BUZ32 H Equivalent & Substitute Parts

Part Overview

The BUZ32 H is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 9.5A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The BUZ32 H is classified as obsolete. Locating equivalent or substitute components is necessary for system redesign, production continuation, or component procurement when original stock becomes unavailable.

Substiute Parts

BUZ32 H

Infineon TechnologiesIn Stock: 889BUZ32 H Datasheet

Current PartRFQ

IRF630

Harris CorporationIn Stock: 9777IRF630 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BUZ32 H is determined by strict equivalence across the following critical parameters:

Voltage Rating: Drain-to-source voltage (Vdss) must equal or exceed 200V to maintain system voltage margin and reliability.

Current Rating: Continuous drain current (Id) must be sufficient to handle the 9.5A requirement at 25°C operating conditions.

On-State Resistance (Rds On): Maximum on-state resistance must not exceed 400 mOhm at the specified gate-source voltage (10V) to ensure thermal performance and power dissipation compatibility.

Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V threshold specification to ensure proper gate drive circuit operation.

Package and Mounting: Physical package must be TO-220-3 through-hole configuration to maintain PCB compatibility and thermal management characteristics.

Technology: N-Channel MOSFET (Metal Oxide Semiconductor) technology is required for functional equivalence.

Parameter Comparison

Engineering Selection Recommendations

The IRF630 manufactured by Harris Corporation is electrically equivalent to the BUZ32 H based on matching voltage rating (200V Vdss), comparable current rating (9A versus 9.5A), and identical on-state resistance specification (400 mOhm @ 10V gate voltage).

Both devices are classified as obsolete products. The IRF630 maintains the same through-hole mounting configuration and TO-220 package family, ensuring mechanical compatibility with existing PCB layouts.

The IRF630 exhibits higher input capacitance (800 pF versus 530 pF), which may affect gate drive circuit timing characteristics. This parameter difference must be evaluated within the context of the specific application's gate drive circuit design.

The IRF630 is RoHS non-compliant, whereas the BUZ32 H carries REACH Unaffected status. Compliance requirements for the target application must be verified before final component selection.

Both devices carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications for export and tariff purposes.

Frequently Asked Questions (FAQ)

Q: Can the IRF630 directly replace the BUZ32 H in existing designs?

A: The IRF630 is electrically equivalent based on voltage rating, current rating, and on-state resistance. However, the higher input capacitance (800 pF versus 530 pF) may require gate drive circuit evaluation. Physical package compatibility (TO-220-3 versus TO-220AB) must be confirmed for the specific PCB layout.

Q: What is the significance of the input capacitance difference between these devices?

A: Input capacitance (Ciss) affects gate charge requirements and switching speed. The IRF630's higher capacitance (800 pF) requires greater gate charge compared to the BUZ32 H (530 pF). Gate drive circuits must supply sufficient current to charge this capacitance within the required switching time window.

Q: Are there compliance differences between the BUZ32 H and IRF630?

A: The BUZ32 H is REACH Unaffected, while the IRF630 is RoHS non-compliant. Applications subject to RoHS or REACH regulations must verify compliance requirements before selecting the IRF630 as a substitute.

Q: What is the practical difference between 9.5A and 9A continuous drain current ratings?

A: The BUZ32 H is rated for 9.5A continuous drain current, while the IRF630 is rated for 9A. For applications requiring sustained current near or exceeding 9A, thermal analysis must confirm that the IRF630's lower current rating does not compromise system reliability or thermal margins.

Q: Do both devices use the same gate threshold voltage?

A: Both devices specify 4V gate threshold voltage (Vgs(th)). However, the measurement conditions differ: BUZ32 H is measured at 1mA drain current, while IRF630 is measured at 250µA. This difference may result in slightly different gate drive behavior in practical circuits.

Q: Are both devices suitable for high-temperature applications?

A: Both devices operate across the -55°C to 150°C temperature range. Thermal performance must be verified for the specific application, considering the IRF630's lower current rating and potential thermal dissipation differences.