BSZ088N03LSGATMA1 Equivalent & Substitute Parts

Part Overview

The BSZ088N03LSGATMA1 is an N-Channel 30V MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is rated for 12A continuous drain current at 25°C (Ta) and 40A at case temperature (Tc), with a maximum on-resistance of 8.8mOhm at 20A and 10V gate-source voltage. The part is housed in an 8-PowerTDFN surface mount package (PG-TSDSON-8).

The BSZ088N03LSGATMA1 carries a product status of "Not For New Designs," indicating that Infineon has discontinued active development for this component. Organizations requiring this MOSFET for new applications or seeking to maintain existing designs must evaluate qualified substitute parts that meet equivalent electrical and mechanical specifications. Substitute selection is constrained by matching drain-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and package compatibility.

Substiute Parts

BSZ088N03LSGATMA1
Infineon TechnologiesIn Stock: 8817BSZ088N03LSGATMA1 Datasheet
BSZ088N03LSGATMA1
Current Part
AON7400A
Alpha & Omega Semiconductor Inc.In Stock: 250265AON7400A Datasheet
AON7400A
MFR Recommended
CSD17308Q3
Texas InstrumentsIn Stock: 27487CSD17308Q3 Datasheet
CSD17308Q3
MFR Recommended
CSD17579Q3A
Texas InstrumentsIn Stock: 25410CSD17579Q3A Datasheet
CSD17579Q3A
MFR Recommended
CSD17579Q3AT
Texas InstrumentsIn Stock: 1431CSD17579Q3AT Datasheet
CSD17579Q3AT
MFR Recommended
NTTFS4C13NTAG
onsemiIn Stock: 50493NTTFS4C13NTAG Datasheet
NTTFS4C13NTAG
MFR Recommended
RQ3E100BNTB
Rohm SemiconductorIn Stock: 121946RQ3E100BNTB Datasheet
RQ3E100BNTB
MFR Recommended
RQ3E120BNTB
Rohm SemiconductorIn Stock: 3903RQ3E120BNTB Datasheet
RQ3E120BNTB
MFR Recommended
STL11N3LLH6
STMicroelectronicsIn Stock: 20680STL11N3LLH6 Datasheet
STL11N3LLH6
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 12 A
Continuous Drain Current @ Case Temp (Tc) 40 A
On-Resistance (Rds On Max) @ 20A, 10V 8.8 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.2 V
Gate Charge (Qg) @ 10V 21 nC
Input Capacitance (Ciss) @ 15V 1700 pF
Power Dissipation (Ta) 2.1 W
Power Dissipation (Tc) 35 W
Operating Temperature Range -55 to 150 °C
Package Type 8-PowerTDFN (PG-TSDSON-8) -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute parts for the BSZ088N03LSGATMA1 are qualified based on the following electrical and mechanical criteria:

Primary Matching Criteria:

  • Drain-Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current (Id @ Ta): 12A or greater
  • On-Resistance (Rds On): Comparable or lower values at specified gate-source voltage
  • Gate Charge (Qg): Lower or equivalent values preferred for switching performance
  • Operating Temperature Range: -55°C to 150°C minimum
  • Surface Mount Package: 8-pin power package configurations
  • RoHS3 Compliance and MSL Level 1

Substitution Logic: Substitute parts are grouped into two categories based on product status and availability:

  1. Active Status Substitutes (Recommended for new designs): CSD17308Q3, CSD17579Q3A, CSD17579Q3AT, STL11N3LLH6, NTTFS4C13NTAG, RQ3E100BNTB, RQ3E120BNTB
  2. Not For New Designs (Legacy alternatives): AON7400A

All substitute parts maintain 30V Vdss rating and support continuous drain currents of 7.2A or greater, ensuring functional compatibility in applications originally designed for the BSZ088N03LSGATMA1. Package variations (8-DFN-EP, 8-VSON, 8-WDFN, 8-HSMT, PowerFlat) are mechanically compatible with standard 8-pin power package footprints.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ Ta (A) Id @ Tc (A) Rds On Max (mOhm) Qg @ 10V (nC) Ciss @ 15V (pF) Product Status Package
BSZ088N03LSGATMA1 Infineon 30 12 40 8.8 @ 20A, 10V 21 1700 Not For New Designs 8-PowerTDFN
AON7400A Alpha & Omega 30 15 40 7.5 @ 20A, 10V 24 1380 Not For New Designs 8-DFN-EP
CSD17308Q3 Texas Instruments 30 14 44 10.3 @ 10A, 8V 5.1 700 Active 8-VSON-CLIP
CSD17579Q3A Texas Instruments 30 20 - 10.2 @ 8A, 10V 15 998 Active 8-VSONP
CSD17579Q3AT Texas Instruments 30 20 - 10.2 @ 8A, 10V 15 998 Active 8-VSONP
NTTFS4C13NTAG onsemi 30 7.2 - 9.4 @ 30A, 10V 7.8 770 Active 8-WDFN
RQ3E100BNTB Rohm 30 10 - 10.4 @ 10A, 10V 22 1100 Active 8-HSMT
RQ3E120BNTB Rohm 30 12 - 9.3 @ 12A, 10V 29 1500 Active 8-HSMT
STL11N3LLH6 STMicroelectronics 30 11 - 7.5 @ 5.5A, 10V 17 1690 Active PowerFlat

