BYT56K-TAP Equivalent & Substitute Parts

Part Overview

The BYT56K-TAP is an 800V, 3A avalanche diode manufactured by Vishay General Semiconductor - Diodes Division in SOD-64 axial through-hole packaging. This component is classified as Active and maintains full RoHS3 compliance with unlimited moisture sensitivity rating. Avalanche diodes are selected for applications requiring fast recovery characteristics and precise voltage regulation under transient conditions. Substitute parts become necessary when SOD-64 packaging is unavailable, when alternative recovery speed profiles are acceptable, or when sourcing from alternative manufacturers is required while maintaining electrical equivalence at the 800V, 3A rating.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) Maximum	800	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) Maximum @ If	1.4 V @ 3 A	V
Reverse Recovery Time (trr)	100	ns
Current - Reverse Leakage @ Vr	5	µA @ 800 V
Mounting Type	Through Hole	—
Package / Case	SOD-64, Axial	—
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BYT56K-TAP is determined by strict electrical equivalence across the following parameters: maximum reverse voltage (800V), average rectified current (3A), reverse leakage current (5µA @ 800V), and through-hole axial mounting configuration. The three qualified substitute parts—1N5407G, 1N5407RLG, and EGP30K—all meet or exceed the primary electrical requirements. However, substitution involves trade-offs in secondary characteristics:

Technology Transition: The BYT56K-TAP employs avalanche technology with fast recovery (≤500ns, trr=100ns). Substitutes 1N5407G and 1N5407RLG use standard recovery technology (>500ns), resulting in slower switching behavior. Substitute EGP30K maintains fast recovery characteristics (≤500ns, trr=75ns) while using standard diode technology.

Package Compatibility: The BYT56K-TAP uses SOD-64 packaging. Substitutes employ DO-201AD (1N5407G, EGP30K) or DO-201AA/DO-27 (1N5407RLG) packages. All are axial through-hole configurations with compatible PCB footprints for standard diode mounting.

Forward Voltage: The BYT56K-TAP specifies 1.4V @ 3A. Substitutes 1N5407G and 1N5407RLG specify 1.0V @ 3A, while EGP30K specifies 1.7V @ 3A. These variations remain within acceptable ranges for general-purpose rectification applications.

Temperature Range: The BYT56K-TAP operates from -55°C to 175°C. Substitutes operate from -55°C to 150°C (1N5407G, 1N5407RLG) or -65°C to 150°C (EGP30K), representing a reduced upper temperature limit of 25°C for standard technology parts.

Product Status: The BYT56K-TAP and 1N5407G, EGP30K are Active. The 1N5407RLG is marked "Not For New Designs," restricting its use to legacy system maintenance only.

Parameter Comparison

Parameter	BYT56K-TAP (Main)	1N5407G	1N5407RLG	EGP30K
Manufacturer	Vishay General Semiconductor	Taiwan Semiconductor Corporation	onsemi	Fairchild Semiconductor
Voltage - DC Reverse (Vr) Max	800 V	800 V	800 V	800 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) Max @ If	1.4 V @ 3 A	1.0 V @ 3 A	1.0 V @ 3 A	1.7 V @ 3 A
Speed Classification	Fast Recovery ≤500ns	Standard Recovery >500ns	Standard Recovery >500ns	Fast Recovery ≤500ns
Reverse Recovery Time (trr)	100 ns	—	—	75 ns
Current - Reverse Leakage @ Vr	5 µA @ 800 V	5 µA @ 800 V	10 µA @ 800 V	5 µA @ 800 V
Package / Case	SOD-64, Axial	DO-201AD, Axial	DO-201AA, DO-27, Axial	DO-201AD, Axial
Operating Temperature - Junction	-55 to 175°C	-55 to 150°C	-65 to 150°C	-65 to 150°C
Technology	Avalanche	Standard	Standard	Standard
Product Status	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active New Designs: Select either 1N5407G or EGP30K. Both maintain Active product status and full RoHS3 compliance. The 1N5407G offers lower forward voltage (1.0V) and standard recovery characteristics suitable for general rectification. The EGP30K provides fast recovery performance (trr=75ns) matching the BYT56K-TAP's switching speed profile, making it the preferred choice for applications sensitive to recovery time performance.

For Legacy System Maintenance: The 1N5407RLG is electrically qualified but carries "Not For New Designs" status. Use only when replacement of existing BYT56K-TAP units is required in fielded systems and no Active alternatives are available. This part exhibits higher reverse leakage (10µA vs. 5µA) and reduced upper temperature rating (-65 to 150°C).

Temperature Derating Consideration: All substitute parts reduce the maximum junction temperature from 175°C to 150°C. Applications operating near the upper thermal limit of the BYT56K-TAP require thermal analysis to confirm substitute part adequacy.

Recovery Speed Trade-off: Substitutes 1N5407G and 1N5407RLG employ standard recovery technology, extending reverse recovery time beyond the BYT56K-TAP's 100ns specification. Applications requiring fast transient suppression or high-frequency switching benefit from EGP30K selection to maintain fast recovery characteristics.

Frequently Asked Questions (FAQ)

Q: Can 1N5407G directly replace BYT56K-TAP in existing PCB designs?

A: Yes, with package footprint verification. Both are axial through-hole diodes with compatible lead spacing. The 1N5407G uses DO-201AD packaging versus the BYT56K-TAP's SOD-64, but both accommodate standard 0.3-inch lead spacing. Verify PCB hole diameter and spacing before substitution.

Q: What is the primary difference between 1N5407G and EGP30K substitutes?

A: The 1N5407G uses standard recovery technology (>500ns) with lower forward voltage (1.0V @ 3A), while EGP30K maintains fast recovery characteristics (trr=75ns) with higher forward voltage (1.7V @ 3A). Select EGP30K for applications requiring fast switching response; select 1N5407G for applications prioritizing low forward voltage drop.

Q: Why is 1N5407RLG marked "Not For New Designs"?

A: This designation indicates the part is in mature/legacy status and may face future discontinuation. Manufacturers recommend 1N5407G or equivalent Active alternatives for new product development. 1N5407RLG remains available for field replacement of existing systems.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All three substitute parts—1N5407G, 1N5407RLG, and EGP30K—carry ROHS3 Compliant certification, matching the BYT56K-TAP's environmental compliance status.

Q: Does the 25°C reduction in maximum junction temperature affect my application?

A: This depends on your thermal design. If the BYT56K-TAP operates below 150°C in your application, substitutes are thermally adequate. If your design relies on the 175°C rating, thermal analysis is required to confirm substitute part performance under worst-case conditions.

Q: What is the reverse leakage difference between 1N5407RLG and other substitutes?

A: The 1N5407RLG specifies 10µA @ 800V reverse leakage, double the BYT56K-TAP and other substitutes (5µA @ 800V). In high-impedance circuits or precision applications, this difference may be significant. Standard rectification applications are unaffected.

Q: Can I use EGP30K in Bulk packaging for production assembly?

A: Yes. EGP30K is supplied in Bulk packaging, suitable for automated pick-and-place assembly. The 1N5407G is supplied in Cut Tape (CT) packaging, also compatible with standard assembly equipment. Verify your assembly process requirements before selecting packaging format.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message