BUT11 Equivalent & Substitute Parts

Part Overview

The BUT11 is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 5 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The 100 W power rating and saturation characteristics position this transistor for general-purpose switching and amplification applications in industrial and consumer electronics.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	5	A
Power - Max	100	W
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 3A	V
Current - Collector Cutoff (Max)	1	mA
Operating Temperature (Max)	150	°C (TJ)
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the BUT11 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must maintain the 400 V collector-emitter breakdown voltage specification to ensure safe operation in the original circuit topology.

Current Handling Capability: The substitute must support a minimum collector current rating equal to or exceeding the 5 A maximum specification of the BUT11.

Package Compatibility: The substitute must use the TO-220-3 through-hole package to ensure mechanical and thermal interface compatibility with existing printed circuit board layouts and heatsinking arrangements.

Transistor Polarity: The substitute must be NPN type to maintain circuit functionality and biasing relationships.

Power Dissipation: The substitute power rating must accommodate the thermal requirements of the application.

The MJE13007G meets all substitution criteria through equivalent voltage rating (400 V), superior current capability (8 A), identical package format (TO-220-3), matching transistor type (NPN), and comparable power handling (80 W).

Parameter Comparison

Parameter	BUT11	MJE13007G	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	400	V
Current - Collector (Ic) (Max)	5	8	A
Power - Max	100	80	W
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 3A	3V @ 2A, 8A	V
Current - Collector Cutoff (Max)	1	100	µA
Operating Temperature (Max)	150	150	°C (TJ)
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
Frequency - Transition	Not specified	14	MHz

Engineering Selection Recommendations

Product Status Consideration: The BUT11 is classified as obsolete, while the MJE13007G is active and currently manufactured. Selection of the MJE13007G ensures long-term component availability and supply chain continuity.

Compliance and Certification: Both devices carry REACH Unaffected status and EAR99 ECCN classification. The MJE13007G additionally carries RoHS3 compliance certification, meeting modern regulatory requirements for new designs and manufacturing processes.

Electrical Compatibility: The MJE13007G provides equivalent voltage performance at 400 V breakdown rating. The higher collector current rating (8 A versus 5 A) and transition frequency specification (14 MHz) indicate enhanced performance capability without compromising circuit compatibility in applications designed for the BUT11.

Thermal and Mechanical Fit: Identical TO-220-3 package and through-hole mounting ensure direct physical substitution without PCB layout modification or heatsinking redesign.

Application Suitability: The MJE13007G is designated as part of the SWITCHMODE™ series, indicating optimization for switching applications. This positioning aligns with typical BUT11 application domains in power conversion and switching circuits.

Frequently Asked Questions (FAQ)

Q: Can the MJE13007G directly replace the BUT11 in existing circuit designs?

A: Yes. Both devices share identical voltage rating (400 V), package format (TO-220-3), and transistor polarity (NPN). The MJE13007G's higher current rating (8 A) and lower saturation voltage provide equivalent or improved performance in applications designed for the BUT11's 5 A specification.

Q: What are the key differences between the BUT11 and MJE13007G?

A: The primary differences are product status (obsolete versus active), collector current rating (5 A versus 8 A), saturation voltage characteristics (1.5 V versus 3 V at specified conditions), collector cutoff current (1 mA versus 100 µA), and transition frequency specification (not provided versus 14 MHz). The MJE13007G includes RoHS3 compliance certification.

Q: Are there any circuit design considerations when substituting the MJE13007G for the BUT11?

A: Circuit designs must account for the higher saturation voltage of the MJE13007G (3 V at 2 A, 8 A versus 1.5 V at 600 mA, 3 A). Applications with tight saturation voltage margins require verification of base drive current and collector current operating points. The higher transition frequency may affect high-frequency switching behavior in circuits operating near the frequency limits.

Q: Is the TO-220-3 package identical between both devices?

A: Yes. Both devices use the TO-220-3 through-hole package with identical pin configuration and mechanical dimensions, enabling direct physical substitution without PCB modification.

Q: What is the inventory status of these devices?

A: The BUT11 has 5410 pieces in stock as new original inventory. The MJE13007G has 3360 pieces in stock as new original inventory. Given the obsolete status of the BUT11, the MJE13007G represents the recommended active alternative for new procurement.

Q: Does the MJE13007G meet modern regulatory requirements?

A: Yes. The MJE13007G carries RoHS3 compliance certification and REACH Unaffected status, meeting current environmental and regulatory standards for electronic component manufacturing and use.

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