BSZ0804LSATMA1 Equivalent & Substitute Parts

Part Overview

The BSZ0804LSATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with continuous drain current of 11A at Ta and 40A at Tc. This device is part of the OptiMOS™ 5 series and is housed in an 8-PowerTDFN surface mount package. The part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current @ Ta	11	A
Continuous Drain Current @ Tc	40	A
Rds On (Max) @ 20A, 10V	9.6	mOhm
Gate Charge (Qg) @ 4.5V	15	nC
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BSZ0804LSATMA1 is based on electrical and mechanical compatibility within the OptiMOS™ 5 series. The primary substitute, ISZ0804NLSATMA1, maintains the following critical parameters:

Identical drain-to-source voltage rating (100V)
Identical continuous drain current at Ta (11A)
Identical gate-source voltage range (±20V)
Identical operating temperature range (-55°C to 150°C)
Identical package type (8-PowerTDFN)
Identical RoHS3 compliance and MSL rating

The ISZ0804NLSATMA1 differs in continuous drain current at Tc (58A versus 40A), gate charge specification (24 nC @ 10V versus 15 nC @ 4.5V), and on-state resistance (11.5 mOhm versus 9.6 mOhm). These differences represent performance enhancements in the substitute part while maintaining electrical compatibility for applications designed around the BSZ0804LSATMA1 specifications.

Parameter Comparison

Parameter	BSZ0804LSATMA1	ISZ0804NLSATMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	-
Series	OptiMOS™ 5	OptiMOS™ 5	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current @ Ta	11	11	A
Continuous Drain Current @ Tc	40	58	A
Rds On (Max) @ 20A, 10V	9.6	11.5	mOhm
Vgs(th) (Max) @ Id	2.3 @ 36µA	2.3 @ 28µA	V @ µA
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) @ 50V	2100	1600	pF
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	-
Package / Case	8-PowerTDFN	8-PowerTDFN	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	1 (Unlimited)	-
REACH Status	REACH Unaffected	REACH Unaffected	-
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

The ISZ0804NLSATMA1 is the direct substitute for the obsolete BSZ0804LSATMA1. Both devices are manufactured by Infineon Technologies within the OptiMOS™ 5 series and share identical voltage ratings, temperature ranges, and package specifications. The substitute part maintains ROHS3 compliance and REACH unaffected status, meeting regulatory requirements equivalent to the original part.

The ISZ0804NLSATMA1 is currently in active production status, ensuring availability for new designs and production continuity. The substitute part demonstrates improved thermal performance at Tc (58A versus 40A) and reduced input capacitance (1600 pF versus 2100 pF), providing enhanced performance characteristics while maintaining backward compatibility with applications designed for the BSZ0804LSATMA1.

Selection of the ISZ0804NLSATMA1 is appropriate for all applications previously utilizing the BSZ0804LSATMA1, with the understanding that the substitute part offers superior performance metrics within the same electrical and mechanical envelope.

Frequently Asked Questions (FAQ)

Q: Can the ISZ0804NLSATMA1 directly replace the BSZ0804LSATMA1 in existing designs?

A: Yes. Both parts share identical voltage ratings (100V Vdss), continuous drain current at Ta (11A), gate-source voltage range (±20V), operating temperature range (-55°C to 150°C), and 8-PowerTDFN package specifications. The substitute part is electrically and mechanically compatible with applications designed for the original part.

Q: What are the key differences between these two parts?

A: The ISZ0804NLSATMA1 provides higher continuous drain current at Tc (58A versus 40A), lower input capacitance (1600 pF versus 2100 pF), and slightly higher on-state resistance (11.5 mOhm versus 9.6 mOhm). The substitute part is in active production, whereas the original part is obsolete.

Q: Are there packaging differences between the BSZ0804LSATMA1 and ISZ0804NLSATMA1?

A: Both parts use the 8-PowerTDFN package type. The BSZ0804LSATMA1 is supplied in Cut Tape (CT) & Digi-Reel® packaging, while the ISZ0804NLSATMA1 is supplied in Tape & Reel (TR) packaging. The physical package dimensions and pin configurations are identical.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the BSZ0804LSATMA1 and ISZ0804NLSATMA1 are ROHS3 compliant, REACH unaffected, and carry MSL rating 1 (Unlimited). Both parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Why is the BSZ0804LSATMA1 marked as obsolete?

A: The BSZ0804LSATMA1 has been discontinued by Infineon Technologies. The ISZ0804NLSATMA1 serves as the active replacement within the OptiMOS™ 5 series, offering equivalent functionality with enhanced performance characteristics.

Q: What is the gate charge difference between these parts, and does it affect circuit design?

A: The BSZ0804LSATMA1 specifies 15 nC gate charge at 4.5V, while the ISZ0804NLSATMA1 specifies 24 nC at 10V. These measurements are taken at different gate-source voltages and represent different operating conditions. Circuit designs must account for the specific gate charge values at their respective drive voltages.

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