BYM36E-TAP Equivalent & Substitute Parts

Part Overview

The BYM36E-TAP is an avalanche diode rated for 1000 V DC reverse voltage with 2.9 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This through-hole SOD-64 axial component operates across a junction temperature range of -55°C to 175°C and features fast recovery characteristics with a reverse recovery time of 150 ns. The part is ROHS3 compliant and currently active in production with 1121 units in stock.

Equivalent and substitute parts are necessary when the BYM36E-TAP becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design revisions call for different electrical characteristics within acceptable operating parameters.

Key Parameters

Parameter	BYM36E-TAP Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	2.9	A
Voltage - Forward (Vf) (Max) @ If	1.78 @ 3	V @ A
Reverse Recovery Time (trr)	150	ns
Current - Reverse Leakage @ Vr	5	µA @ 1000 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	-
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Operating Temperature - Junction	-55 to 175	°C
Technology	Avalanche	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BYM36E-TAP is determined by the following critical parameters:

Voltage Rating Compatibility: The reverse voltage rating must equal or exceed 1000 V. Substitutes rated at 800 V (1N5407 series) operate at reduced voltage margin and are suitable only when circuit design permits lower voltage operation.

Current Rating: The average rectified current must support the 2.9 A requirement. All identified substitutes are rated at 3 A, providing adequate current capacity.

Recovery Characteristics: The BYM36E-TAP employs avalanche technology with fast recovery (150 ns trr). Standard recovery diodes (>500 ns) represent a functional trade-off, acceptable when circuit switching frequency and EMI requirements permit slower recovery.

Package and Mounting: Through-hole axial mounting is maintained across all substitutes. Package variants include SOD-64 (original), DO-27 (DO-201AD), and DO-201AA formats, all compatible with through-hole PCB assembly.

Temperature Range: The BYM36E-TAP operates to 175°C junction temperature. Substitutes operate to 125°C or 150°C maximum, representing a thermal derating consideration for high-temperature applications.

Compliance and Status: All substitutes maintain ROHS3 compliance and REACH unaffected status. Product status varies between Active and Not For New Designs, affecting long-term availability.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (A)	Vf @ 3A (V)	Technology	trr (ns)	Tj (°C)	Package	Status
BYM36E-TAP	Vishay	1000	2.9	1.78	Avalanche	150	-55 to 175	SOD-64	Active
1N5407-G	Comchip Technology	800	3	1.0	Standard	>500	-65 to 125	DO-27	Active
1N5407G	Taiwan Semiconductor	800	3	1.0	Standard	>500	-55 to 150	DO-201AD	Active
1N5407RLG	onsemi	800	3	1.0	Standard	>500	-65 to 150	DO-201AA	Not For New Designs
1N5408-G	Comchip Technology	1000	3	0.95	Standard	>500	-65 to 125	DO-27	Active
1N5408G	Taiwan Semiconductor	1000	3	1.0	Standard	>500	-55 to 150	DO-201AD	Active
1N5408GP-TP	Micro Commercial Co	1000	3	1.1	Standard	>500	-55 to 150	DO-201AD	Active
1N5408RLG	onsemi	1000	3	1.0	Standard	>500	-65 to 150	DO-201AA	Not For New Designs
EGP30K	Fairchild Semiconductor	800	3	1.7	Standard	75	-65 to 150	DO-201AD	Active

Engineering Selection Recommendations

Direct Voltage-Matched Substitutes (1000 V Rating):

The 1N5408 series (1N5408-G, 1N5408G, 1N5408GP-TP, 1N5408RLG) provides equivalent 1000 V reverse voltage rating to the BYM36E-TAP. These parts maintain full voltage margin for applications designed around the original specification. Among active parts, 1N5408G (Taiwan Semiconductor) offers the highest inventory (38,100 units) and standard operating temperature range of -55°C to 150°C. The 1N5408GP-TP variant from Micro Commercial Co provides an alternative with 2,792 units available. Parts marked "Not For New Designs" (1N5408RLG) remain available but should not be selected for new circuit designs due to product lifecycle status.

