BUL146G Equivalent & Substitute Parts

Part Overview

The BUL146G is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 6 A maximum collector current. Housed in a TO-220-3 through-hole package, this device is part of the SWITCHMODE™ series and delivers 100 W maximum power dissipation with a 14 MHz transition frequency. The BUL146G is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Substiute Parts

BUL146G
onsemiIn Stock: 1012BUL146G Datasheet
BUL146G
Current Part
MJF18004G
onsemiIn Stock: 2190MJF18004G Datasheet
MJF18004G
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BUJ105A,127
WeEn SemiconductorsIn Stock: 835BUJ105A,127 Datasheet
BUJ105A,127
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BUL138
STMicroelectronicsIn Stock: 9620BUL138 Datasheet
BUL138
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ST13007
STMicroelectronicsIn Stock: 1296ST13007 Datasheet
ST13007
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ST13007D
STMicroelectronicsIn Stock: 680301ST13007D Datasheet
ST13007D
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Key Parameters

Parameter BUL146G Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 6 A
Power - Max 100 W
Frequency - Transition 14 MHz
Package / Case TO-220-3
Mounting Type Through Hole
Operating Temperature Range -65 to 150 °C (TJ)

Substitute Part Grouping Explanation

Substitution of the BUL146G is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The collector-emitter breakdown voltage must equal or exceed 400 V to maintain circuit protection margins.

Current Rating: The maximum collector current must support the application's current demands. The BUL146G specifies 6 A; substitutes with equal or higher ratings are acceptable.

Power Dissipation: Maximum power rating must accommodate thermal requirements. The BUL146G is rated at 100 W.

Package Type: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Transistor Type: All substitutes must be NPN configuration to maintain circuit polarity and biasing relationships.

Operating Temperature: The -65°C to 150°C range must be supported by substitute devices.

The following substitute parts meet these criteria and are classified as active products with current manufacturing status.

Parameter Comparison

Parameter BUL146G MJF18004G BUJ105A,127 BUL138 ST13007 ST13007D Unit
Manufacturer onsemi onsemi WeEn Semiconductors STMicroelectronics STMicroelectronics STMicroelectronics
Transistor Type NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 400 450 400 400 400 400 V
Current - Collector (Ic) (Max) 6 5 8 5 8 8 A
Power - Max 100 35 80 80 80 80 W
Frequency - Transition 14 13 MHz
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Operating Temperature (Max) 150 150 150 150 150 150 °C (TJ)
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

ST13007D is the primary substitute for the BUL146G. This device is manufactured by STMicroelectronics with active product status and ROHS3 compliance. It provides 400 V breakdown voltage matching the original specification, 8 A collector current exceeding the 6 A requirement, and 80 W power rating. The TO-220-3 package ensures direct mechanical compatibility. Inventory availability is substantial at 680,200 pieces.

ST13007 offers identical electrical specifications to ST13007D with equivalent active status and ROHS3 compliance. This variant is suitable where ST13007D availability is constrained, with 1,218 pieces in stock.

BUJ105A,127 manufactured by WeEn Semiconductors provides 400 V breakdown voltage, 8 A collector current, and 80 W power dissipation in TO-220-3 packaging. This device carries RoHS compliance and active product status with 743 pieces available.

BUL138 manufactured by STMicroelectronics is rated for 400 V and 5 A collector current, which is below the original 6 A specification. This device is suitable only for applications where the 5 A current limit is acceptable. It provides 80 W power dissipation, ROHS3 compliance, and active status with 9,582 pieces in inventory.

MJF18004G manufactured by onsemi provides 450 V breakdown voltage, exceeding the 400 V requirement. However, the 5 A collector current rating falls below the original 6 A specification, and the 35 W power rating is significantly reduced from the 100 W original. This device is suitable only for reduced-power applications. It carries ROHS3 compliance and active status.

All substitute parts maintain the -65°C to 150°C operating temperature range and through-hole TO-220-3 mounting configuration required for direct replacement.

Frequently Asked Questions (FAQ)

Q: Can ST13007D directly replace BUL146G in existing designs?

A: Yes. ST13007D provides equal or superior electrical ratings across all critical parameters: 400 V breakdown voltage, 8 A collector current (exceeding the 6 A requirement), 80 W power dissipation, and identical TO-220-3 through-hole packaging. The device maintains the same operating temperature range and is RoHS3 compliant.

Q: What is the difference between ST13007 and ST13007D?

A: Both devices are manufactured by STMicroelectronics with identical electrical specifications: 400 V breakdown voltage, 8 A collector current, and 80 W power dissipation. Both are active products with ROHS3 compliance and TO-220-3 packaging. Selection between them depends on availability and supply chain requirements.

Q: Why is MJF18004G not recommended as a primary substitute?

A: MJF18004G has a maximum collector current of 5 A, which is below the BUL146G specification of 6 A. Additionally, the 35 W power rating is significantly lower than the original 100 W rating. This device is suitable only for applications with reduced current and power requirements.

Q: Is BUL138 a suitable substitute?

A: BUL138 is suitable only for applications where the 5 A collector current limit is acceptable. The original BUL146G is rated for 6 A, making BUL138 marginal for direct replacement. The 80 W power rating is also reduced from the original 100 W specification. BUL138 is an active product with ROHS3 compliance and TO-220-3 packaging.

Q: Can I use BUJ105A,127 as a substitute?

A: Yes. BUJ105A,127 manufactured by WeEn Semiconductors provides 400 V breakdown voltage, 8 A collector current, and 80 W power dissipation in TO-220-3 packaging. The device is RoHS compliant and carries active product status. It is electrically compatible with the BUL146G.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts use TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Q: What compliance certifications should I verify for new designs?

A: All active substitute parts carry RoHS compliance (either RoHS or ROHS3 standard). All devices are classified as REACH Unaffected and carry EAR99 export classification. Verify specific compliance requirements for your application and regional regulations.

Q: Why is the BUL146G obsolete?

A: The BUL146G is classified as obsolete by onsemi. Multiple active alternatives from established manufacturers provide equivalent or superior electrical performance, making continued production of the original device unnecessary.

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