or lower-volume production. Packaging format selection depends on manufacturing process requirements, not electrical compatibility.

Q: How does reverse recovery time affect circuit performance?

A: Reverse recovery time (trr) affects switching speed and electromagnetic interference (EMI) characteristics. BYVB32-200HE3_A/I has 25 ns trr. Substitute parts range from 20 ns (SBR10200CTB series) to 50 ns (SBR40U200CTB series). Longer reverse recovery times may increase switching losses and EMI in high-frequency applications. Shorter reverse recovery times reduce these effects. Circuit verification is necessary if switching frequency is a critical design parameter.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) affects power dissipation and circuit performance in standby or low-current conditions. BYVB32-200HE3_A/I has 10 µA @ 200 V leakage. Substitute parts range from 5 µA to 200 µA. Higher leakage currents increase power dissipation and may affect precision analog circuits. Lower leakage currents reduce power dissipation. For applications sensitive to leakage current, parts with lower Ir specifications should be selected.

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