BUZ73 N-Channel MOSFET 200V 7A Equivalent & Substitute Parts

Part Overview

The BUZ73 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 7A continuous drain current in a TO-220-3 through-hole package. This device is part of the SIPMOS® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts with improved electrical performance, higher current ratings, or active product status are necessary for new designs and ongoing production requirements.

Key Parameters

Parameter	BUZ73 Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	7	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	400 mOhm @ 4.5A, 10V	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ Id	4	V @ 1mA
Gate-Source Voltage (Vgs) Maximum	±20	V
Input Capacitance (Ciss) @ Vds	530	pF @ 25V
Power Dissipation (Max)	40	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the BUZ73 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥200V to maintain voltage rating compatibility
Continuous Drain Current (Id): Must be ≥7A to support the original current requirement
Gate-Source Voltage (Vgs): Must support ±20V operation
Package Type: Must be TO-220-3 through-hole configuration for mechanical compatibility
FET Type: Must be N-Channel MOSFET technology

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Higher ratings provide thermal margin
Operating Temperature Range: Extended ranges provide design flexibility
Product Status: Active status ensures long-term availability

Substitute parts are grouped into three categories based on performance tier relative to the BUZ73:

Category 1 - Direct Equivalents (7A to 10A range): IRF630NPBF, IRF630PBF, RCX100N25 Category 2 - Enhanced Performance (18A to 20A range): IRFB4020PBF, PHP20NQ20T,127 Category 3 - High-Current Variants (32.7A to 39A range): PHP33NQ20T,127, PSMN057-200P,127

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Power Dissipation (W)	Temp Range (°C)	Package	Status
BUZ73	Infineon	200	7	400 @ 4.5A, 10V	40	-55 to 150	TO-220-3	Obsolete
IRF630NPBF	Infineon	200	9.3	300 @ 5.4A, 10V	82	-55 to 175	TO-220-3	Active
IRF630PBF	Vishay Siliconix	200	9	400 @ 5.4A, 10V	74	-55 to 150	TO-220-3	Active
IRF630	Harris Corporation	200	9	400 @ 5.4A, 10V	—	—	TO-220-3	Obsolete
RCX100N25	Rohm Semiconductor	250	10	—	40	—	TO-220-3	Active
IRFB4020PBF	Infineon	200	18	100 @ 11A, 10V	100	-55 to 175	TO-220-3	Active
PHP20NQ20T,127	NXP Semiconductors	200	20	130 @ 10A, 10V	150	-55 to 175	TO-220-3	Active
PHP33NQ20T,127	Nexperia USA Inc.	200	32.7	77 @ 15A, 10V	230	-55 to 175	TO-220-3	Obsolete
PSMN057-200P,127	Nexperia USA Inc.	200	39	57 @ 17A, 10V	250	-55 to 175	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement with Active Product Status:

IRF630NPBF (Infineon Technologies) is the primary recommended substitute. It maintains the same 200V voltage rating and TO-220-3 package configuration as the BUZ73. The IRF630NPBF offers improved electrical performance with 9.3A continuous drain current, reduced on-state resistance of 300 mOhm, and extended operating temperature range to 175°C. Product status is Active with ROHS3 compliance, ensuring long-term availability and regulatory compliance.

IRF630PBF (Vishay Siliconix) provides an alternative from a different manufacturer with identical 200V/9A specifications and ROHS3 compliance. This part maintains the same on-state resistance as the BUZ73 (400 mOhm) while offering higher power dissipation capability (74W) and active product status.

For Applications Requiring Higher Current Capacity:

IRFB4020PBF (Infineon Technologies) supports 18A continuous drain current with significantly reduced on-state resistance (100 mOhm) and 100W power dissipation. This part is suitable for designs requiring higher current handling with improved thermal performance. Product status is Active with ROHS3 compliance and extended temperature range to 175°C.

PHP20NQ20T,127 (NXP Semiconductors) offers 20A continuous drain current with 130 mOhm on-state resistance and 150W power dissipation. This TrenchMOS™ technology device provides enhanced performance for high-current applications while maintaining 200V voltage rating and TO-220-3 package compatibility. Product status is Active.

