BUF634P Equivalent & Substitute Parts

Part Overview

The BUF634P is a buffer amplifier integrated circuit manufactured by Texas Instruments, designed for high-speed signal conditioning applications. This device is classified as obsolete, which necessitates identification of equivalent substitute components for ongoing design requirements and production continuity. The BUF634P operates as a single-circuit buffer amplifier in an 8-DIP through-hole package, delivering 250 mA output current with a 2000 V/µs slew rate and 180 MHz bandwidth across a wide supply voltage range of 4.5 V to 36 V.

Substiute Parts

BUF634P
Texas InstrumentsIn Stock: 15171BUF634P Datasheet
BUF634P
Current Part
BUF634AIDR
Texas InstrumentsIn Stock: 37653BUF634AIDR Datasheet
BUF634AIDR
MFR Recommended

Key Parameters

Parameter Value Unit
Amplifier Type Buffer
Number of Circuits 1
Slew Rate 2000 V/µs
-3dB Bandwidth 180 MHz
Current - Input Bias 5 µA
Voltage - Input Offset 30 mV
Current - Supply 15 mA
Current - Output / Channel 250 mA
Voltage - Supply Span (Min) 4.5 V
Voltage - Supply Span (Max) 36 V
Operating Temperature -40 to 85 °C
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BUF634P is determined by equivalence across the following critical parameters:

Functional Equivalence Criteria:

  • Single-circuit amplifier configuration
  • Output current capability of 250 mA per channel
  • Supply voltage range compatibility (4.5 V to 36 V minimum and maximum)
  • Operating temperature range coverage

Performance Equivalence Criteria:

  • Slew rate and bandwidth characteristics sufficient for the application
  • Input bias current and input offset voltage within acceptable tolerances
  • Supply current consumption

Compliance and Manufacturing Status:

  • RoHS3 compliance maintained
  • Active product status preferred for long-term availability

The BUF634AIDR qualifies as a manufacturer-recommended substitute based on these parameters, despite differences in package type and certain performance specifications.

Parameter Comparison

Parameter BUF634P (Main Part) BUF634AIDR (Substitute) Unit
Manufacturer Texas Instruments Texas Instruments
Base Product Number BUF634 BUF634
Amplifier Type Buffer General Purpose
Number of Circuits 1 1
Output Type Push-Pull
Slew Rate 2000 3750 V/µs
-3dB Bandwidth 180 210 MHz
Current - Input Bias 5 30 nA
Voltage - Input Offset 30 36 mV
Current - Supply 15 8.5 mA
Current - Output / Channel 250 250 mA
Voltage - Supply Span (Min) 4.5 4.5 V
Voltage - Supply Span (Max) 36 36 V
Operating Temperature -40 to 85 -40 to 125 °C
Mounting Type Through Hole Surface Mount
Package / Case 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm)
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 2 (1 Year)

Engineering Selection Recommendations

Substitution Feasibility:

The BUF634AIDR is the manufacturer-recommended substitute for the BUF634P. Both devices share the same base product number (BUF634) and are manufactured by Texas Instruments. The substitute maintains electrical compatibility across critical parameters: identical output current (250 mA), matching supply voltage range (4.5 V to 36 V), and RoHS3 compliance.

Key Considerations:

  1. Product Status: The BUF634P is obsolete, while the BUF634AIDR is active. The active status of the substitute ensures continued availability and manufacturing support.

  2. Package Transition: The primary difference is the package format. The BUF634P uses through-hole 8-DIP packaging, while the BUF634AIDR uses surface-mount 8-SOIC packaging. This transition requires PCB redesign and assembly process modification.

  3. Performance Enhancement: The BUF634AIDR provides superior performance specifications: higher slew rate (3750 V/µs versus 2000 V/µs), increased bandwidth (210 MHz versus 180 MHz), and lower supply current (8.5 mA versus 15 mA).

  4. Operating Temperature Range: The BUF634AIDR extends the maximum operating temperature to 125°C, compared to 85°C for the BUF634P, providing broader thermal operating capability.

  5. Compliance Status: Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment.

Frequently Asked Questions (FAQ)

Q: Can the BUF634AIDR directly replace the BUF634P without circuit modifications?

A: Electrical substitution is feasible due to matching output current, supply voltage range, and functional characteristics. However, package format differs (8-SOIC surface-mount versus 8-DIP through-hole), requiring PCB layout and assembly process changes.

Q: What are the performance differences between these parts?

A: The BUF634AIDR provides enhanced performance: slew rate increases from 2000 V/µs to 3750 V/µs, bandwidth increases from 180 MHz to 210 MHz, and supply current decreases from 15 mA to 8.5 mA. Operating temperature range extends from -40°C to 125°C (versus -40°C to 85°C).

Q: Are there any compliance or certification differences?

A: Both devices maintain ROHS3 compliance and REACH unaffected status. The BUF634AIDR has a higher moisture sensitivity level (MSL 2, 1 Year) compared to the BUF634P (MSL 1, Unlimited), requiring different storage and handling protocols.

Q: Why is the BUF634P obsolete?

A: The BUF634P is obsolete due to product lifecycle management. The BUF634AIDR represents the current active product offering from Texas Instruments for this functional category.

Q: What is the impact of switching from through-hole to surface-mount packaging?

A: Surface-mount packaging (8-SOIC) requires automated assembly equipment and different PCB design considerations compared to through-hole (8-DIP). This transition affects manufacturing processes, tooling, and board layout but provides improved space efficiency and performance characteristics.

Q: Are input bias current and input offset voltage differences significant?

A: The BUF634AIDR shows higher input bias current (30 nA versus 5 µA) and slightly higher input offset voltage (36 mV versus 30 mV). These differences are within typical operational tolerances for buffer amplifier applications but should be evaluated for precision signal conditioning circuits.

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