BUZ73A N-Channel MOSFET 200V 5.5A Equivalent & Substitute Parts

Part Overview

The BUZ73A is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 5.5A continuous drain current at 25°C. This device is part of the SIPMOS® series and features a Through Hole TO-220-3 package configuration. The BUZ73A is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and gate drive characteristics while accommodating the Through Hole TO-220-3 package standard.

Key Parameters

Parameter	BUZ73A Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	5.5	A (Tc)
Rds On (Max) @ Id, Vgs	600	mOhm @ 4.5A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 1mA
Gate Voltage (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	530	pF @ 25V
Power Dissipation (Max)	40	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the BUZ73A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal 200V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be TO-220-3 Through Hole configuration
Gate Threshold Voltage Vgs(th): Must be ≤4V @ 1mA
Gate Voltage Rating: Must support ±20V

Secondary Selection Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 5.5A @ 25°C
Rds On (Max): Lower values indicate improved performance; substitutes with reduced on-resistance are acceptable
Input Capacitance (Ciss): Provided for circuit design consideration
Power Dissipation: Substitutes with equal or higher ratings are acceptable
Operating Temperature: Substitutes must support the -55°C to 150°C range or higher

All four substitute parts (IRF630, PHP20NQ20T,127, PHP33NQ20T,127, PSMN057-200P,127) meet the primary compatibility criteria. They are classified as N-Channel MOSFETs with 200V Vdss rating in TO-220-3 package configuration. Differences in continuous drain current, on-resistance, and power dissipation reflect design improvements and expanded application capability.

Parameter Comparison

Parameter	BUZ73A	IRF630	PHP20NQ20T,127	PHP33NQ20T,127	PSMN057-200P,127	Unit
Manufacturer	Infineon Technologies	Harris Corporation	NXP Semiconductors	Nexperia USA Inc.	Nexperia USA Inc.	—
Drain to Source Voltage (Vdss)	200	200	200	200	200	V
Continuous Drain Current (Id) @ 25°C	5.5	9	20	32.7	39	A (Tc)
Rds On (Max) @ Id, Vgs	600 @ 4.5A, 10V	400 @ 5.4A, 10V	130 @ 10A, 10V	77 @ 15A, 10V	57 @ 17A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4 @ 1mA	4 @ 250µA	4 @ 1mA	4 @ 1mA	4 @ 1mA	V
Gate Voltage (Max)	±20	—	±20	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	530 @ 25V	800 @ 25V	2470 @ 25V	1870 @ 25V	3750 @ 25V	pF
Power Dissipation (Max)	40	—	150	230	250	W (Tc)
Operating Temperature Range	-55 to 150	—	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Product Status	Obsolete	Obsolete	Active	Obsolete	Active	—
RoHS Status	—	Non-compliant	—	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IRF630 (Harris Corporation) The IRF630 is an obsolete N-Channel MOSFET with 200V Vdss and 9A continuous drain current. This part provides a 1.6× increase in current handling over the BUZ73A with improved on-resistance (400mOhm vs. 600mOhm). However, IRF630 is classified as RoHS non-compliant and obsolete, limiting its suitability for new designs requiring regulatory compliance.

PHP20NQ20T,127 (NXP Semiconductors) The PHP20NQ20T,127 is an active N-Channel MOSFET from the TrenchMOS™ series with 200V Vdss and 20A continuous drain current. This part delivers 3.6× the current capacity of the BUZ73A with significantly reduced on-resistance (130mOhm). Extended operating temperature range (-55°C to 175°C) and active product status support long-term availability. This part is suitable for applications requiring enhanced thermal performance and regulatory compliance.

PHP33NQ20T,127 (Nexperia USA Inc.) The PHP33NQ20T,127 is an obsolete N-Channel MOSFET from the TrenchMOS™ series with 200V Vdss and 32.7A continuous drain current. This part provides 5.9× the current capacity with substantially reduced on-resistance (77mOhm). ROHS3 compliance is confirmed. Obsolete status may restrict procurement for new production designs.

PSMN057-200P,127 (Nexperia USA Inc.) The PSMN057-200P,127 is an active N-Channel MOSFET from the TrenchMOS™ series with 200V Vdss and 39A continuous drain current. This part delivers 7.1× the current capacity with the lowest on-resistance (57mOhm) among all substitutes. Active product status, ROHS3 compliance, and extended operating temperature range (-55°C to 175°C) make this part optimal for new designs requiring maximum thermal efficiency and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the BUZ73A be directly replaced with any of these substitute parts?

A: Yes, all four substitute parts are electrically and mechanically compatible with the BUZ73A. All maintain 200V Vdss rating, N-Channel configuration, and TO-220-3 package. Gate threshold voltage and gate voltage ratings are compatible. Substitution is valid from an electrical standpoint.

Q: What is the primary difference between these substitute parts?

A: The substitute parts differ primarily in continuous drain current rating and on-resistance. The BUZ73A is rated for 5.5A; substitutes range from 9A (IRF630) to 39A (PSMN057-200P,127). Lower on-resistance values in higher-current parts indicate improved thermal efficiency and reduced power dissipation during operation.

Q: Which substitute part should be selected for new product designs?

A: For new designs, PHP20NQ20T,127 or PSMN057-200P,127 are recommended. Both are active products with ROHS3 compliance and extended operating temperature ranges. PSMN057-200P,127 offers superior thermal performance with the lowest on-resistance. PHP20NQ20T,127 provides a balanced option with adequate current capacity and active status.

Q: Are there thermal considerations when substituting these parts?

A: Yes. Substitute parts with lower on-resistance values generate less heat during operation. PSMN057-200P,127 (57mOhm) dissipates significantly less power than BUZ73A (600mOhm) at equivalent current levels. Circuit designs may require thermal management adjustments when upgrading to lower on-resistance devices.

Q: What is the impact of higher input capacitance in substitute parts?

A: Higher input capacitance (Ciss) in substitute parts requires increased gate charge for switching. BUZ73A has 530pF; PSMN057-200P,127 has 3750pF. Gate driver circuits must supply adequate current to charge the gate within required switching time. This may necessitate gate driver circuit modifications in high-frequency applications.

Q: Are all substitute parts available in the same package configuration?

A: Yes. All substitute parts use TO-220-3 Through Hole package, maintaining mechanical compatibility with BUZ73A PCB layouts and thermal management solutions.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Active products have confirmed long-term availability and manufacturing support. Obsolete products may have limited stock and no future production. For new designs, active products (PHP20NQ20T,127 and PSMN057-200P,127) are preferred. Obsolete substitutes (IRF630 and PHP33NQ20T,127) are suitable only for legacy system maintenance.

Q: Do all substitute parts meet RoHS compliance requirements?

A: No. IRF630 is RoHS non-compliant. PHP33NQ20T,127, PSMN057-200P,127, and PHP20NQ20T,127 are ROHS3 compliant. For applications requiring regulatory compliance, select ROHS3-compliant substitutes.

Q: Can the BUZ73A be used in applications designed for higher-current substitute parts?

A: No. The BUZ73A has lower current rating (5.5A) than all substitutes. Using BUZ73A in circuits designed for higher-current parts may result in thermal stress and device failure. Substitution must follow the principle of equal or superior electrical ratings.

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