BTS113ANKSA1 Equivalent & Substitute Parts

Part Overview

The BTS113ANKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 11.5A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and is part of the TEMPFET® series. The BTS113ANKSA1 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating modern component availability and compliance requirements.

Substiute Parts

BTS113ANKSA1

Infineon TechnologiesIn Stock: 772BTS113ANKSA1 Datasheet

Current PartRFQ

IRFZ24PBF

Vishay SiliconixIn Stock: 1524IRFZ24PBF Datasheet

MFR RecommendedRFQ

MTP3055VL

onsemiIn Stock: 15395MTP3055VL Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BTS113ANKSA1 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• FET Type: Must be N-Channel MOSFET
• Mounting Type: Must be Through Hole
• Package: Must be TO-220-3 or TO-220AB compatible
• Continuous Drain Current (Id): Must meet or exceed 11.5A at 25°C
• Power Dissipation: Must support thermal requirements of the application

Acceptable Variation Parameters:

• Rds On (Max): Lower values are acceptable (improved performance)
• Operating Temperature Range: Extended ranges are acceptable
• Gate Charge (Qg): Variations acceptable if within switching performance envelope
• Input Capacitance (Ciss): Minor variations acceptable

The two substitute parts identified—IRFZ24PBF and MTP3055VL—satisfy all critical matching parameters while offering improved electrical characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

IRFZ24PBF (Vishay Siliconix) is suitable for applications requiring maximum performance headroom. This part exceeds the BTS113ANKSA1 specifications with 17A continuous drain current (versus 11.5A), 60W power dissipation (versus 40W), and lower on-resistance of 100mOhm. The IRFZ24PBF is ROHS3 compliant and maintains active product status, ensuring long-term availability. The extended operating temperature range to 175°C provides additional thermal margin. This substitute is recommended for new designs or applications where improved thermal performance is beneficial.

MTP3055VL (onsemi) provides a closer electrical match to the BTS113ANKSA1 with 12A continuous drain current and 48W power dissipation, representing a minimal performance increase. The on-resistance of 180mOhm is comparable to the original part. The MTP3055VL is ROHS3 compliant, maintains active product status, and offers extended operating temperature range to 175°C. This substitute is recommended for direct replacement applications where electrical characteristics must remain closely aligned with the original design.

Both substitutes maintain identical voltage ratings (60V Vdss), package configuration (TO-220-3), and through-hole mounting type. Selection between IRFZ24PBF and MTP3055VL depends on thermal design requirements and performance margin preferences.

Frequently Asked Questions (FAQ)

Q: Can IRFZ24PBF and MTP3055VL be used interchangeably with BTS113ANKSA1?

A: Both parts are electrically compatible substitutes. IRFZ24PBF offers higher current and power ratings, while MTP3055VL provides closer electrical matching. Interchangeability depends on circuit design margins and thermal management. Both fit the TO-220-3 package without mechanical modification.

Q: What is the primary reason for substituting BTS113ANKSA1?

A: The BTS113ANKSA1 is classified as obsolete. Substitute parts ensure design continuity and production support. Both recommended substitutes maintain active product status with established supply chains.

Q: Are there thermal considerations when substituting these parts?

A: The BTS113ANKSA1 operates to 150°C maximum junction temperature. Both substitutes extend this to 175°C, providing additional thermal margin. Power dissipation ratings are higher in both substitutes (60W for IRFZ24PBF, 48W for MTP3055VL versus 40W original), allowing operation in higher-power applications without thermal stress.

Q: Do the substitute parts require circuit modifications?

A: No circuit modifications are required. Both substitutes maintain identical pin configuration (TO-220-3), gate threshold voltage compatibility, and voltage ratings. Gate drive voltage requirements differ slightly but remain within standard logic-level MOSFET operating ranges.

Q: What is the compliance status of substitute parts?

A: The BTS113ANKSA1 is RoHS non-compliant. Both IRFZ24PBF and MTP3055VL are ROHS3 compliant, meeting current environmental regulations. Both are REACH unaffected and classified as EAR99 for export control purposes.

Q: How do on-resistance values affect substitution?

A: Lower on-resistance reduces power dissipation and heat generation. IRFZ24PBF (100mOhm) provides superior performance compared to BTS113ANKSA1 (170mOhm). MTP3055VL (180mOhm) is nearly equivalent. Lower on-resistance is beneficial in all applications and does not create compatibility issues.

Q: Are gate charge characteristics important for substitution?

A: Gate charge affects switching speed and driver requirements. IRFZ24PBF specifies 25nC at 10V, while MTP3055VL specifies 10nC at 5V. Both values are acceptable for standard gate driver circuits. Verify gate driver current capability if switching frequency exceeds 100kHz.