BUH100 Equivalent & Substitute Parts

Part Overview

The BUH100 is an NPN bipolar junction transistor manufactured by onsemi, designed for high-voltage switching applications. It features a 700 V collector-emitter breakdown voltage rating and 10 A maximum collector current in a Through Hole TO-220 package. The device is rated for 100 W maximum power dissipation and operates across a temperature range of -60°C to 150°C.

The BUH100 is classified as obsolete. Locating equivalent or substitute components is necessary for new designs, repairs, or production continuity when original stock becomes unavailable or depleted.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	700	V
Current - Collector (Ic) (Max)	10	A
Power - Max	100	W
Vce Saturation (Max) @ Ib, Ic	750mV @ 1.5A, 7A	V
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V	—
Frequency - Transition	23	MHz
Operating Temperature Range	-60 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the BUH100 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Transistor polarity must remain NPN
Collector-emitter breakdown voltage must equal or exceed 700 V
Maximum collector current must equal or exceed 10 A
Maximum power dissipation must equal or exceed 100 W
Package type must be TO-220-3 (Through Hole)

Mechanical Compatibility Criteria:

Mounting type must be Through Hole
Package footprint must be TO-220-3

The BUL58D from STMicroelectronics is listed as a substitute part. However, this device exhibits reduced electrical ratings: maximum collector-emitter breakdown voltage of 450 V (versus 700 V required), maximum collector current of 8 A (versus 10 A required), and maximum power dissipation of 85 W (versus 100 W required). The BUL58D does not meet the minimum electrical specifications for direct substitution in applications requiring the full 700 V rating or 10 A current capability.

Parameter Comparison

Parameter	BUH100 (onsemi)	BUL58D (STMicroelectronics)	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	700	450	V
Current - Collector (Ic) (Max)	10	8	A
Power - Max	100	85	W
Vce Saturation (Max) @ Ib, Ic	750mV @ 1.5A, 7A	2V @ 1A, 5A	V
Current - Collector Cutoff (Max)	100	200	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V	5 @ 5A, 5V	—
Operating Temperature (Max)	150	150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Product Status Consideration: The BUH100 is classified as obsolete, while the BUL58D is active and in production. Active status ensures ongoing availability and supply chain continuity.

Compliance Consideration: The BUL58D is ROHS3 compliant, whereas the BUH100 is RoHS non-compliant. For applications subject to RoHS regulations, the BUL58D provides regulatory alignment.

Electrical Rating Limitations: The BUL58D does not satisfy the full electrical specifications of the BUH100. Applications requiring 700 V collector-emitter breakdown voltage or 10 A collector current cannot use the BUL58D as a direct substitute. The BUL58D is suitable only for applications with reduced voltage and current requirements (450 V maximum, 8 A maximum).

Inventory Availability: The BUH100 has 3,086 pieces in stock. The BUL58D has 34,090 pieces in stock, providing significantly greater availability for procurement.

Frequently Asked Questions (FAQ)

Q: Can the BUL58D replace the BUH100 in all applications?

A: No. The BUL58D has lower electrical ratings. It is suitable only for applications with maximum voltage requirements of 450 V or less and maximum current requirements of 8 A or less. Applications requiring the full 700 V or 10 A specifications of the BUH100 cannot use the BUL58D.

Q: Are both devices in the same package?

A: Yes. Both the BUH100 and BUL58D use the TO-220-3 Through Hole package, ensuring mechanical compatibility in PCB layouts and thermal management designs.

Q: What is the difference in saturation voltage between these devices?

A: The BUH100 has a maximum saturation voltage of 750 mV at 1.5 A base current and 7 A collector current. The BUL58D has a maximum saturation voltage of 2 V at 1 A base current and 5 A collector current. The BUL58D exhibits higher saturation voltage, resulting in greater power dissipation during switching.

Q: Does the BUL58D meet modern compliance standards?

A: Yes. The BUL58D is ROHS3 compliant and REACH unaffected. The BUH100 is RoHS non-compliant. For new designs or applications subject to RoHS regulations, the BUL58D provides regulatory compliance.

Q: What is the current gain difference?

A: The BUH100 has a minimum DC current gain (hFE) of 10 at 5 A collector current and 5 V collector-emitter voltage. The BUL58D has a minimum DC current gain of 5 at the same conditions. The BUH100 provides twice the current gain, resulting in lower base drive requirements.

Q: Is the BUL58D suitable for high-voltage switching applications?

A: The BUL58D is rated for 450 V maximum collector-emitter breakdown voltage. It is suitable for switching applications with voltage requirements up to 450 V. Applications requiring 700 V operation require a device with higher voltage rating.

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