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BYT54G-TAP Equivalent & Substitute Parts Reference
Part Overview
The BYT54G-TAP from Vishay General Semiconductor - Diodes Division is an active diode in the Diodes, Rectifiers category, utilizing Avalanche technology. It is specified as a 400 V, 1.25 A diode with a SOD-57 through-hole package. Identifying alternative models is necessary to ensure design flexibility, continued availability, and supply security in production environments where the BYT54G-TAP may be in short supply or as part of preferred parts management.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Manufacturer | Category | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Mounting Type | Package / Case | Operating Temperature - Junction | Part Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYT54G-TAP | Vishay General Semiconductor - Diodes Division | Diodes, Rectifiers | 400 V | 1.25A | 1.5 V @ 1 A | Fast Recovery ≤500ns, >200mA (Io) | 100 ns | 5 µA @ 400 V | Through Hole | SOD-57, Axial | -55°C ~ 175°C | Active |
Substitute Part Grouping Explanation
Substitution logic is based strictly on compatibility in the following key parameters: maximum DC reverse voltage (Vr), average rectified current (Io), forward voltage (Vf) at specified current, recovery speed category and reverse recovery time (trr), reverse leakage current at Vr, mounting type, and package. All listed substitute diodes must meet or exceed the main part’s requirements for these parameters and be active in status.
Parameter Comparison
| Parameter | BYT54G-TAP | EGP10G |
|---|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor |
| Category | Diodes, Rectifiers | Diodes, Rectifiers |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V |
| Current - Average Rectified (Io) | 1.25A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A | 1.25 V @ 1 A |
| Speed | Fast Recovery ≤500ns, >200mA (Io) | Fast Recovery ≤500ns, >200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns | 50 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V | 5 µA @ 400 V |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | SOD-57, Axial | DO-204AL, DO-41, Axial |
| Operating Temperature - Junction | -55°C ~ 175°C | -65°C ~ 150°C |
| Part Status | Active | Active |
Engineering Selection Recommendations
Selection compatibility should be verified with product status as Active for both BYT54G-TAP and EGP10G. Both parts are RoHS compliant and characterized as not restricted by REACH. No additional technical selection criteria are introduced beyond these supplied compliance details.
Frequently Asked Questions (FAQ)
Q1: What key parameters must match to consider a diode rectifier as a substitute?
A1: Key parameters for substitution include voltage - DC reverse (Vr), current - average rectified (Io), voltage - forward (Vf) at rated current, speed and reverse recovery time (trr), reverse leakage current at Vr, mounting type, and package.
Q2: Are different package types acceptable for direct substitution in this category?
A2: Both the main and substitute parts are in axial, through-hole packages (SOD-57 vs DO-41). Mechanical compatibility should be reviewed based on these details.
Q3: Can substitute diodes have a lower average rectified current rating?
A3: All substitutes must be selected such that their current rating (Io) is equal to or higher than required. Review actual application requirements as they relate to the substitute's specifications.
Q4: What compliance statuses are associated with BYT54G-TAP and EGP10G?
A4: Both BYT54G-TAP and EGP10G are RoHS compliant and have no REACH restrictions according to supplied data.
Q5: Does the substitute part EGP10G match the reverse leakage and reverse recovery specifications?
A5: Both parts specify a maximum reverse leakage current of 5 µA at 400 V, and each falls within the fast recovery diode classification with stated reverse recovery times.
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