BUZ73A H N-Channel MOSFET 200V 5.5A Equivalent & Substitute Parts

Part Overview

The BUZ73A H is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 5.5A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete product status. Due to its obsolete classification and limited availability relative to active alternatives, identifying equivalent substitute components is necessary for ongoing design support and production continuity.

Substiute Parts

BUZ73A H

Infineon TechnologiesIn Stock: 1180BUZ73A H Datasheet

Current PartRFQ

IRFI630GPBF

Vishay SiliconixIn Stock: 71096IRFI630GPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BUZ73A H is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must meet or exceed 5.5A at 25°C
• Gate-Source Voltage (Vgs): Must support ±20V maximum rating
• Operating Temperature Range: Must span -55°C to 150°C

Mechanical Compatibility Requirements:

• Package Type: TO-220-3 through-hole configuration
• Mounting Type: Through-hole assembly

Technology Requirements:

• FET Technology: N-Channel MOSFET (Metal Oxide Semiconductor)

The IRFI630GPBF from Vishay Siliconix satisfies all substitution criteria through direct parameter alignment.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The BUZ73A H carries obsolete product status, while the IRFI630GPBF is classified as active. This status difference supports transition to the IRFI630GPBF for new designs and ongoing production requirements.

Compliance and Certification: The IRFI630GPBF holds ROHS3 compliance certification, whereas the BUZ73A H does not specify RoHS status. Both components are REACH Affected or Unaffected respectively and carry EAR99 ECCN classification. The IRFI630GPBF's active RoHS3 compliance status aligns with current regulatory requirements for electronic component procurement.

Electrical Performance: The IRFI630GPBF demonstrates superior on-resistance characteristics (400 mOhm versus 600 mOhm), resulting in lower conduction losses. The substitute part's higher continuous drain current rating (5.9A versus 5.5A) provides additional design margin. The lower maximum power dissipation rating (35W versus 40W) on the substitute requires thermal design verification in applications operating near the BUZ73A H's 40W limit.

Inventory and Availability: The IRFI630GPBF maintains significantly higher inventory levels (71,055 pieces) compared to the BUZ73A H (1,110 pieces), supporting supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IRFI630GPBF directly replace the BUZ73A H in existing circuit designs?

A: Yes. Both components share identical drain-to-source voltage (200V), gate-source voltage (±20V), operating temperature range (-55°C to 150°C), and TO-220-3 through-hole package configuration. The IRFI630GPBF's higher continuous drain current (5.9A) and lower on-resistance (400 mOhm) are compatible with applications designed for the BUZ73A H.

Q: What is the significance of the lower power dissipation rating on the IRFI630GPBF?

A: The IRFI630GPBF specifies 35W maximum power dissipation compared to the BUZ73A H's 40W. In applications where the BUZ73A H operates continuously at or near 40W, thermal design verification is required to confirm the substitute remains within safe operating limits. The superior on-resistance of the IRFI630GPBF typically results in lower actual power dissipation during normal operation.

Q: Are there package or pinout differences between these components?

A: No. Both components use the TO-220-3 through-hole package with identical pinout configuration. PCB layout and mechanical mounting remain unchanged during substitution.

Q: What compliance advantages does the IRFI630GPBF offer?

A: The IRFI630GPBF carries ROHS3 compliance certification, supporting procurement requirements in regulated markets. Both components share EAR99 ECCN classification and identical HTSUS codes.

Q: How do the on-resistance specifications compare?

A: The IRFI630GPBF specifies 400 mOhm maximum on-resistance at 3.5A and 10V gate-source voltage, compared to the BUZ73A H's 600 mOhm at 4.5A and 10V. The lower on-resistance reduces conduction losses and heat generation during operation.

Q: Is the IRFI630GPBF suitable for high-temperature applications?

A: Yes. The IRFI630GPBF maintains the same operating temperature range as the BUZ73A H (-55°C to 150°C junction temperature), supporting identical thermal operating conditions.