BYG22AHE3_A/I Equivalent & Substitute Parts

Part Overview

The BYG22AHE3_A/I is an avalanche diode manufactured by Vishay General Semiconductor - Diodes Division, classified as a fast recovery rectifier diode in the DO-214AC (SMA) surface mount package. This component is designed for applications requiring reverse voltage protection and fast switching characteristics in automotive-grade environments. The part maintains active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified to address inventory availability, supply chain continuity, and equivalent functional performance in circuit designs where the primary part number is unavailable.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.1 @ 2 A	V
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	1 @ 50 V	µA
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Package / Case	DO-214AC, SMA	-
Mounting Type	Surface Mount	-
Operating Temperature - Junction	-55 to 150	°C
Technology	Avalanche	-

Substitute Part Grouping Explanation

Substitute parts for the BYG22AHE3_A/I are identified based on strict electrical and mechanical parameter equivalence. The substitution logic is based on the following critical parameters:

Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Mechanical Parameters:

Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 150°C

Compliance Parameters:

Technology: Avalanche
RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected

All identified substitute parts match these parameters exactly, ensuring direct functional and physical compatibility in circuit applications.

Parameter Comparison

Parameter	BYG22AHE3_A/I	BYG22A-E3/TR	BYG22AHE3_A/H
Manufacturer	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
Category	Diodes, Rectifiers	Diodes, Rectifiers	Diodes, Rectifiers
Technology	Avalanche	Avalanche	Avalanche
Voltage - DC Reverse (Vr) (Max)	50 V	50 V	50 V
Current - Average Rectified (Io)	2 A	2 A	2 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 2 A	1.1 V @ 2 A	1.1 V @ 2 A
Reverse Recovery Time (trr)	25 ns	25 ns	25 ns
Current - Reverse Leakage @ Vr	1 µA @ 50 V	1 µA @ 50 V	1 µA @ 50 V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case	DO-214AC, SMA	DO-214AC, SMA	DO-214AC, SMA
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active

Engineering Selection Recommendations

BYG22AHE3_A/I (Primary Part)

The BYG22AHE3_A/I is the primary reference part with automotive-grade qualification (AEC-Q101) and active product status. This part is suitable for applications requiring automotive-level reliability and compliance. Current inventory is 632 pieces.

BYG22AHE3_A/H (Substitute - Automotive Grade)

The BYG22AHE3_A/H is a direct parametric equivalent with identical electrical and mechanical specifications. This part maintains automotive-grade qualification (AEC-Q101) and active product status. Inventory availability is 4,528 pieces. The difference between BYG22AHE3_A/I and BYG22AHE3_A/H is limited to packaging designation and supplier tape configuration, with no impact on functional performance or compliance.

BYG22A-E3/TR (Substitute - Standard Grade)

The BYG22A-E3/TR is a parametric equivalent with identical electrical and mechanical specifications and active product status. This part does not carry automotive-grade qualification or AEC-Q101 designation. Inventory availability is 30,200 pieces. This part is suitable for non-automotive applications or where automotive qualification is not required. The part maintains ROHS3 compliance and REACH unaffected status.

All three parts are manufactured by Vishay General Semiconductor - Diodes Division and share the same base product number (BYG22), ensuring design continuity and supply chain flexibility.

Frequently Asked Questions (FAQ)

Q: Can BYG22A-E3/TR be used as a direct replacement for BYG22AHE3_A/I in automotive applications?

A: BYG22A-E3/TR matches all electrical and mechanical parameters of BYG22AHE3_A/I. However, BYG22A-E3/TR does not carry AEC-Q101 automotive qualification. Use of this part in automotive applications depends on specific design requirements and qualification standards mandated by the application. If AEC-Q101 qualification is a design requirement, BYG22AHE3_A/H is the appropriate substitute.

Q: What is the difference between BYG22AHE3_A/I and BYG22AHE3_A/H?

A: Both parts are parametrically identical with identical electrical specifications, package type (DO-214AC, SMA), and automotive-grade qualification (AEC-Q101). The designation difference (I versus H) reflects supplier tape configuration and packaging variant. Both are suitable for identical circuit applications.

Q: Are all three parts compatible with the same PCB footprint?

A: Yes. All three parts use the DO-214AC (SMA) surface mount package with identical mechanical dimensions and pin configuration. PCB footprints are interchangeable.

Q: What is the operating temperature range for these diodes?

A: The junction operating temperature range for all three parts is -55°C to 150°C, providing coverage for industrial and automotive temperature environments.

Q: Do all substitute parts meet RoHS and REACH compliance?

A: Yes. All three parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the reverse recovery time specification?

A: The reverse recovery time (trr) for all three parts is 25 nanoseconds, supporting fast switching applications with minimal reverse current transients.

Q: Are these parts suitable for high-frequency switching applications?

A: Yes. All three parts are classified as fast recovery diodes with recovery time ≤ 500 nanoseconds at currents > 200 mA, supporting switching frequencies typical of modern power conversion circuits.

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