For Maximum Current Capacity Applications:

PSMN057-200P,127 (Nexperia USA Inc.) delivers 39A continuous drain current with 57 mOhm on-state resistance and 250W power dissipation. This TrenchMOS™ technology device is suitable for high-power switching applications. Product status is Active with ROHS3 compliance and extended temperature range to 175°C.

Compliance Considerations:

All recommended active substitutes comply with ROHS3 standards. The BUZ73 and IRF630 (Harris) are obsolete and should not be selected for new designs. RCX100N25 offers higher voltage rating (250V) but limited technical specification data availability.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace BUZ73 with IRF630NPBF without circuit modifications?

A: Yes. Both devices share identical voltage rating (200V), compatible current ratings (7A vs. 9.3A), and TO-220-3 package configuration. The IRF630NPBF provides improved performance with lower on-state resistance and higher power dissipation capability. No circuit modifications are required for mechanical or electrical compatibility.

Q2: What is the key difference between IRF630NPBF and IRF630PBF?

A: Both parts maintain 200V/9A specifications and TO-220-3 packaging. IRF630NPBF (Infineon) offers 9.3A current rating and 82W power dissipation with extended temperature range to 175°C. IRF630PBF (Vishay Siliconix) provides 9A current rating and 74W power dissipation with temperature range to 150°C. Both are Active products with ROHS3 compliance.

Q3: Why would I select IRFB4020PBF or PHP20NQ20T,127 over IRF630NPBF?

A: These higher-current devices (18A and 20A respectively) are selected when circuit requirements exceed 7A continuous drain current. They provide significantly lower on-state resistance (100 mOhm and 130 mOhm) and higher power dissipation capability (100W and 150W), resulting in reduced heat generation and improved efficiency in high-current switching applications.

Q4: Is RCX100N25 a suitable substitute for BUZ73?

A: RCX100N25 meets the core substitution criteria with 250V voltage rating, 10A current capacity, and TO-220-3 package. However, limited technical specification data (on-state resistance and threshold voltage not provided) makes detailed performance comparison difficult. This part is suitable only when complete datasheet specifications can be verified against application requirements.

Q5: Can I use PHP33NQ20T,127 or PSMN057-200P,127 as replacements?

A: These high-current devices (32.7A and 39A) are electrically compatible with BUZ73 in terms of voltage rating and package type. However, they are oversized for applications requiring only 7A continuous current. Selection should be based on actual circuit current requirements. PHP33NQ20T,127 is Obsolete; PSMN057-200P,127 is Active and preferred if high-current capability is needed.

Q6: What does "Product Status: Obsolete" mean for component selection?

A: Obsolete status indicates the manufacturer has discontinued production and support. BUZ73 and IRF630 (Harris) should not be selected for new designs. Active-status substitutes ensure long-term availability, ongoing manufacturer support, and compliance with current regulatory standards.

Q7: Are all substitute parts ROHS3 compliant?

A: Most active substitutes are ROHS3 compliant (IRF630NPBF, IRF630PBF, IRFB4020PBF, PHP33NQ20T,127, PSMN057-200P,127). IRF630 (Harris) is RoHS non-compliant and obsolete. IRF630PBF shows REACH Affected status. Verify compliance requirements for your specific application before final selection.

Q8: What is the significance of on-state resistance (Rds On) in substitute selection?

A: Lower Rds On values reduce power dissipation and heat generation during operation. BUZ73 has 400 mOhm Rds On. IRF630NPBF reduces this to 300 mOhm, while IRFB4020PBF achieves 100 mOhm and PSMN057-200P,127 achieves 57 mOhm. Lower values improve efficiency but are only beneficial if circuit current requirements justify the higher-rated device.

Q9: Does operating temperature range affect substitute selection?

A: Yes. BUZ73 operates from -55°C to 150°C. Most active substitutes extend the upper limit to 175°C, providing additional thermal margin. Extended temperature range is beneficial for applications in high-temperature environments or with limited thermal management. Selection should match application temperature requirements.

Q10: Why is package type (TO-220-3) critical for substitution?

A: Package type determines mechanical compatibility with PCB layouts and thermal management solutions. All listed substitutes maintain TO-220-3 through-hole configuration, ensuring direct pin compatibility and identical mounting requirements. Deviating from this package type requires circuit board redesign.

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