BUX84-S Equivalent & Substitute Parts Reference

Part Overview

The BUX84-S, manufactured by Bourns Inc., is a discontinued NPN bipolar (BJT) transistor with the following principal features: 400 V collector-emitter voltage, 2 A maximum collector current, 12 MHz transition frequency, and 40 W maximum power dissipation. It is supplied in a standard TO-220 through-hole package and is designated as obsolete. For ongoing projects requiring functionally equivalent transistors or for replacement in legacy equipment, identifying suitable substitute models is essential due to product discontinuation.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	2 A
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Current - Collector Cutoff (Max)	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 100mA, 5V
Power - Max	40 W
Frequency - Transition	12MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts are identified strictly by matching the following critical electrical and mechanical parameters: NPN transistor type, maximum voltage rating (Collector-Emitter Breakdown Voltage), maximum collector current, power dissipation, package (TO-220-3, Through Hole), and RoHS compliance. Only parts with documented values for these specified characteristics are considered as valid equivalents.

Parameters used for grouping:

Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition (where specified)
Operating Temperature
Package / Case
RoHS Status

Parameter Comparison

Parameter	Main Part BUX84-S (Bourns Inc.)	Substitute 1 BUX85G (onsemi)	Substitute 2 TSC741CZ C0G (Taiwan Semiconductor)
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	450 V	450 V
Current - Collector (Ic) (Max)	2 A	2 A	2.5 A
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	1V @ 200mA, 1A	2V @ 600mA, 2A
Current - Collector Cutoff (Max)	200µA	200µA	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 100mA, 5V	30 @ 100mA, 5V	50 @ 100mA, 5V
Power - Max	40 W	50 W	60 W
Frequency - Transition	12MHz	4MHz	-
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

The BUX84-S is classified as obsolete. Both BUX85G from onsemi and TSC741CZ C0G from Taiwan Semiconductor are listed as active products and are RoHS3 compliant. These factors directly support their use as current equivalents when selecting substitute parts within this product category.

Frequently Asked Questions (FAQ)

Q1: What key parameters are required to select a substitute for BUX84-S?
A1: Substitute selection is based strictly on transistor type (NPN), maximum collector-emitter voltage, maximum collector current, Vce saturation voltage, DC current gain, maximum power rating, package (TO-220-3, Through Hole), and RoHS compliance.

Q2: Are the substitute parts mechanically compatible with the original BUX84-S?
A2: All listed substitutes utilize the TO-220-3 through-hole package, ensuring mechanical compatibility for board-level replacement.

Q3: Do substitute parts differ in their voltage or current ratings?
A3: Substitute parts have equal or higher voltage and current ratings as compared to the BUX84-S. These values are explicitly stated for each part.

Q4: Is the frequency transition parameter identical across all parts?
A4: The frequency transition parameter differs among parts and may be unspecified in certain substitutes; refer to the parameter comparison table for details.

Q5: Do substitute transistors comply with RoHS standards?
A5: All substitutes are RoHS3 compliant, as documented in the provided specifications.

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