BUZ32 N-Channel MOSFET 200V 9.5A Equivalent & Substitute Parts

Part Overview

The BUZ32 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 9.5A continuous drain current. This device is part of the SIPMOS® series and is housed in a TO-220-3 through-hole package. The BUZ32 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts for the BUZ32 must maintain electrical compatibility across critical parameters including drain-to-source voltage rating, continuous drain current capability, gate threshold voltage, and on-state resistance characteristics. All substitute devices listed are N-Channel MOSFETs with matching or superior electrical specifications and compatible through-hole packaging.

Key Parameters

Parameter	BUZ32 Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	9.5	A
On-State Resistance (Rds On Max) @ Id, Vgs	400 mOhm @ 6A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 1mA
Gate-Source Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	530	pF @ 25V
Power Dissipation (Max)	75	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the BUZ32 are selected based on the following electrical and mechanical criteria:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 200V
Continuous Drain Current (Id): Equal to or greater than 9.5A at 25°C
Gate Threshold Voltage (Vgs(th)): Maximum 4V @ 1mA
Gate-Source Voltage (Vgs): ±20V or greater
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET technology

Substitution Logic: Devices meeting or exceeding the BUZ32 electrical specifications are classified as direct substitutes. Substitutes may feature improved on-state resistance, higher current ratings, or enhanced power dissipation capabilities while maintaining voltage and gate control compatibility. All substitute parts listed are N-Channel MOSFETs with through-hole TO-220 packaging suitable for direct board-level replacement.

Parameter Comparison

Parameter	BUZ32	RCX100N25	IRF630	PHP20NQ20T,127	PHP33NQ20T,127	PSMN057-200P,127	Unit
Manufacturer	Infineon	Rohm	Harris	NXP	Nexperia	Nexperia	—
Vdss	200	250	200	200	200	200	V
Id @ 25°C	9.5	10	9	20	32.7	39	A
Rds On (Max) @ Id, Vgs	400 @ 6A, 10V	—	400 @ 5.4A, 10V	130 @ 10A, 10V	77 @ 15A, 10V	57 @ 17A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 1mA	—	4 @ 250µA	4 @ 1mA	4 @ 1mA	4 @ 1mA	V
Vgs (Max)	±20	±30	—	±20	±20	±20	V
Ciss (Max) @ Vds	530 @ 25V	—	800 @ 25V	2470 @ 25V	1870 @ 25V	3750 @ 25V	pF
Power Dissipation (Max)	75	40	—	150	230	250	W
Operating Temperature	-55 to 150	—	—	-55 to 175	-55 to 175	-55 to 175	°C
Package	TO-220-3	TO-220FM	TO-220AB	TO-220AB	TO-220AB	TO-220AB	—
Product Status	Obsolete	Active	Obsolete	Active	Obsolete	Active	—
RoHS Compliance	—	ROHS3	Non-compliant	—	ROHS3	ROHS3	—

Engineering Selection Recommendations

Active Product Status Substitutes:

The following substitute parts are classified as Active products with current manufacturing support:

RCX100N25 (Rohm Semiconductor): Meets voltage and current specifications with 250V Vdss rating. ROHS3 compliant. Suitable for applications requiring higher voltage margin.
PHP20NQ20T,127 (NXP Semiconductors): Exceeds current rating at 20A with improved on-state resistance of 130 mOhm. TrenchMOS™ series technology. Operating temperature range extended to 175°C. Recommended for applications requiring enhanced thermal performance.
PSMN057-200P,127 (Nexperia USA Inc.): Highest current rating at 39A with lowest on-state resistance of 57 mOhm. TrenchMOS™ series technology. ROHS3 compliant. Extended operating temperature to 175°C. Suitable for high-current applications with thermal management requirements.

Obsolete Product Status Substitutes:

IRF630 (Harris Corporation): Matches BUZ32 voltage and current specifications closely. On-state resistance of 400 mOhm @ 5.4A, 10V. RoHS non-compliant. Suitable only for legacy system maintenance where RoHS compliance is not required.
PHP33NQ20T,127 (Nexperia USA Inc.): Exceeds specifications with 32.7A rating and 77 mOhm on-state resistance. ROHS3 compliant. Obsolete status limits procurement availability.

Recommended Selection Criteria:

For new designs, select from Active status products: RCX100N25, PHP20NQ20T,127, or PSMN057-200P,127. For legacy system support where RoHS compliance is not mandated, IRF630 provides direct electrical equivalence. For applications requiring maximum current handling and thermal performance, PSMN057-200P,127 is the optimal choice.

Frequently Asked Questions (FAQ)

Q: Can the BUZ32 be directly replaced with any of these substitute parts?

A: Direct replacement is possible with all listed substitutes at the board level due to matching TO-220-3 through-hole packaging. However, electrical performance differences exist. Devices with higher current ratings (PHP20NQ20T,127, PHP33NQ20T,127, PSMN057-200P,127) will operate at lower on-state resistance, reducing heat dissipation. Verify thermal design compatibility before substitution.

Q: What is the difference between TO-220-3, TO-220FM, and TO-220AB packaging?

A: All three are through-hole TO-220 variants with three leads suitable for direct board-level replacement. TO-220-3 is the standard configuration. TO-220FM (Full Pack) and TO-220AB are alternative designations from different manufacturers. Pin configuration and mounting hole spacing are compatible across all variants.

Q: Which substitute offers the best on-state resistance performance?

A: PSMN057-200P,127 provides the lowest on-state resistance at 57 mOhm @ 17A, 10V, followed by PHP33NQ20T,127 at 77 mOhm @ 15A, 10V. Lower on-state resistance reduces power dissipation and heat generation during operation.

Q: Are all substitute parts RoHS compliant?

A: RCX100N25, PHP33NQ20T,127, and PSMN057-200P,127 are ROHS3 compliant. IRF630 is RoHS non-compliant. PHP20NQ20T,127 RoHS status is not specified in available data. Verify RoHS compliance requirements for your application before selection.

Q: What is the maximum operating temperature for each substitute?

A: BUZ32 operates to 150°C. RCX100N25 operates to 150°C. IRF630 operating temperature is not specified. PHP20NQ20T,127, PHP33NQ20T,127, and PSMN057-200P,127 all operate to 175°C, providing 25°C additional thermal margin.

Q: Can I use a substitute with higher current rating in a circuit designed for the BUZ32?

A: Yes. Substitutes with higher current ratings (PHP20NQ20T,127 at 20A, PHP33NQ20T,127 at 32.7A, PSMN057-200P,127 at 39A) are electrically compatible and will not damage circuits designed for the 9.5A BUZ32. The circuit will operate within the substitute device's safe operating area. Verify gate drive circuit compatibility with input capacitance values.

Q: How does input capacitance affect circuit performance?

A: Input capacitance (Ciss) affects gate charge requirements and switching speed. BUZ32 has 530 pF Ciss. Substitutes range from 800 pF (IRF630) to 3750 pF (PSMN057-200P,127). Higher capacitance requires stronger gate drive circuits for equivalent switching performance. Verify gate driver current capability before substitution.

Q: Which substitute is recommended for new designs?

A: PSMN057-200P,127 is recommended for new designs due to Active product status, ROHS3 compliance, superior on-state resistance, extended operating temperature range, and highest current rating. RCX100N25 and PHP20NQ20T,127 are alternative Active products suitable for applications with lower current requirements.

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