BSZ0803LSATMA1 Equivalent & Substitute Parts

Part Overview

The BSZ0803LSATMA1 is an N-Channel 100V MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ 5 series. This device is rated for 9A continuous drain current (Ta) and 40A (Tc) with a maximum drain-to-source voltage of 100V. The component is housed in an 8-PowerTDFN surface mount package and is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and maintenance applications.

Substiute Parts

BSZ0803LSATMA1

Infineon TechnologiesIn Stock: 1152BSZ0803LSATMA1 Datasheet

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ISZ0804NLSATMA1

Infineon TechnologiesIn Stock: 7825ISZ0804NLSATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the BSZ0803LSATMA1 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Substitution Parameters:

• Drain to Source Voltage (Vdss): Must equal 100V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Package / Case: Must be 8-PowerTDFN
• Mounting Type: Must be Surface Mount
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Series: OptiMOS™ 5 family preferred for consistency

Allowable Variation Parameters:

• Current - Continuous Drain (Id): Substitute must meet or exceed 9A (Ta) and 40A (Tc)
• Rds On (Max): Substitute must equal or be lower (better performance)
• Gate Charge (Qg): Substitute may vary within the same series
• Input Capacitance (Ciss): Substitute may vary within the same series
• Power Dissipation: Substitute must support thermal requirements

The ISZ0804NLSATMA1 qualifies as a direct substitute based on matching all critical parameters while providing improved electrical performance in continuous drain current and reduced on-resistance.

Parameter Comparison

Engineering Selection Recommendations

BSZ0803LSATMA1 (Main Part):

The BSZ0803LSATMA1 is classified as obsolete. This part carries ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating. The component is suitable for applications requiring 100V drain-to-source voltage with 9A continuous drain current at ambient temperature. Procurement of this part is subject to availability constraints due to its obsolete status.

ISZ0804NLSATMA1 (Substitute Part):

The ISZ0804NLSATMA1 is an active product from Infineon Technologies within the same OptiMOS™ 5 series. This substitute maintains identical voltage ratings (100V Vdss) and package configuration (8-PowerTDFN) while providing enhanced electrical performance. The ISZ0804NLSATMA1 delivers 11A continuous drain current (Ta) and 58A (Tc), exceeding the BSZ0803LSATMA1 specifications. On-resistance is reduced to 11.5 mOhm from 14.6 mOhm, resulting in lower power dissipation and improved thermal performance. The substitute maintains ROHS3 compliance and MSL Level 1 rating. Active product status ensures long-term availability and supply chain continuity.

Compliance and Certification Alignment:

Both parts maintain identical RoHS3 compliance status and MSL Level 1 moisture sensitivity classification. Both components operate across the full temperature range of -55°C to 150°C (TJ). Regulatory classifications (ECCN: EAR99, HTSUS: 8541.29.0095) are consistent between the main part and substitute.

Frequently Asked Questions (FAQ)

Q: Can the ISZ0804NLSATMA1 directly replace the BSZ0803LSATMA1 in existing designs?

A: Yes. The ISZ0804NLSATMA1 maintains identical voltage ratings (100V Vdss), package configuration (8-PowerTDFN), and mounting type (Surface Mount). Both components are N-Channel MOSFETs from the OptiMOS™ 5 series with matching operating temperature ranges (-55°C to 150°C TJ). The substitute provides equal or superior electrical performance across all critical parameters.

Q: What are the key electrical differences between these parts?

A: The ISZ0804NLSATMA1 provides higher continuous drain current ratings: 11A (Ta) versus 9A (Ta), and 58A (Tc) versus 40A (Tc). On-resistance is reduced to 11.5 mOhm from 14.6 mOhm at 20A, 10V. Gate charge increases from 15 nC to 24 nC, and input capacitance increases from 1300 pF to 1600 pF. Maximum power dissipation at Tc increases from 52W to 60W.

Q: Are there packaging differences between the BSZ0803LSATMA1 and ISZ0804NLSATMA1?

A: Both parts use the 8-PowerTDFN package configuration. The main part is supplied in Cut Tape (CT) & Digi-Reel® packaging, while the substitute is supplied in Tape & Reel (TR) format. The physical package dimensions and pin configuration remain identical, ensuring PCB layout compatibility.

Q: What is the significance of the product status difference?

A: The BSZ0803LSATMA1 is classified as obsolete, indicating discontinued manufacturing and limited availability. The ISZ0804NLSATMA1 maintains active product status, ensuring ongoing manufacturing, consistent supply chain availability, and long-term technical support from Infineon Technologies.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the BSZ0803LSATMA1 and ISZ0804NLSATMA1 are ROHS3 compliant and REACH unaffected. Both carry MSL Level 1 (Unlimited) moisture sensitivity classification. Regulatory classifications (ECCN: EAR99, HTSUS: 8541.29.0095) are identical.

Q: Will the higher gate charge of the ISZ0804NLSATMA1 affect circuit performance?

A: Gate charge increases from 15 nC to 24 nC. This parameter affects gate drive circuit design and switching speed. Circuits designed for the BSZ0803LSATMA1 must be evaluated to confirm gate drive capability can accommodate the increased charge requirement of the substitute part.

Q: Are there thermal performance considerations when substituting these parts?

A: The ISZ0804NLSATMA1 provides improved thermal performance through reduced on-resistance (11.5 mOhm versus 14.6 mOhm), resulting in lower power dissipation at equivalent current levels. Maximum power dissipation at Tc increases from 52W to 60W, providing additional thermal headroom. Both parts operate across identical temperature ranges (-55°C to 150°C TJ).