BUR51 Equivalent & Substitute Parts

Part Overview

The BUR51 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for high-power applications requiring 200V collector-emitter breakdown voltage and 60A maximum collector current. The device is housed in a TO-3 chassis mount package and delivers 350W maximum power dissipation with a 16MHz transition frequency.

The BUR51 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and redesign requirements for legacy systems utilizing this transistor. Substitute parts must maintain electrical compatibility within the application's design parameters while meeting current availability and compliance standards.

Substiute Parts

BUR51

STMicroelectronicsIn Stock: 1086BUR51 Datasheet

Current PartRFQ

MJ15022G

onsemiIn Stock: 1752MJ15022G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BUR51 is evaluated based on the following critical electrical and mechanical parameters:

Voltage Compatibility: The substitute part must maintain a collector-emitter breakdown voltage rating of 200V or greater to ensure safe operation within the original circuit design envelope.

Current Capability: The substitute part must support the maximum collector current requirements of the application. Parts with lower current ratings may be suitable only for applications operating below the original design current specification.

Power Dissipation: The substitute part must provide adequate power handling capability. Thermal management and heatsinking requirements may differ based on maximum power rating.

Frequency Response: The transition frequency must be sufficient for the application's signal bandwidth requirements.

Package and Mounting: The substitute part must be compatible with the TO-3 package form factor and chassis mount configuration to ensure mechanical fit and thermal interface compatibility.

Compliance Status: The substitute part must maintain RoHS3 compliance and REACH unaffected status to meet regulatory requirements.

Parameter Comparison

Engineering Selection Recommendations

The MJ15022G is an active production NPN bipolar junction transistor from onsemi that shares the same 200V collector-emitter breakdown voltage rating and TO-3 package configuration as the BUR51. Both devices are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

The MJ15022G differs from the BUR51 in three key electrical parameters: maximum collector current (16A versus 60A), maximum power dissipation (250W versus 350W), and transition frequency (4MHz versus 16MHz). These differences establish the substitution applicability:

Direct Substitution: The MJ15022G is suitable as a direct substitute only in applications where the circuit design operates at collector currents not exceeding 16A, power dissipation below 250W, and signal frequencies below 4MHz.

Limited Substitution: Applications designed for the full 60A current capability or 350W power rating of the BUR51 cannot use the MJ15022G without circuit redesign or thermal management modifications.

Compliance Advantage: The MJ15022G holds active product status with current manufacturing support, ensuring long-term availability and supply chain stability compared to the obsolete BUR51.

Frequently Asked Questions (FAQ)

Q: Can the MJ15022G replace the BUR51 in all applications?

A: No. The MJ15022G has lower maximum collector current (16A versus 60A), lower power dissipation (250W versus 350W), and lower transition frequency (4MHz versus 16MHz). Substitution is valid only when the application operates within these lower limits.

Q: Are both transistors in the same package?

A: Yes. Both the BUR51 and MJ15022G use the TO-204AA (TO-3) package, which is a chassis mount configuration. Physical fit and heatsinking interface are compatible.

Q: What is the significance of the transition frequency difference?

A: The BUR51 operates at 16MHz transition frequency while the MJ15022G operates at 4MHz. Applications requiring higher-speed switching or signal processing may not function correctly with the lower-frequency MJ15022G.

Q: Are there compliance differences between these parts?

A: Both parts are ROHS3 compliant and REACH unaffected. No compliance barriers exist for substitution from a regulatory standpoint.

Q: Why is the BUR51 listed as obsolete?

A: The BUR51 is no longer in active production by STMicroelectronics. The MJ15022G from onsemi is an active product with ongoing manufacturing support.

Q: What should I verify before substituting the MJ15022G?

A: Confirm that your application's maximum collector current requirement does not exceed 16A, power dissipation does not exceed 250W, and signal frequency does not exceed 4MHz. Verify heatsinking adequacy for the 250W maximum power rating.