BUJ103AX,127 Equivalent & Substitute Parts Reference

Part Overview

The BUJ103AX,127 is an NPN bipolar junction transistor (BJT) in the Transistors, Bipolar (BJT) category manufactured by WeEn Semiconductors. It features a maximum collector-emitter voltage of 400 V, maximum collector current of 4 A, and a maximum power dissipation of 26 W, supplied in a TO-220F through-hole package. The product is currently active. Alternative models are sometimes required to ensure continuity of supply, accommodate inventory management, or address end-of-life or availability issues of similar devices.

Substiute Parts

BUJ103AX,127
WeEn SemiconductorsIn Stock: 1166BUJ103AX,127 Datasheet
BUJ103AX,127
Current Part
FJPF3305H1TU
onsemiIn Stock: 1737FJPF3305H1TU Datasheet
FJPF3305H1TU
Similar
MJF18004G
onsemiIn Stock: 2190MJF18004G Datasheet
MJF18004G
Similar

Key Parameters

Parameter BUJ103AX,127
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 500mA, 5V
Power - Max 26 W
Operating Temperature (TJ) 150°C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status RoHS Compliant

Substitute Part Grouping Explanation

Substitute parts for BUJ103AX,127 are determined by matching transistor type (NPN), collector-emitter breakdown voltage, maximum collector current, saturation voltage, cutoff current, minimum DC current gain, power handling, operating temperature, mounting type, and package compatibility. Only parts with explicit matching or exceeding ratings in these parameters and equivalent package types are considered direct substitutes.

Parameter Comparison

Parameter BUJ103AX,127 FJPF3305H1TU MJF18004G
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 4 A 4 A 5 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 450 V
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A 1V @ 1A, 4A 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max) 100µA 1µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 500mA, 5V 19 @ 1A, 5V 14 @ 300mA, 5V
Power - Max 26 W 30 W 35 W
Operating Temperature (TJ) 150°C 150°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3 Full Pack
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Obsolete Active

Engineering Selection Recommendations

For substituting BUJ103AX,127, MJF18004G and FJPF3305H1TU meet the provided compliance standards (RoHS, REACH where noted) and packaging requirements. Product status should be considered: BUJ103AX,127 and MJF18004G are active, while FJPF3305H1TU is obsolete. Use substitutes with active product status for ongoing designs when possible.

Frequently Asked Questions (FAQ)

Q1: What key parameters must match when selecting substitutes for BUJ103AX,127 in the Transistors, Bipolar (BJT) category?
A1: The replacement must match or exceed collector-emitter breakdown voltage, maximum collector current, maximum power, NPN transistor type, package type (TO-220-3 Full Pack), mounting method (Through Hole), and maintain equivalent DC current gain and cutoff current values.

Q2: Does package compatibility affect substitution choices?
A2: Yes. All listed alternatives use the TO-220-3 Full Pack (or equivalent) case to ensure drop-in compatibility with existing footprints and thermal properties.

Q3: Should device product status be considered when choosing a substitute?
A3: Yes. Active parts are preferred to ensure continued availability. Obsolete status substitutes should only be used for existing designs or where inventory exists.

Q4: Are RoHS and REACH compliance covered for the substitutes?
A4: Yes. All provided substitutes explicitly indicate RoHS (and where provided, REACH) compliance. This ensures suitability in environmentally regulated applications.

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