BUL213 Equivalent & Substitute Parts

Part Overview

The BUL213 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for high-voltage switching applications. This device features a 600 V collector-emitter breakdown voltage rating with a maximum collector current of 3 A and 60 W power dissipation capability in a Through Hole TO-220-3 package. The BUL213 is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while meeting modern compliance standards.

Substiute Parts

BUL213

STMicroelectronicsIn Stock: 2175BUL213 Datasheet

Current PartRFQ

FJP5027OTU

onsemiIn Stock: 32620FJP5027OTU Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the BUL213 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must support a minimum collector-emitter breakdown voltage of 600 V to ensure safe operation in the original application circuit. Higher voltage ratings provide additional design margin and are acceptable.

Current Rating: The substitute must support a minimum collector current (Ic) of 3 A to meet load requirements without thermal stress or performance degradation.

Power Dissipation: The substitute must support a minimum power rating of 60 W to handle the thermal load in the intended application.

Package Compatibility: The substitute must use the TO-220-3 Through Hole package to ensure mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Transistor Polarity: The substitute must be NPN type to maintain circuit functionality and biasing requirements.

The FJP5027OTU meets all substitution criteria with enhanced electrical specifications, including higher voltage rating (800 V), equivalent current rating (3 A), and active product status.

Parameter Comparison

Engineering Selection Recommendations

The FJP5027OTU is a direct substitute for the obsolete BUL213 transistor. Both devices are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

The FJP5027OTU offers superior voltage rating (800 V versus 600 V), providing enhanced overvoltage protection in the application circuit. The current rating remains equivalent at 3 A, ensuring compatibility with existing load specifications. Both devices operate at identical maximum junction temperatures (150°C).

The FJP5027OTU is manufactured by onsemi and maintains active product status, ensuring long-term availability and supply chain continuity. The BUL213, classified as obsolete, presents supply risk and should be replaced in new designs and production runs.

Both devices utilize identical TO-220-3 Through Hole packaging, eliminating the need for PCB redesign or heat sink modification. Thermal interface characteristics remain consistent between the two components.

Frequently Asked Questions (FAQ)

Q: Can the FJP5027OTU directly replace the BUL213 in existing circuits?

A: Yes. The FJP5027OTU maintains electrical compatibility across all critical parameters: NPN polarity, 3 A collector current rating, 600 V minimum voltage rating (FJP5027OTU rated to 800 V), and TO-220-3 package configuration. No circuit modifications are required.

Q: What is the primary advantage of substituting the FJP5027OTU for the BUL213?

A: The FJP5027OTU is an active product with guaranteed long-term availability, whereas the BUL213 is obsolete. The FJP5027OTU also provides higher voltage rating (800 V), offering additional design margin and overvoltage protection.

Q: Are there thermal management differences between these devices?

A: Both devices operate at identical maximum junction temperatures (150°C). The TO-220-3 package provides equivalent thermal interface characteristics. Heat sink mounting and thermal design remain unchanged.

Q: Do both devices meet current compliance standards?

A: Yes. Both the BUL213 and FJP5027OTU are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

Q: What is the impact of the FJP5027OTU's lower power rating (50 W versus 60 W)?

A: The FJP5027OTU's 50 W power rating remains adequate for applications designed around the BUL213's 60 W specification, provided thermal management and circuit design maintain junction temperature within the 150°C maximum operating limit. Circuit analysis should confirm thermal performance in the specific application.

Q: Are there differences in saturation voltage between these devices?

A: Yes. The FJP5027OTU exhibits higher saturation voltage (2V @ 300mA, 1.5A) compared to the BUL213 (900mV @ 200mA, 1A). This difference affects switching losses and heat dissipation. Circuit designs sensitive to saturation voltage performance should evaluate this parameter against application requirements.

Q: Is the FJP5027OTU available in the same packaging format?

A: Yes. Both devices use TO-220-3 Through Hole packaging, ensuring mechanical and thermal compatibility with existing PCB designs and heat sink assemblies.