Reduced Voltage Substitutes (800 V Rating):

The 1N5407 series (1N5407-G, 1N5407G, 1N5407RLG) operates at 800 V maximum reverse voltage. These parts are suitable only when circuit design analysis confirms that 800 V voltage margin is acceptable. The 1N5407G from Taiwan Semiconductor provides 4,462 units in stock with -55°C to 150°C operating range. The 1N5407-G variant from Comchip Technology offers 883 units with -65°C to 125°C range. The onsemi 1N5407RLG is marked "Not For New Designs."

Technology Trade-off Consideration:

All identified substitutes employ standard recovery technology (>500 ns) compared to the BYM36E-TAP avalanche fast recovery (150 ns). This represents a functional trade-off acceptable in applications where switching frequency and EMI performance do not require fast recovery characteristics. The EGP30K from Fairchild Semiconductor provides fast recovery (75 ns trr) at 800 V rating with 5,092 units available, offering recovery performance closer to the original part.

Temperature Derating:

The BYM36E-TAP operates to 175°C junction temperature. Substitutes operate to maximum 150°C (most active parts) or 125°C (Comchip variants). Applications requiring operation above 150°C junction temperature cannot use identified substitutes.

Compliance and Lifecycle:

All parts maintain ROHS3 compliance and REACH unaffected status. Parts with Active product status are preferred for new designs. Parts marked "Not For New Designs" remain available for legacy system support and repair applications.

Frequently Asked Questions (FAQ)

Q: Can the 1N5407 series substitute for the BYM36E-TAP in all applications?

A: The 1N5407 series operates at 800 V maximum reverse voltage compared to the BYM36E-TAP 1000 V rating. Substitution is valid only when circuit design analysis confirms that 800 V voltage margin is sufficient for the application. Voltage derating analysis must be performed to ensure adequate safety margin under all operating conditions including transient overvoltage events.

Q: What is the primary difference between the BYM36E-TAP and 1N5408 series substitutes?

A: The BYM36E-TAP employs avalanche technology with fast recovery (150 ns reverse recovery time), while the 1N5408 series uses standard recovery technology (>500 ns). Both maintain 1000 V voltage rating and 3 A current capacity. The recovery time difference affects switching speed and EMI characteristics. Standard recovery is acceptable in applications where switching frequency permits slower diode turn-off.

Q: Are there package compatibility considerations when substituting the BYM36E-TAP?

A: The BYM36E-TAP uses SOD-64 axial package. Substitutes employ DO-27 (DO-201AD) or DO-201AA axial packages. All are through-hole axial components with compatible lead spacing and PCB footprints. Physical dimensions vary slightly; verification against PCB layout is recommended before implementation.

Q: Which substitute offers the best inventory availability?

A: The 1N5408G from Taiwan Semiconductor provides the highest inventory with 38,100 units in stock, combined with Active product status and -55°C to 150°C operating range. This part maintains the 1000 V voltage rating of the original BYM36E-TAP.

Q: Can I use parts marked "Not For New Designs" in new circuit designs?

A: Parts marked "Not For New Designs" (1N5407RLG and 1N5408RLG from onsemi) are available for legacy system support, repair, and replacement applications. These parts should not be selected for new circuit development. Active status parts are recommended for all new designs.

Q: What is the temperature operating range limitation when substituting?

A: The BYM36E-TAP operates to 175°C junction temperature. Most active substitutes operate to 150°C maximum (1N5408G, 1N5408GP-TP, 1N5407G), while Comchip variants operate to 125°C. Applications requiring junction temperatures above 150°C cannot use identified substitutes. Thermal analysis must confirm that actual junction temperature remains within the substitute part's rated range.

Q: Does forward voltage drop differ significantly between the BYM36E-TAP and substitutes?

A: The BYM36E-TAP specifies 1.78 V forward voltage at 3 A. Substitutes range from 0.95 V to 1.7 V at 3 A. The 1N5408 series (0.95 to 1.1 V) exhibits lower forward drop, reducing power dissipation. The EGP30K (1.7 V) approaches the original specification. Forward voltage differences affect thermal design and power budget calculations.

Q: Is the BYM36E-TAP avalanche technology critical for my application?

A: Avalanche technology provides controlled reverse breakdown characteristics. If your circuit design relies on avalanche breakdown for voltage regulation or transient protection, standard recovery substitutes (1N5407/1N5408 series) are not functionally equivalent. If the diode operates in forward conduction or standard rectification mode, standard recovery substitutes are acceptable.

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