Engineering Selection Recommendations

For New Designs: Select substitute parts with "Active" product status. CSD17579Q3A and CSD17579Q3AT (Texas Instruments NexFET™ series) provide the highest continuous drain current rating (20A @ Ta) and lowest gate charge (15nC @ 10V), resulting in improved switching efficiency and thermal performance compared to the original BSZ088N03LSGATMA1. Both parts are available in high inventory quantities and carry full RoHS3 compliance with MSL Level 1 rating.

CSD17308Q3 offers an alternative with lower input capacitance (700pF) and reduced gate charge (5.1nC @ 4.5V), suitable for applications requiring faster switching transitions. This part maintains Active product status and is available in 27,431 units.

For Equivalent Current Ratings: RQ3E120BNTB (Rohm Semiconductor) matches the original 12A continuous drain current specification at 25°C and provides comparable on-resistance (9.3mOhm @ 12A, 10V). This part is Active and available in 3,872 units.

For Legacy System Maintenance: AON7400A (Alpha & Omega Semiconductor) provides a direct functional substitute with improved on-resistance (7.5mOhm vs. 8.8mOhm) and higher continuous drain current (15A vs. 12A). However, this part carries "Not For New Designs" status and should be used only for maintaining existing production runs or legacy systems.

Compliance Verification: All recommended substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL Level 1 moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace BSZ088N03LSGATMA1 with any of the listed substitutes without PCB modification?

A: Package compatibility depends on footprint design. The original BSZ088N03LSGATMA1 uses 8-PowerTDFN (PG-TSDSON-8) packaging. Substitutes use different 8-pin power packages (8-DFN-EP, 8-VSON, 8-WDFN, 8-HSMT, PowerFlat). While all are 8-pin surface mount configurations with similar pin pitch, physical dimensions and pad layouts differ. PCB footprint verification is required before substitution. Consult package datasheets for exact dimensions and pad spacing.

Q2: Which substitute offers the best performance improvement over the original BSZ088N03LSGATMA1?

A: CSD17579Q3A and CSD17579Q3AT deliver the highest performance gains: 20A continuous drain current (vs. 12A original), 40% lower gate charge (15nC vs. 21nC), and 41% lower input capacitance (998pF vs. 1700pF). These improvements reduce switching losses and enable faster circuit operation. Both parts are Active status and widely available.

Q3: What is the difference between CSD17579Q3A and CSD17579Q3AT?

A: Both parts are electrically identical N-Channel 30V MOSFETs with 20A continuous drain current and 10.2mOhm on-resistance. The difference is packaging: CSD17579Q3A is supplied in Cut Tape (CT) & Digi-Reel® format, while CSD17579Q3AT is supplied in Tape & Reel (TR) format. Select based on your procurement and assembly requirements. CSD17579Q3A has higher inventory (25,300 units) compared to CSD17579Q3AT (1,350 units).

Q4: Is RQ3E120BNTB a direct equivalent to BSZ088N03LSGATMA1?

A: RQ3E120BNTB matches the original 12A continuous drain current specification and maintains 30V Vdss rating. On-resistance is 9.3mOhm @ 12A, 10V (vs. 8.8mOhm @ 20A, 10V for the original). Gate charge is higher (29nC vs. 21nC). This part is suitable for applications requiring equivalent current handling with Active product status and good availability (3,872 units).

Q5: Why does NTTFS4C13NTAG have lower continuous drain current (7.2A) than the original?

A: NTTFS4C13NTAG is rated for 7.2A continuous drain current at 25°C, which is below the original 12A specification. This part is suitable only for applications with lower current requirements or as a secondary source for lower-power variants. Do not use this part in designs requiring the full 12A rating.

Q6: What does "Not For New Designs" status mean for BSZ088N03LSGATMA1 and AON7400A?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and support for these parts. They may still be available from inventory but are not recommended for new product development. Use Active status parts (CSD17579Q3A, CSD17308Q3, RQ3E120BNTB, STL11N3LLH6) for new designs to ensure long-term supply chain stability and manufacturer support.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification and REACH unaffected status, matching the original BSZ088N03LSGATMA1. All parts have MSL Level 1 (Unlimited) moisture sensitivity rating, requiring no special storage or handling beyond standard ESD precautions.

Q8: Which substitute has the lowest on-resistance?

A: AON7400A and STL11N3LLH6 both offer 7.5mOhm on-resistance, which is lower than the original 8.8mOhm. However, on-resistance values are measured at different current and voltage conditions (AON7400A @ 20A, 10V; STL11N3LLH6 @ 5.5A, 10V), so direct comparison requires normalized analysis based on your specific operating point.

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