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BYVB32-100-E3/45 Equivalent & Substitute Parts
Part Overview
The BYVB32-100-E3/45 is a general-purpose diode array manufactured by Vishay General Semiconductor - Diodes Division. This component features a 1 Pair Common Cathode configuration rated for 100 V DC reverse voltage and 18 A average rectified current per diode. The device is packaged in a Surface Mount TO-263-3 (D2PAK) format with 2 leads plus tab.
The BYVB32-100-E3/45 is designated as Last Time Buy, indicating that the manufacturer has discontinued or will discontinue production. Equivalent and substitute parts are necessary to ensure continued design support, procurement availability, and long-term supply chain reliability for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) (per Diode) | 18 A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the BYVB32-100-E3/45 is determined by the following critical parameters:
Mandatory Compatibility Parameters:
- Diode Configuration: 1 Pair Common Cathode
- Voltage - DC Reverse (Vr) (Max): 100 V or higher
- Current - Average Rectified (Io) (per Diode): 18 A or higher
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB or compatible variant
Performance Parameters:
- Operating Temperature - Junction: -65°C ~ 150°C
- Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
- RoHS Status: ROHS3 Compliant
Substitute parts must meet or exceed the voltage and current ratings of the original component while maintaining the same diode configuration and package footprint. Forward voltage characteristics and reverse recovery time may vary within acceptable engineering tolerances for the application.
Parameter Comparison
| Parameter | BYVB32-100-E3/45 | BYVB32-200-M3/I | SBR30A100CTB-13 | SBR30A100CTB-13-G |
|---|---|---|---|---|
| Manufacturer | Vishay General Semiconductor | Vishay General Semiconductor | Diodes Incorporated | Diodes Incorporated |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 200 V | 100 V | 100 V |
| Current - Average Rectified (Io) (per Diode) | 18 A | 18 A | 15 A | 15 A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A | 1.15 V @ 20 A | 850 mV @ 15 A | 850 mV @ 15 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Standard Recovery >500ns, > 200mA |
| Reverse Recovery Time (trr) | 25 ns | 25 ns | Not specified | Not specified |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 200 V | 100 µA @ 100 V | 100 µA @ 100 V |
| Operating Temperature - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D2PAK, TO-263AB | TO-263-3, D2PAK, TO-263AB | TO-263-3, D2PAK, TO-263AB | TO-263-3, D2PAK, TO-263AB |
| Product Status | Last Time Buy | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | Not specified | ROHS3 Compliant | ROHS3 Compliant |
| Automotive Grade | Not specified | Yes (AEC-Q101) | Not specified | Yes (AEC-Q101) |
Engineering Selection Recommendations
BYVB32-200-M3/I (Vishay General Semiconductor)
This part is a direct manufacturer equivalent with enhanced voltage rating. The BYVB32-200-M3/I maintains identical current capacity (18 A), forward voltage characteristics (1.15 V @ 20 A), and recovery time (25 ns) while providing 200 V reverse voltage capability. The component is in Active product status and carries AEC-Q101 automotive qualification, ensuring continued availability and supply chain support. This substitute is suitable for applications where voltage margin improvement is acceptable or beneficial.
SBR30A100CTB-13 (Diodes Incorporated)
This part provides equivalent voltage and package specifications with a different diode technology (Super Barrier). The SBR30A100CTB-13 is rated for 15 A average rectified current, which is lower than the original 18 A specification. Forward voltage is reduced to 850 mV @ 15 A, offering improved efficiency characteristics. The component is in Active product status with ROHS3 compliance. This substitute is applicable for designs where the 15 A current rating meets application requirements and lower forward voltage is advantageous.
SBR30A100CTB-13-G (Diodes Incorporated)
This part is functionally equivalent to the SBR30A100CTB-13 with automotive-grade qualification (AEC-Q101). The primary distinction is the recovery speed classification (Standard Recovery >500ns versus Fast Recovery ≤ 500ns). This substitute is suitable for automotive applications requiring AEC-Q101 certification where standard recovery speed performance is acceptable. The component is in Active product status with ROHS3 compliance and high inventory availability.
Frequently Asked Questions (FAQ)
Q: Can the BYVB32-200-M3/I be used as a direct replacement for the BYVB32-100-E3/45?
A: Yes. The BYVB32-200-M3/I maintains the same diode configuration, current rating (18 A), forward voltage characteristics, and package format. The 200 V reverse voltage rating exceeds the original 100 V specification, providing additional voltage margin. No circuit modifications are required for substitution.
Q: What is the primary limitation of the SBR30A100CTB-13 as a substitute?
A: The SBR30A100CTB-13 is rated for 15 A average rectified current per diode, compared to the original 18 A specification. This substitute is applicable only for applications where the design current requirement does not exceed 15 A per diode. Forward voltage is lower (850 mV @ 15 A), which may provide efficiency benefits in current-limited applications.
Q: What is the difference between SBR30A100CTB-13 and SBR30A100CTB-13-G?
A: Both parts share identical electrical specifications and package format. The primary difference is recovery speed classification: SBR30A100CTB-13 features Fast Recovery (≤ 500ns), while SBR30A100CTB-13-G features Standard Recovery (>500ns). Additionally, SBR30A100CTB-13-G carries AEC-Q101 automotive qualification. Selection between these variants depends on application speed requirements and automotive certification needs.
Q: Are all substitute parts RoHS3 compliant?
A: The BYVB32-200-M3/I RoHS status is not specified in available documentation. The SBR30A100CTB-13 and SBR30A100CTB-13-G are both confirmed ROHS3 compliant. Verification of RoHS compliance status for the BYVB32-200-M3/I should be obtained from the manufacturer if this requirement is critical for your application.
Q: Do all substitute parts use the same package footprint?
A: Yes. All substitute parts utilize the TO-263-3 (D2PAK) package format with 2 leads plus tab. The BYVB32-200-M3/I and both SBR30 variants are mechanically and electrically compatible with the original TO-263AB footprint, allowing direct PCB substitution without layout modifications.
Q: Which substitute offers the best long-term availability?
A: The BYVB32-200-M3/I and both SBR30 variants are in Active product status, ensuring continued manufacturing and supply. The SBR30A100CTB-13-G demonstrates the highest inventory availability (55,523 pieces) among all options, providing the strongest supply chain position for high-volume or long-term production requirements.
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