BUZ10 Equivalent & Substitute Parts

Part Overview

The BUZ10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 50V drain-to-source voltage and 23A continuous drain current in a Through Hole TO-220 package. This device is classified as obsolete, which necessitates identification of functionally equivalent alternatives for new designs and production continuity. The BUZ10 belongs to the STripFET™ series and is rated for 75W maximum power dissipation.

Substiute Parts

BUZ10

STMicroelectronicsIn Stock: 33737BUZ10 Datasheet

Current PartRFQ

BUZ11-NR4941

onsemiIn Stock: 4443BUZ11-NR4941 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BUZ10 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 50V
• Continuous Drain Current (Id) must meet or exceed 23A at 25°C
• Gate-Source Voltage (Vgs) rating must accommodate ±20V
• Gate Threshold Voltage (Vgs(th)) must be compatible at 4V @ 1mA
• Power Dissipation (Max) must support 75W

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-220-3 or equivalent TO-220 variant

The BUZ11-NR4941 manufactured by onsemi satisfies all substitution criteria. This device maintains identical voltage ratings (50V Vdss), exceeds the current requirement (30A vs. 23A), and is housed in the same TO-220-3 package. The BUZ11-NR4941 is classified as Active product status, ensuring ongoing availability and support.

Parameter Comparison

Engineering Selection Recommendations

The BUZ11-NR4941 is the qualified substitute for the BUZ10 based on the following factors:

Electrical Performance: The BUZ11-NR4941 meets all minimum electrical requirements. It maintains the 50V Vdss rating and exceeds the 23A continuous drain current specification with a 30A rating. The on-resistance (Rds On) of 40mOhm at 15A, 10V is superior to the BUZ10's 70mOhm specification, resulting in lower power dissipation and improved thermal performance in equivalent applications.

Package Compatibility: Both devices utilize the TO-220-3 Through Hole package, ensuring direct mechanical and thermal compatibility without PCB redesign.

Product Status and Compliance: The BUZ11-NR4941 carries Active product status, guaranteeing long-term availability and manufacturing support. The device is ROHS3 compliant, meeting current environmental and regulatory requirements, whereas the BUZ10 is classified as RoHS non-compliant.

Thermal Characteristics: Both devices are rated for 75W maximum power dissipation. The superior on-resistance of the BUZ11-NR4941 provides thermal margin in applications operating near the power dissipation limit.

Frequently Asked Questions (FAQ)

Q: Can the BUZ11-NR4941 directly replace the BUZ10 in existing designs?

A: Yes. The BUZ11-NR4941 is electrically and mechanically compatible with the BUZ10. Both devices share identical voltage ratings (50V Vdss), gate-source voltage specifications (±20V), and gate threshold voltage characteristics (4V @ 1mA). The TO-220-3 package is identical, requiring no PCB modifications. The BUZ11-NR4941 exceeds the current rating (30A vs. 23A) and provides lower on-resistance, making it a direct functional replacement.

Q: What are the key differences between the BUZ10 and BUZ11-NR4941?

A: The primary differences are manufacturer (STMicroelectronics vs. onsemi), product status (Obsolete vs. Active), and electrical performance. The BUZ11-NR4941 offers higher continuous drain current (30A vs. 23A), lower on-resistance (40mOhm vs. 70mOhm), and superior RoHS compliance (ROHS3 vs. non-compliant). Input capacitance is higher in the BUZ11-NR4941 (2000pF vs. 900pF), which may affect switching speed in high-frequency applications.

Q: Are there any thermal considerations when substituting the BUZ10 with the BUZ11-NR4941?

A: Both devices are rated for 75W maximum power dissipation and use the same TO-220-3 package. The BUZ11-NR4941's lower on-resistance (40mOhm vs. 70mOhm) results in reduced power dissipation at equivalent current levels, providing improved thermal performance. Thermal management requirements remain equivalent or are reduced with the substitute device.

Q: Does the higher input capacitance of the BUZ11-NR4941 affect circuit performance?

A: The BUZ11-NR4941 has higher input capacitance (Ciss) at 2000pF compared to the BUZ10 at 900pF. This parameter affects gate charge and switching speed. In applications with fast switching requirements or current-limited gate drive circuits, the increased capacitance may require gate driver circuit evaluation. For standard switching applications, this difference is typically not limiting.

Q: What is the operating temperature range difference between these devices?

A: The BUZ10 is rated for a maximum junction temperature (TJ) of 175°C. The BUZ11-NR4941 specifies an operating temperature range of -55°C to 150°C. The BUZ11-NR4941's maximum operating temperature is 25°C lower than the BUZ10. For applications operating near the upper temperature limit, thermal management design should account for this specification difference.

Q: Is the BUZ11-NR4941 available in the same packaging format?

A: Yes. The BUZ11-NR4941 is supplied in TO-220-3 Through Hole package, identical to the BUZ10. The supplier device package for the BUZ11-NR4941 is specified as Tube, whereas the BUZ10 packaging format is not specified in the provided data. Both devices are compatible with standard TO-220 mounting and thermal management solutions.